TIP135, TIP136, TIP137 PNP SILICON POWER DARLINGTONS Designed for Complementary Use with TIP130, TIP131 and TIP132 TO-220 PACKAGE (TOP VIEW) 70 W at 25C Case Temperature 8 A Continuous Collector Current B 1 Minimum hFE of 1000 at 4 V, 4 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL TIP135 Collector-base voltage (IE = 0) TIP136 V CBO Emitter-base voltage Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V -60 VCEO TIP137 Continuous collector current -80 -100 TIP135 TIP136 UNIT -60 TIP137 Collector-emitter voltage (IB = 0) VALUE -80 V -100 VEBO -5 IC -8 V A ICM -12 A IB -0.3 A Ptot 70 W Ptot 2 W 1/2LIC2 75 mJ C Tj -65 to +150 Tstg -65 to +150 C TL 260 C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.56 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = -20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP135, TIP136, TIP137 PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE Cobo VEC Collector-emitter breakdown voltage TEST CONDITIONS MIN TIP135 IC = -30 mA IB = 0 (see Note 5) TYP MAX TIP136 -80 TIP137 -100 V VCE = -30 V IB = 0 TIP135 -0.5 VCE = -40 V IB = 0 TIP136 -0.5 VCE = -50 V IB = 0 TIP137 -0.5 VCB = -60 V IE = 0 TIP135 -0.2 VCB = -80 V IE = 0 TIP136 -0.2 Collector cut-off VCB = -100 V IE = 0 TIP137 -0.2 current VCB = -60 V IE = 0 TC = 100C TIP135 -1 VCB = -80 V IE = 0 TC = 100C TIP136 -1 VCB = -100 V IE = 0 TC = 100C TIP137 -1 VEB = -5 V IC = 0 Forward current VCE = -4 V IC = -1 A transfer ratio VCE = -4 V IC = -4 A Collector-emitter IB = -16 mA IC = -4 A saturation voltage IB = -30 mA IC = -6 A VCE = IC = -4 A Collector-emitter cut-off current Emitter cut-off current Base-emitter voltage Output capacitance Parallel diode forward voltage -4 V VCB = -10 V IE = 0 IE = IB = 0 -8 A UNIT -60 -5 mA mA mA 500 (see Notes 5 and 6) 1000 15000 -2 (see Notes 5 and 6) V -3 (see Notes 5 and 6) (see Notes 5 and 6) -2.5 V 200 pF -3.5 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN 1.78 C/W RJA Junction to free air thermal resistance 62.5 C/W 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP135, TIP136, TIP137 PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS135AA 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 10000 1000 VCE = -4 V tp = 300 s, duty cycle < 2% 100 -0*5 -1*0 -10 TCS135AB -2*0 tp = 300 s, duty cycle < 2% IB = I C / 100 -1*5 -1*0 TC = -40C TC = 25C TC = 100C -0*5 -0*5 IC - Collector Current - A -1*0 -10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS135AC VBE(sat) - Base-Emitter Saturation Voltage - V -3*0 -2*5 TC = -40C TC = 25C TC = 100C -2*0 -1*5 -1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% -0*5 -0*5 -1*0 -10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP135, TIP136, TIP137 PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -10 SAS135AB -1*0 -0*1 TIP135 TIP136 TIP137 -0.01 -1*0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.