DATA SH EET
Product specification
Supersedes data of 2003 Nov 26 2004 May 19
INTEGRATED CIRCUITS
74HC2G66; 74HCT2G66
Bilateral switches
2004 May 19 2
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
FEATURES
•Wide supply voltage range from 2.0 V to 9.0 V
•Very low ON-resistance:
–41Ω (typical) at VCC = 4.5 V
–30Ω (typical) at VCC = 6.0 V
–21Ω (typical) at VCC = 9.0 V.
•High noise immunity
•Low power dissipation
•±25 mA switch current
•SOT505-2 package
•ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
•Specified from −40 °C to +85 °C and
−40 °C to +125 °C.
DESCRIPTION
The 74HC2G66/74HCT2G66 is a high-speed Si-gate
CMOS device.
The 74HC2G66/74HCT2G66 provides a dual analog
switch. Each switch has two pins (nY and nZ) for input or
output and an active HIGH enable input (pin E). When
pin E is LOW, the belonging analog switch is turned off.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25°C; tr=t
f= 6.0 ns; Vos is the output voltage at pins nYor nZ, whichever is assigned as an output.
Notes
1. CPD is used to determine the dynamic power dissipation (PDin µW).
PD=C
PD ×VCC2×fi+(C
L+CS)×VCC2×fo) where:
fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
CS= Switch capacitance in pF;
VCC = supply voltage in Volts.
2. For 74HC2G66 the condition is VI= GND to VCC.
For 74HCT2G66 the condition is VI= GND to VCC −1.5 V.
SYMBOL PARAMETER CONDITIONS TYPICAL UNIT
HC2G HCT2G
tPZH/tPZL turn-on time nE to Vos CL= 50 pF; RL=1kΩ;V
CC = 4.5 V 12 13 ns
tPHZ/tPLZ turn-off time nE to Vos CL= 50 pF; RL=1kΩ;V
CC = 4.5 V 12 13 ns
CIinput capacitance 3.5 3.5 pF
CPD power dissipation capacitance per switch notes 1 and 2 9 9 pF
CSswitch capacitance 8 8 pF
2004 May 19 3
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
PINNING
INPUT nE SWITCH
L OFF
HON
TYPE NUMBER PACKAGE
TEMPERATURE
RANGE PINS PACKAGE MATERIAL OUTLINE
VERSION MARKING
74HC2G66DP −40 °C to +125 °C 8 TSSOP8 plastic SOT505-2 H66
74HCT2G66DP −40 °C to +125 °C 8 TSSOP8 plastic SOT505-2 T66
PIN SYMBOL DESCRIPTION
1 1Y independent input or output
2 1Z independent input or output
3 2E enable input (active HIGH)
4 GND ground (0 V)
5 2Y independent input or output
6 2Z independent input or output
7 1E enable input (active HIGH)
8V
CC supply voltage
handbook, halfpage
66
MNB002
1
2
3
4
1Y
1Z
2E
GND
VCC
1E
2Z
2Y
8
7
6
5
Fig.1 Pin configuration.
MNB003
handbook, halfpage
1Y
1E
2Z
1Z
2Y
2E
Fig.2 Logic symbol.
2004 May 19 4
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
MNB004
handbook, halfpage 2
11
1
1
X1
6
5
7#
1
X1
#
3
Fig.3 IEC logic symbol.
handbook, halfpage
MNB005
GND
nZ
nY
nE
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55 °C the value of Ptot derates linearly with 2.5 mW/K.
