ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
28/3/03
DB92152m-AAS/A5
NON BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTODARLINGTON OUTPUT
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
ll VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The MOC8020, MOC8021 series of optically
coupled isolators consist of an infrared light
emitting diode and NPN silicon photodarlington
in a standard 6pin dual in line plastic package
with the base pin unconnected.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Current Transfer Ratio (500% min)
lBVceo 35V
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lBase pin unconnected for improved noise
immunity in high EMI environment
lHigh sensitivity to low input drive current
lCustom electrical selections available
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -40°C to + 125°C
Operating Temperature -25°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 35V
Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 3.3mW/°C above 25°C)
0.26
0.5
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
1
3 4
6
2 5
Dimensions in mm
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
10.46
9.86
0.6
0.1 1.25
0.75
MOC8020, MOC8021
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.4 VIF = 10mA
Reverse Current (IR)10 µA VR = 4V
Output Collector-emitter Breakdown (BVCEO)35 VIC = 0.1mA
Emitter-collector Breakdown (BVECO)6VIE = 10µA
Collector-emitter Dark Current (ICEO)10-6 ΑVCE = 10V
Coupled Output Collector Current ( IC )(Note 2)
MOC8020 50 mA 10mA IF , 5V VCE
MOC8021 100 mA 10mA IF , 5V VCE
Input to Output Isolation Voltage VISO 5300 VRMS (note 1)
7500 VPK (note 1)
Input-output Isolation Resistance RISO 1011 ΩVIO = 500V (note 1)
Response Time (Rise), tr 60 µsVCE= 2V, IC= 10mA,
Response Time (Fall), tf 53 µsRL = 100Ω , fig.1
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB92152m-AAS/A5
28/3/03
FIGURE 1
28/03/03 DB92152m-AAS/A5
Fig.1 Forw ard Current vs. Fig.2 Collector Power Di ssipation vs.
Ambient Temperature
Fig.4 For ward Current vs . Forward
F
0-25
Collector-emitter Voltage
Fig.6 Collector Current vs.
Current
Fig.3 Cur rent Transf e r Ratio vs. Fo rward
Forward current I (mA)
Collector power dissipation P c (mW)
Current transfer ratio CT R (%)
Forward current IF (mA)
A mbient te mperatur e Ta ( C) A mbient te mperatur e Ta ( C)
125
60
0
50
100
150
200
0
012345
0.1
0110
0
0
60
Ambient Temperature
o
Voltage
IF=5mA
1mA
VCE=2V
3500
50
40
30
20
10
481062
2mA
100
80
60
40
20
3000
2500
2000
1500
1000
500
10
30
50
70
90
Forward current (mA)
0.5
1
100
10
1.91.3
Forward voltage (V)
0.90.7 1.1 1.5 1.7
60 C
100 C
80 C
o
o
o
o
40 C
o
20 C
1007550250-25 0 5025 75 100 125
Fig.5 Collector Current vs.
Collector-emitter Voltage
Collector current Ic (mA)
Collector-emitter voltage V ce (V) Collector-emitter voltage V ce (V)
Collector current Ic (mA)
50
40
30
20
10
IF=1mA 0.9mA
0.8mA
0.7mA0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
o
PC(MAX.) PC(MAX.)
28/03/03 DB92152m-AAS/A5
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current vs.
Ambient Temperature Fig.10 Response Time vs. Load
CEO
CE
vs. Ambient Temperature
0
I = 1mA
V = 2V
CE
FF
Ic= 5mA
I = 20mA
10
10
Ambient temperature Ta ( C)
Relative current transfer ratio (%)
Col le ctor -emitter sa tu ration volta ge
V (sat) (V)
Collector dark current I (nA)
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
100
1.0
10080604020 10.1
2
5
10
2
5
10
2
5
10
2
5
O
OO
Resistance
0.01
Voltage gain A v (dB)
-20 1
Frequency f (kHz)
0.1 100
Fig.11 Frequenc y Response
80604020
0.8
0.6
0.4
0.2
V = 10V
CE
0.10
1.00
10.00
Response time ( s)
Load resistance RL (k )
0
2
3
VCE=2V
IC=10mA
0
-10
VCE=2V
IC=2mA
10
RL=10k 1k 100
Test Circuit for Response Time
Test Circuit for Frequency Response
Input Output
Input
Output
Vcc
td
tr tf
ts 90%
10%
Output
Vcc
tf
tr
td
ts
20
0.00
1.00
10040 60 80
0.80
0.60
0.40
0.20
RL
RD
RDRL
