ACT102H-600D
AC Thyristor power switch
21 August 2017 Product data sheet
1. General description
An AC Thyristor power switch with very high noise immunity and over-voltage protection configured
for negative gate triggering in a SOT96-1 (SO8) small surface-mountable plastic package
2. Features and benefits
Exclusive negative gate triggering
Full cycle AC conduction
High noise immunity
Remote gate separates the gate driver from the effects of the load current
Surface-mountable package
Very sensitive gate for lowest gate trigger current
Safe clamping of low energy over-voltage transients
Self-protective turn-on during high energy voltage transients
3. Applications
Fan motor circuits
Pump motor circuits
Lower-power highly inductive, resistive and safety loads
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-
state voltage
- - 600 V
IT(RMS) RMS on-state current full sine wave; Tamb ≤ 100 °C; Fig. 1;
Fig. 2
- - 0.2 A
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
- - 8.8 AITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 3; Fig. 4
- - 8 A
Tjjunction temperature - - 125 °C
VPP peak pulse voltage Tj = 25 °C; non-repetitive, off-state;
Fig. 5
- - 2 kV
Static characteristics
IGT gate trigger current VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 7
0.5 - 5 mA
WeEn Semiconductors ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 21 August 2017 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; Fig. 7
0.5 - 5 mA
IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 20 mA
VTon-state voltage IT = 0.3 A; Tj = 25 °C; Fig. 10 - - 1.2 V
VCL clamping voltage ICL = 0.1 mA; tp = 1 ms; Tj = 125 °C 650 - - V
Dynamic charateristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 11
300 - - V/µs
dIcom/dt rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A;
dVcom/dt = 15 V/µs; gate open circuit;
Fig. 12; Fig. 13
0.15 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 n.c. not connected
2 LD Load
3 n.c. not connected
4 n.c. not connected
5 G Gate
6 CM Common
7 CM Common
8 n.c. not connected
4
5
1
8
SO8 (SOT96-1)
001aaj924
G
CM
LD
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
ACT102H-600D SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
WeEn Semiconductors ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 21 August 2017 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state
voltage
- 600 V
IT(RMS) RMS on-state current full sine wave; Tamb ≤ 100 °C; Fig. 1;
Fig. 2
- 0.2 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 8.8 AITSM non-repetitive peak on-
state current full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 3; Fig. 4
- 8 A
I2t I2t for fusing tp = 10 ms; SIN - 0.31 A²s
dIT/dt rate of rise of on-state
current
IG = 10 mA - 50 A/µs
IGM peak gate current t = 20 μs - 1 A
PGM peak gate power - 2 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature -40 150 °C
Tjjunction temperature - 125 °C
VPP peak pulse voltage Tj = 25 °C; non-repetitive, off-state; Fig. 5 - 2 kV
003aaf739
0.08
0.12
0.04
0.16
0.20
Ptot
(W)
0
IT(RMS) (A)
0 0.200.160.08 0.120.04
α
α
α = 180°
α = conduction angle
Fig. 1. Total power dissipation as a function of RMS on-state current; maximum values
WeEn Semiconductors ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 21 August 2017 4 / 13
Ta(°C)
- 50 1501000 50
003aaf740
0.08
0.16
0.24
IT(RMS)
(A)
0
0.04
0.12
0.20
Fig. 2. RMS on-state current as a function of solder point temperature; maximum values
003aac804
0
2
4
6
8
10
1 10 102103
number of cycles
ITSM
(A)
ITSM
t
IT
Tj(init) = 25 °C max
1/f
f = 50 Hz
Fig. 3. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
WeEn Semiconductors ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 21 August 2017 5 / 13
003aaf756
tp(s)
10- 5 10- 1
10- 2
10- 4 10- 3
102
10
103
ITSM
(A)
1
ITSM
t
IT
Tj(init) = 25 °C max
tp
tp ≤ 20 ms
Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values
003aad077
LR
150 Ω 5 µH
2 Ω
220 Ω
RG
Surge Generator
Surge pulse
IEC 61000-4-5 Standards
RGen
Open Circuit Voltage
DUT
Load Model
1.2 µs/50 µs waveform
Fig. 5. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