SYMBOL PARAMETER CONDITIONS 74HC2G66 74HCT2G66 UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
VCC supply voltage 2.0 5.0 10.0 4.5 5.0 5.5 V
VIinput voltage 0 −VCC 0−VCC V
VOoutput voltage 0 −VCC 0−VCC V
Tamb ambient
temperature see DC and AC
characteristics per device −40 +25 +125 −40 +25 +125 °C
tr,t
finputrise and fall
times VCC = 2.0 V −−1000 −−−ns
VCC = 4.5 V −6.0 500 −6.0 500 ns
VCC = 6.0 V −−400 −−−ns
VCC = 9.0 V −−250 −−−ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage −0.5 +11.0 V
IIK input diode current VI<−0.5 V or VI>V
CC + 0.5 V; note 1 −±20 mA
IOK output diode current VO<−0.5 V or VO>V
CC + 0.5 V; note 1 −±20 mA
IOoutput source or sink current −0.5V<V
O<V
CC + 0.5 V; note 1 −±25 mA
ICC, IGND VCC or GND current note 1 −±30 mA
Tstg storage temperature −65 +150 °C
Ptot power dissipation of package Tamb =−40 °C to +125 °C; note 2 −300 mW
Pspower dissipation per switch −100 mW
2004 May 19 5
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
DC CHARACTERISTICS
Type 74HC2G66
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT
OTHER VCC (V)
Tamb =−40 °C to +85 °C; note1
VIH HIGH-level input voltage 2.0 1.5 1.2 −V
4.5 3.15 2.4 −V
6.0 4.2 3.2 −V
9.0 6.3 4.7 −V
VIL LOW-level input voltage 2.0 −0.8 0.5 V
4.5 −2.1 1.35 V
6.0 −2.8 1.8 V
9.0 −4.3 2.7 V
ILI input leakage current VI=V
CC or GND 6.0 −−±0.1 µA
9.0 −−±0.2 µA
Is(OFF) analog switch current,
OFF-state VI=V
IH or VIL;
VS=V
CC −GND;
see Fig.7
9.0 −0.1 1.0 µA
Is(ON) analog switch current,
ON-state VI=V
IH or VIL;
VS=V
CC −GND;
see Fig.8
9.0 −0.1 1.0 µA
ICC quiescent supply current VI=V
CC or GND;
Vis = GND or VCC;
Vos =V
CC or GND
6.0 −−10 µA
9.0 −−20 µA
2004 May 19 6
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
Note
1. All typical values are measured at Tamb =25°C.
Tamb =−40 °C to +125 °C
VIH HIGH-level input voltage 2.0 1.5 −−V
4.5 3.15 −−V
6.0 4.2 −−V
9.0 6.3 −−V
VIL LOW-level input voltage 2.0 −−0.5 V
4.5 −−1.35 V
6.0 −−1.8 V
9.0 −−2.7 V
ILI input leakage current VI=V
CC or GND 6.0 −−±0.1 µA
9.0 −−±0.2 µA
Is(OFF) analog switch current,
OFF-state VI=V
IH or VIL;
VS=V
CC −GND;
see Fig.7
9.0 −−1.0 µA
Is(ON) analog switch current,
ON-state VI=V
IH or VIL;
VS=V
CC −GND;
see Fig.8
9.0 −−1.0 µA
ICC quiescent supply current VI=V
CC or GND;
Vis = GND or VCC;
Vos =V
CC or GND
6.0 −−20 µA
9.0 −−40 µA
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT
OTHER VCC (V)
2004 May 19 7
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
Type 74HCT2G66
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Note
1. All typical values are measured at Tamb =25°C.
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT
OTHER VCC (V)
Tamb =−40 °C to +85 °C; note 1
VIH HIGH-level input voltage 4.5 to 5.5 2.0 1.6 −V
VIL LOW-level input voltage 4.5 to 5.5 −1.2 0.8 V
ILI input leakage current VI=V
CC or GND 5.5 −−±1.0 µA
Is(OFF) analog switch current,
OFF-state VI=V
IH or VIL;
VS=V
CC −GND;
see Fig.7
−0.1 1.0 µA
Is(ON) analog switch current,
ON-state VI=V
IH or VIL;
VS=V
CC −GND;
see Fig.8
−0.1 1.0 µA
ICC quiescent supply current VI=V
CC or GND;
Vis = GND or VCC;
Vos =V
CC or GND
4.5 to 5.5 −−10 µA
∆ICC additional supply current
per input VI=V
CC −2.1 V;
IO=0A 4.5 to 5.5 −−375 µA
Tamb =−40 °C to +125 °C
VIH HIGH-level input voltage 4.5 to 5.5 2.0 −−V
VIL LOW-level input voltage 4.5 to 5.5 −−0.8 V
ILI input leakage current VI=V
CC or GND 5.5 −−±1.0 µA
Is(OFF) analog switch current,
OFF-state VI=V
IH or VIL;
VS=V
CC −GND;
see Fig.7
−−1.0 µA
Is(ON) analog switch current,
ON-state VI=V
IH or VIL;
VS=V
CC −GND;
see Fig.8
−−1.0 µA
ICC quiescent supply current VI=V
CC or GND;
Vis = GND or VCC;
Vos =V
CC or GND
4.5 to 5.5 −−20 µA
∆ICC additional supply current
per input VI=V
CC −2.1 V;
IO=0A 4.5 to 5.5 −−410 µA
2004 May 19 8
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
Resistance RON for 74HC2G66 and 74HCT2G66
See notes 1 and 2.
