Preliminary Technical Information TrenchT2TM Power MOSFET IXTA300N04T2-7 VDSS ID25 = 40V = 300A 2.5m RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 40 V VDGR TJ = 25C to 175C, RGS = 1M 40 V VGSM Transient 20 V ID25 TC = 25C 300 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25C, pulse width limited by TJM 900 A IA TC = 25C 100 A EAS TC = 25C 600 mJ PD TC = 25C 480 W -55 ... +175 C TJM 175 C Tstg -55 ... +175 C 300 260 C C 3 g TJ TL Tsold 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Weight 1 7 (TAB) Pins: 1 - Gate 2, 3 - Source 5,6,7 - Source TAB (8) - Drain Features z International standard package 175C Operating Temperature z Avalanche rated z High current handling capability z Low RDS(on) z Advantages z z z Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 40 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) Easy to mount Space savings High power density V Applications 4.0 V 200 nA * Synchronous Buck Converters * High Current Switching Power 5 A TJ = 150C VGS = 10V, ID = 50A, Notes 1, 2 (c) 2008 IXYS CORPORATION, All rights reserved 150 A 2.5 m Supplies * Battery Powered Electric Motors * Resonant-mode power supplies * Electronics Ballast Application * Class D Audio Amplifiers DS100072(11/08) IXTA300N04T2-7 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 55 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 100A RG = 2 (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd TO-263 (7-lead) (IXTA..7) Outline 94 S 10.7 nF 1630 pF 263 pF 22 ns 17 ns 32 ns 13 ns 145 nC 44 nC 36 nC 0.31 C/W RthJC Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 300 A ISM Repetitive, Pulse width limited by TJM 1000 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IF = 150A, VGS = 0V IRM QRM -di/dt = 100A/s VR = 20V 53 ns 1.8 A 47.7 nC Notes: 1. Pulse test, t 300s; duty cycle, d 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA300N04T2-7 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 300 350 VGS = 15V 10V 9V 8V 275 250 225 VGS = 15V 10V 9V 8V 300 250 ID - Amperes ID - Amperes 200 175 150 7V 125 100 6V 7V 200 150 6V 100 75 50 50 5V 25 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.7 0.4 0.8 Fig. 3. Output Characteristics @ 150C 1.9 VGS = 10V 1.7 200 7V 175 150 6V 125 100 75 1.6 I D = 300A 1.5 I D = 150A 1.4 1.3 1.2 1.1 1.0 0.9 50 5V 0.8 25 0.7 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 VDS - Volts 180 VGS = 10V 75 100 125 150 175 External Lead Current Limit 160 15V - - - - 1.9 140 TJ = 175C 1.8 120 1.7 ID - Amperes RDS(on) - Normalized 50 Fig. 6. Drain Current vs. Case Temperature 2.2 2.0 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 150A Value vs. Drain Current 2.1 2.4 1.8 RDS(on) - Normalized ID - Amperes 225 2.0 2.0 VGS = 15V 10V 9V 8V 250 1.6 Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature 300 275 1.2 VDS - Volts VDS - Volts 1.6 1.5 1.4 1.3 100 80 60 1.2 TJ = 25C 1.1 40 1.0 20 0.9 0.8 0 0 50 100 150 200 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 200 IXTA300N04T2-7 Fig. 8. Transconductance 180 160 160 140 140 120 120 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 100 TJ = 150C 25C - 40C 80 60 TJ = - 40C 25C 150C 100 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 VGS - Volts 80 100 120 140 160 180 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 320 10 VDS = 20V 9 280 I D = 150A 8 240 I G = 10mA 200 6 VGS - Volts IS - Amperes 7 160 120 5 4 TJ = 150C 3 80 2 TJ = 25C 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 VSD - Volts 40 60 80 100 120 140 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 RDS(on) Limit 25s Ciss 100s 10,000 I D - Amperes Capacitance - PicoFarads f = 1 MHz Coss 1,000 100 External Lead Current Limit 1ms 10 100 0 5 10 15 20 25 10ms 100ms TJ = 175C TC = 25C Single Pulse Crss 30 35 40 VDS - Volts DC 1 1 10 100 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_300N04T2(V6)11-10-08-A IXTA300N04T2-7 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 40 30 28 35 VGS = 10V 24 I D = 200A 22 20 I 18 D = 100A 14 VDS = 20V 30 25 20 15 16 VGS = 10V TJ = 125C VDS = 20V 26 t r - Nanoseconds t r - Nanoseconds RG = 2 RG = 2 TJ = 25C 10 25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 TJ - Degrees Centigrade 120 td(on) - - - - TJ = 125C, VGS = 10V 45 40 35 20 t f - Nanoseconds t r - Nanoseconds I D = 200A, 100A 25 0 6 8 40 tf 10 12 14 td(off) - - - - 35 VDS = 20V I D = 100A 35 20 15 25 10 20 25 16 35 45 95 105 115 15 125 20 40 35 30 TJ = 25C 12 25 8 140 160 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 180 20 200 t f - Nanoseconds TJ = 125C 24 td(off) - - - - 200 TJ = 125C, VGS = 10V 200 45 120 85 220 tf 225 55 50 28 100 75 180 VDS = 20V 175 160 I D = 100A, 200A 150 140 125 120 100 100 75 80 50 60 25 40 0 20 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds VDS = 20V 80 65 250 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 2, VGS = 10V 60 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 60 tf 40 30 I D = 200A TJ - Degrees Centigrade 40 16 40 25 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 32 45 30 RG - Ohms 36 50 RG = 2, VGS = 10V 5 15 4 200 t d(off) - Nanoseconds 55 t d(on) - Nanoseconds 80 2 180 55 65 VDS = 20V 60 160 45 75 tr 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 100 120 ID - Amperes IXTA300N04T2-7 Fig. 19. Maximum Transient Thermal Impedance 1.000 Z (th )J C - C / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_300N04T2(V6)11-10-08-A