WeEn Semiconductors ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 21 August 2017 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance
from junction to
ambient free air
full cycle; Fig. 6 - 150 - K/W
003aaf741
tp(s)
10- 3 102103
10110- 2 10- 1
102
10
103
Zth(j-a)
(K/W)
1
tp
P
t
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse width
WeEn Semiconductors ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 21 August 2017 7 / 13
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 7
0.5 - 5 mAIGT gate trigger current
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; Fig. 7
0.5 - 5 mA
VD = 12 V; IG = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 8
- - 25 mAILlatching current
VD = 12 V; IG = 100 mA; LD- G-;
Tj = 25 °C; Fig. 8
- - 25 mA
IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 20 mA
VTon-state voltage IT = 0.3 A; Tj = 25 °C; Fig. 10 - - 1.2 V
VD = 400 V; IT = 100 mA; Tj = 125 °C 0.15 - - VVGT gate trigger voltage
VD = 12 V; IT = 100 mA; Tj = 25 °C - - 0.9 V
VD = 600 V; Tj = 25 °C - - 2 µAIDoff-state current
VD = 600 V; Tj = 125 °C - - 0.2 mA
VCL clamping voltage ICL = 0.1 mA; tp = 1 ms; Tj = 125 °C 650 - - V
Dynamic charateristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 11
300 - - V/µs
dIcom/dt rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A;
dVcom/dt = 15 V/µs; gate open circuit;
Fig. 12; Fig. 13
0.15 - - A/ms
IGT
IGT(25°C)
Tj(°C)
- 50 0 150
100
50
1
2
3
0
003aac809
(1)
(2)
(1)
(2)
(1) LD+ G-
(2) LD- G-
Fig. 7. Normalized gate trigger current as a function of
junction temperature
Tj(°C)
- 50 1501000 50
003aac811
1
2
3
0
IL
IL(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
WeEn Semiconductors ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 21 August 2017 8 / 13
Fig. 9. Normalized holding current as a function of
junction temperature
Vo = 0.758 V; Rs = 0.263 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
A = dVD/dt at condition Tj °C
B = dVD/dt at condition Tj [125] °C
Fig. 11. Normalized rate of rise of off-state voltage as a
function of junction temperature
Tj(°C)
25 12510050 75
003aac814
4
8
12
0
A
B
A = dIcom/dt at condition Tj °C
B = dIcom/dt at condition Tj [125] °C
VD = 400 V
Fig. 12. Normalized critical rate of rise of commutating
current as a function of junction temperature
WeEn Semiconductors ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 21 August 2017 9 / 13
A [B] = dIcom/dt at condition B, dVcom/dt
A [spec] is the data sheet value for dIcom/dt
turn-off time is less than 20 ms
Fig. 13. Normalized critical rate of change of commutating current as a function of critical rate of change of
commutating voltage; minimum values
WeEn Semiconductors ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 21 August 2017 10 / 13
10. Package outline
Plastic small outline package; 8 leads
SO8
A2
D
E
E1
b
e
A1
L
A
(L1)
c
Note:
1. All dimensions don't include mold flash and metal protrusion.
Gauge plane
0.25
Fig. 14. Package outline SO8 (SOT96-1)
WeEn Semiconductors ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 21 August 2017 11 / 13
11. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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WeEn Semiconductors ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 21 August 2017 12 / 13
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Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
WeEn Semiconductors ACT102H-600D
AC Thyristor power switch
ACT102H-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet 21 August 2017 13 / 13
12. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 6
9. Characteristics.............................................................. 7
10. Package outline........................................................ 10
11. Legal information..................................................... 11
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
For more information, please visit: http://www.ween-semi.com
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Date of release: 21 August 2017