Notes
1. For 74 HCT2G66 only VCC = 4.5 V applies; for 74HC2G66 all VCC values apply.
2. At supply voltages near 2 V, the analog switch ON-resistance is extremely non linear. When using a supply of 2 V,
it is recommended is to use these devices only for digital signals.
3. All typical values are measured at Tamb =25°C.
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT
OTHER VCC (V) Is (µA)
Tamb =−40 °C to +85 °C; note 3
RON(peak) ON-resistance (peak) Vis =V
CC to GND;
VI=V
IH or VIL;
see Figs 5 and 6
2.0 100 −250 −Ω
4.5 1000 −41 118 Ω
6.0 1000 −30 105 Ω
9.0 1000 −21 88 Ω
RON(rail) ON-resistance (rail) Vis = GND;
VI=V
IH or VIL;
see Figs 5 and 6
2.0 100 −65 −Ω
4.5 1000 −28 95 Ω
6.0 1000 −22 82 Ω
9.0 1000 −18 70 Ω
Vis =V
CC;
VI=V
IH or VIL;
see Figs 5 and 6
2.0 100 −65 −Ω
4.5 1000 −31 106 Ω
6.0 1000 −23 94 Ω
9.0 1000 −19 78 Ω
∆RON maximum variation of
ON-resistance between
the two channels
Vis =V
CC to GND;
VI=V
IH or VIL;
see Figs 5 and 6
4.5 −− 5−Ω
6.0 −− 4−Ω
9.0 −− 3−Ω
Tamb =−40 °C to +125 °C
RON(peak) ON-resistance (peak) Vis =V
CC to GND;
VI=V
IH or VIL;
see Figs 5 and 6
2.0 100 −−−Ω
4.5 1000 −−142 Ω
6.0 1000 −−126 Ω
9.0 1000 −−105 Ω
RON(rail) ON-resistance (rail) Vis = GND;
VI=V
IH or VIL;
see Figs 5 and 6
2.0 100 −−−Ω
4.5 1000 −−115 Ω
6.0 1000 −−100 Ω
9.0 1000 −−80 Ω
Vis =V
CC;
VI=V
IH or VIL;
see Figs 5 and 6
2.0 100 −−−Ω
4.5 1000 −−128 Ω
6.0 1000 −−113 Ω
9.0 1000 −−95 Ω
2004 May 19 9
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
Fig.5 Test circuit for measuring ON-resistance
(RON).
MNA078
V
YZ
Iis
Vis = 0 to VCC - GND
HIGH
(from enable inputs)
GND
handbook, halfpage
02 10
60
40
10
0
20
46 8
MNB006
RON
(Ω)
Vis (V)
VCC = 4.5 V
VCC = 6.0 V
VCC = 9.0 V
Fig.6 Typical ON-resistance (RON) as function of
input voltage (Vis).
Vis =0VtoV
CC.
MNA079
AA
YZ
VI = VCC or GND VO = GND or VCC
LOW
(from enable input)
GND
Fig.7 Test circuit for measuring OFF-state current.
MNA080
AA
YZ
VI = VCC or GND VO (open circuit)
HIGH
(from enable input)
GND
Fig.8 Test circuit for measuring ON-state current.
2004 May 19 10
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
AC CHARACTERISTICS
Type 74HC2G66
GND = 0 V; tr=t
f= 6.0 ns; Vis is the input voltage at pins nYor nZ, whichever is assigned as an input; Vos is the output
voltage at pins nYor nZ, whichever is assigned as an output.
Note
1. All typical values are measured at Tamb =25°C.
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb =−40 °C to +85 °C; note 1
tPHL/tPLH propagation delay
Vis to Vos
RL=∞; see
Figs 16 and 18 2.0 −6.5 65 ns
4.5 −2.0 13 ns
6.0 −1.5 11 ns
9.0 −1.2 10 ns
tPZH/tPZL turn-on time nE to Vos RL=1kΩ; see
Figs 17 and 18 2.0 −40 125 ns
4.5 −12 25 ns
6.0 −10 21 ns
9.0 −716ns
tPHZ/tPLZ turn-off time nE to Vos RL=1kΩ; see
Figs 17 and 18 2.0 −21 145 ns
4.5 −12 29 ns
6.0 −11 28 ns
9.0 −10 23 ns
Tamb =−40 °C to +125 °C
tPHL/tPLH propagation delay
Vis to Vos
RL=∞; see
Figs 16 and 18 2.0 −−80 ns
4.5 −−15 ns
6.0 −−14 ns
9.0 −−12 ns
tPZH/tPZL turn-on time nE to Vos RL=1kΩ; see
Figs 17 and 18 2.0 −−150 ns
4.5 −−30 ns
6.0 −−26 ns
9.0 −−20 ns
tPHZ/tPLZ turn-off time nE to Vos RL=1kΩ; see
Figs 17 and 18 2.0 −−175 ns
4.5 −−35 ns
6.0 −−33 ns
9.0 −−27 ns
2004 May 19 11
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
Type 74HCT2G66
GND = 0 V; tr=t
f= 6.0 ns; Vis is the input voltage at pins nYor nZ, whichever is assigned as an input; Vos is the output
voltage at pins nYor nZ, whichever is assigned as an output.
