B40C800DM thru B380C800DM
Document Number 88533
03-Dec-04
Vishay Semiconductors
www.vishay.com
1
Case Style DFM
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Glass Passivated Ultrafast Bridge Rectifier
Major Ratings and Characteristics
IF(AV) 0.9 A
VRRM 65 V to 600 V
IFSM 45 A
IR10 µA
VF1.0 V
Tj max. 125 °C
Features
UL Recognition, file number E54214
Ideal for automated placement
High surge current capability
Meets MSL level 1, per J-STD-020C
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for SMPS, Lighting Ballaster, Adapter, Bat-
tery Charger, Home Appliances, Office Equipment,
and Telecommunication applications
Mechanical Data
Case: DFM
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and MIL-STD-750, Method
2026
Polarity: As marked on body
Maximum Ratings
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter Symbols B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
Unit
Maximum repetitive peak reverse voltage VRRM 65 125 200 400 600 V
Maximum RMS input voltage R + C-load VRMS 40 80 125 250 380 V
Maximum average forward output current for free air
operation at TA= 45 °C R + L-load
C-load
IF(AV) 0.9
0.8
A
Maximum DC blocking voltage VDC 65 125 200 400 600 V
Maximum peak working voltage VRWM 90 180 300 600 900 V
Maximum non-repetitive peak voltage VRSM 100 200 350 650 1000 V
Maximum repetitive peak forward surge current IFRM 10 A
Peak forward surge current single sine wave on rated load IFSM 45 A
Rating for fusing at TJ = 125 °C (t < 100 ms) I2t 10 A2sec
Minimum series resistor C-load at VRMS = ± 10 % RT 1.0 2.0 4.0 8.0 12
Maximum load capacitance + 50 %
- 10 %
CL 5000 2500 1000 500 200 µF
Operating junction and storage temperature range TJ, TSTG - 40 to + 125 °C
www.vishay.com
2
Document Number 88533
03-Dec-04
B40C800DM thru B380C800DM
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Thermal Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter Test condition Symbol B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
Unit
Maximum instantaneous forward
voltage drop per leg
at 0.9 A VF 1.0 V
Maximum reverse current at rated
repetitive peak voltage per leg
IR 10 µA
Parameter Symbols B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
Units
Typical thermal resistance per leg (1) RθJA
RθJL
40
15
°C/W
Figure 1. Derating Curves Output Rectified Current for
B40C800D...B125C800DM
Figure 2. Derating Curves Output Rectified Current for
B250C800D...B360C800DM
Ambient Temperature C)
Average Forward Output Current (A)
20 40 60
0.2
0.4
0.6
0.8
1.0
80 100 120 140
0
0
50 to 60 H
Z
Resistive or Inductive Load
0-10 µF
10-100 µF
>100 µF
Mounted on P.C.B. with 0.06"
(1.5 mm) Lead Length
Copper Pads
0.51 x 0.51" (13 x 13 mm)
Capacitive Load
Ambient Temperature C)
Average Forward Output Current (A)
60 80 100 140
0
0.2
0.6
0.8
1.0
0.4
020 40 120
0-10 F
10-100 F
>100 F
50 to 60 H
Z
Resistive or Inductive Load
Capacitive Load
Mounted on P.C.B. with 0.06"
(1.5 mm) Lead Length
Copper Pads
0.51 x 0.51" (13 x 13 mm)
µ
µ
µ
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Per Leg
Figure 4. Typical Forward Characteristics Per Leg
Number of Cycles at 50 H
Z
Peak Forward Surge Current (A)
010 100
0
10
20
30
40
50
TJ= 125 °C
10mS Single Sine-Wave
1.0 Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Surge Current (A)
0.4 0.8 1.2
10
1
0.1
0.01
0.6 1.0 1.4
TJ=25 °C
Pulse Width = 300 µs
1% Duty Cycle
VISHAY
B40C800DM thru B380C800DM
Document Number 88533
03-Dec-04
Vishay Semiconductors
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 5. Typical Reverse Leakage Characteristics Per Leg
Instantaneous Reverse Current (µA)
Percent of Rated Peak Reverse Voltage (%)
020 40 60 80 100
0.01
0.1
1
10
TJ=25 °C
TJ= 100 °C
Figure 6. Typical Junction Capacitance Per Leg
Reverse Voltage (V)
Junction Capactiance (pF)
110 100
1
10
100
TJ=25 °C
f = 1.0 MH
Z
Vsig = 50MVp-p
0.315 (8.00)
0.285 (7.24)
0.013 (3.3)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
0.255 (6.5)
0.245 (6.2)
0.335 (8.51)
0.320 (8.12)
0.045 (1.14)
0.035 (0.89)
0.080 (2.03)
0.050 (1.27)
0.023 (0.58)
0.018 (0.46)
0.185 (4.69)
0.150 (3.81)
0.130 (3.3)
0.120 (3.05)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
Case Style DFM