BDW83C
BDW84C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■BDW 83C IS A STMicroelec tro nic s
PREFERRED SALESTYPE
■COMPLEMENTARY PNP - NPN DEVICES
■HIGH CURRENT CAPABILITY
■FAST SWITCHING SPEED
■HIGH DC CURRENT GAIN
APPLICATIONS
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW83C is a Silicon Epitaxial-Base NPN
power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package. It is intended for
use in power linear and switching applications.
Th e complem entary type is BDW 84C.
®
INT E R NAL SCH E M ATI C DIAG RA M
December 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW83C
PNP BDW84C
VCBO Collector-Base Voltage (IE = 0) 100 V
VCEO Collector-Emitter Voltage (IB = 0) 100 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 15 A
ICM Collector Peak Current 40 A
IBBase Current 0.5 A
Ptot Total Dissipation at Tc ≤ 25 oC130 W
Tstg Storage Temp erature -65 to 150 oC
TjMax. Operating Junctio n Te mperature 150 oC
123
TO-218
1/4