Note
1. All typical values are measured at Tamb =25°C.
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT
WAVEFORMS VCC (V)
Tamb =−40 °C to +85 °C; note 1
tPHL/tPLH propagation delay
Vis to Vos
RL=∞; see
Figs 16 and 18 4.5 −2.0 15 ns
tPZH/tPZL turn-on time nE to Vos RL=1kΩ; see
Figs 17 and 18 4.5 −13 30 ns
tPHZ/tPLZ turn-off time nE to Vos RL=1kΩ; see
Figs 17 and 18 4.5 −13 44 ns
Tamb =−40 °C to +125 °C
tPHL/tPLH propagation delay
Vis to Vos
RL=∞; see
Figs 16 and 18 4.5 −−18 ns
tPZH/tPZL turn-on time nE to Vos RL=1kΩ; see
Figs 17 and 18 4.5 −−36 ns
tPHZ/tPLZ turn-off time nE to Vos RL=1kΩ; see
Figs 17 and 18 4.5 −−53 ns
2004 May 19 12
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
Type 74HC2G66 and 74HCT2G66
At recommended conditions and typical values; GND = 0 V; tr=t
f= 6.0 ns; Vis is the input voltage at pins nYor nZ,
whichever is assigned as an input; Vos is the output voltage at pins nYor nZ, whichever is assigned as an output.
Notes
1. Adjust input voltage Vis is 0 dBm level (0 dBm = 1 mW into 600 Ω).
2. Adjust input voltage Vis is 0 dBm level at Vos for 1 MHz (0 dBm = 1 mW into 50 Ω).
SYMBOL PARAMETER TEST CONDITIONS TYP. UNIT
OTHER Vis(p-p) (V) VCC (V)
dsin sine-wave distortion f = 1 kHz; RL=10kΩ;
CL= 50 pF; see Fig.14 4.0 4.5 0.04 %
8.0 9.0 0.02 %
f = 10 kHz; RL=10kΩ;
CL= 50 pF; see Fig.14 4.0 4.5 0.12 %
8.0 9.0 0.06 %
αOFF(feedthru) switch OFF signal
feed-through RL= 600 Ω; CL= 50 pF;
f = 1 MHz; see Figs 9 and 15 note 1 4.5 −50 dB
9.0 −50 dB
αct(s) crosstalk between the two
switches RL= 600 Ω; CL= 50 pF;
f = 1 MHz; see Fig 11 note 1 4.5 −60 dB
9.0 −60 dB
Vct(E-S)(p-p) crosstalk voltage between
enable input to the switches
(peak-to-peak value)
RL= 600 Ω; CL= 50 pF;
f = 1 MHz (nE, square wave
between VCC and GND,
tr=t
f= 6.0 ns); see Fig 12
note 1 4.5 110 mV
9.0 220 mV
fmax frequency response (−3 dB) RL=50Ω; CL= 10 pF; see
Figs 10 and 13 note 2 4.5 180 MHz
9.0 200 MHz
CSswitch capacitance 8 pF
2004 May 19 13
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
Fig.9 Typical switch OFF signal feed-through as a function of frequency.
handbook, full pagewidth
0
−20
−40
−60
−80
−100
MNA082
10 102103104105106
f (kHz)
(dB)
Test conditions: VCC = 4.5 V; GND = 0 V; RL=50Ω; RSOURCE =1kΩ.
handbook, full pagewidth
5
0
−5
MNA083
10 102103104105106
f (kHz)
(dB)
Fig.10 Typical frequency response.
Test conditions: VCC = 4.5 V; GND = 0 V; RL=50Ω; RSOURCE =1kΩ.
2004 May 19 14
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
handbook, halfpage
MNB009
2RL
2RL
RL
0.1 µFnZ/nYnY/nZ
channel
ON
CL
VCC
GND
Vis
Fig.11 Test circuit for measuring crosstalk between any two switches.
handbook, halfpage
MNB010
2RL
2RL
2RL
2RLnZ/nYnY/nZ
channel
OFF
CL
VCC VCC
GND
Vos
dB
a. Channel ON condition. b. Channel OFF condition.
handbook, full pagewidth
DUT
MNB011
2RL
2RL
2RL
2RLnZ/nYnY/nZ
CLoscilloscope
VCC nE VCC
VCC
GND
GND
handbook, halfpage
MNB012
V(p−p)
Fig.12 Test circuit for measuring crosstalk between control and any switch.
The crosstalk is defined as follows (oscilloscope output):
2004 May 19 15
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
Fig.13 Test circuit for measuring minimum frequency response.
handbook, full pagewidth
MNA084
0.1 µF
2RL
2RL
Vos
VCC
Vis
CLdB
Z/YY/Z
GND
channel
ON
sine-wave
Adjust input voltage to obtain 0 dBm at Vos when fi= 1 MHz.
After set-up, frequency of fi is increased to obtain a reading of −3 dB at Vos.
Fig.14 Test circuit for measuring sine-wave distortion.
handbook, full pagewidth
MNA085
10 µF
2RL
2RL
Vos
VCC
Vis
CLDISTORTION
METER
Z/YY/Z
GND
fin = 1 kHz
sine-wave channel
ON
Fig.15 Test circuit for measuring switch OFF signal feed-through.
handbook, full pagewidth
MNA086
0.1 µF
2RL
2RL
Vos
VCC
Vis
CLdB
Z/YY/Z
GND
channel
OFF
2004 May 19 16
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
AC WAVEFORMS
handbook, halfpage
MNB007
tPLH tPHL
VM
VM
Vis
Vos
GND
VI
VOH
VOL
Fig.16 Waveforms showing input (Vis) to output (Vos) propagation delay and the output transition time.
74HC2G66: VM= 50%; VI= GND to VCC.
74HCT2G66: VM= 1.3 V; VI= GND to 3.0 V.
handbook, full pagewidth
MNB008
tPLZ
tPHZ
switch
disabled switch
enabled
VY
VX
switch
enabled
output
LOW-to-OFF
OFF-to-LOW
output
HIGH-to-OFF
OFF-to-HIGH
nE
nY or nZ
nY or nZ
VOL
VOH
VCC
VI
VM
GND
GND
tPZL
tPZH
VM
VM
Fig.17 Waveforms showing turn-on and turn-off times.
VX= 10% of signal amplitude.
VY= 90% of signal amplitude.
74HC2G66: VM= 50%; VI= GND to VCC.
74HCT2G66: VM= 1.3 V; VI= GND to 3.0 V.
2004 May 19 17
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
handbook, full pagewidth
open
GND
50 pF
VCC
VCC
VIVO
MNA742
D.U.T.
CL =
RT
RL =
1 kΩ
PULSE
GENERATOR
S1
handbook, full pagewidth
MNA089
tTHL (tf)t
TLH (tr)
VM
tW
positive
input pulse
negative
input pulse
0 V
amplitude
90%
10%
tTLH (tr)t
THL (tf)
VM
tW
0 V
amplitude
90%
10%
Fig.18 Load circuitry for switching times.
Definitions for test circuit:
RL= Load resistor.
CL= Load capacitance including jig and probe capacitance.
RT= Termination resistance should be equal to the output impedance Zo of the pulse generator.
TEST S1
tPLH/tPHL open
tPLZ/tPZL VCC
tPHZ/tPZH GND
Input pulse definition:
tr=t
f= 6 ns, when measuring fmax, there is no constraint on tr, tf with 50% duty factor.
74HC2G66: VM= 50%; VI= GND to VCC.
74HCT2G66: VM= 1.3 V; VI= GND to 3.0 V.
2004 May 19 18
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
PACKAGE OUTLINE
UNIT A1
A
max. A2A3bpLHELpwyv
ceD
(1)
E
(1)
Z
(1)
θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.15
0.00 0.95
0.75 0.38
0.22 0.18
0.08 3.1
2.9 3.1
2.9 0.65 4.1
3.9 0.70
0.35 8°
0°
0.13 0.10.20.5
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
0.47
0.33
SOT505-2 - - - 02-01-16
w
M
bp
D
Z
e
0.25
14
85
θ
A2A1
Lp
(A3)
detail X
A
L
HE
E
c
v
M
A
X
A
y
2.5 5 mm0
scale
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm SOT505-2
1.1
pin 1 index
2004 May 19 19
Philips Semiconductors Product specification
Bilateral switches 74HC2G66; 74HCT2G66
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2004 SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands R44/04/pp20 Date of release: 2004 May 19 Document order number: 9397 750 13255
