IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C, VGS=10 V 70 A
TC=100 °C,
VGS=10 V2) 48
Pulsed drain current1) ID,pulse TC=25 °C 280
Avalanche energy, single pulse1) EAS ID=35A 410 mJ
Avalanche current, single pulse IAS 70 A
Gate source voltage VGS ±20 V
Power dissipation Ptot TC=25 °C 125 W
Operating and storage temperature Tj, Tstg -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
VDS 100 V
RDS(on),max (SMD version) 11.3 mΩ
ID70 A
Product Summary
PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2
Type Package Marking
IPB70N10S3-12 PG-TO263-3-2 3N1012
IPI70N10S3-12 PG-TO262-3-1 3N1012
IPP70N10S3-12 PG-TO220-3-1 3N1012
Rev. 1.0 page 1 2008-02-12
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics1)
Thermal resistance, junction - case RthJC - - 1.2 K/W
Thermal resistance, junction -
ambient, leaded RthJA --62
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm2 cooling area2) --40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID= 1 mA 100 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=83µA 2.0 3.0 4.0
Zero gate voltage drain current IDSS
VDS=80 V, VGS=0 V,
Tj=25 °C - 0.01 1 µA
VDS=80 V, VGS=0 V,
Tj=125 °C2) - 1 100
Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=70A - 9.7 11.6 mΩ
VGS=10V, ID=70A,
SMD version - 9.4 11.3
Values
Rev. 1.0 page 2 2008-02-12
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics1)
Input capacitance Ciss - 3350 4355 pF
Output capacitance Coss - 940 1222
Reverse transfer capacitance Crss - 105 158
Turn-on delay time td(on) -17-ns
Rise time tr-8-
Turn-off delay time td(off) -25-
Fall time tf-8-
Gate Char
g
e Characteristics1)
Gate to source charge Qgs -1723nC
Gate to drain charge Qgd -1219
Gate charge total Qg-5166
Gate plateau voltage Vplateau - 5.5 - V
Reverse Diode
Diode continous forward current1) IS- - 70 A
Diode pulse current1) IS,pulse - - 280
Diode forward voltage VSD
VGS=0 V, IF=70 A,
Tj=25 °C 0.6 1 1.2 V
Reverse recovery time1) trr
VR=50V, IF=IS,
diF/dt=100A/µs - 100 - ns
Reverse recovery charge1) Qrr - 265 - nC
1) Defined by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
TC=25°C
Values
VGS=0V, VDS=25V,
f=1MHz
VDD=20 V, VGS=10 V,
ID=70 A, RG=3.5 Ω
VDD=80 V, ID=70 A,
VGS=0 to 10 V
Rev. 1.0 page 3 2008-02-12
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V ID = f(TC); VGS ≥ 6 V; SMD
3 Safe operating area 4 Max. transient thermal impedance
ID = f(VDS); TC = 25 °C; D = 0; SMD ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
VDS [V]
ID [A]
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
10-3
tp [s]
ZthJC [K/W]
0
25
50
75
100
125
150
0 50 100 150 200
TC [°C]
Ptot [W]
0
20
40
60
80
0 50 100 150 200
TC [°C]
ID [A]
Rev. 1.0 page 4 2008-02-12
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID = f(VDS); Tj = 25 °C; SMD RDS(on) = f(ID); Tj = 25 °C; SMD
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID = f(VGS); VDS = 6V RDS(on) = f(Tj); ID = 70 A; VGS = 10 V; SMD
parameter: Tj
5
7
9
11
13
15
17
19
21
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
5 V
5.5 V
6 V
6.5 V
7 V
10 V
0
40
80
120
160
200
240
280
320
360
400
012345
VDS [V]
ID [A]
5.5 V 6 V
6.5 V
7 V
10 V
8
10
12
14
16
18
20
0 20 40 60 80 100 120
ID [A]
RDS(on) [mΩ]
-55 °C
25 °C
175 °C
0
50
100
150
200
250
34567
VGS [V]
ID [A]
Rev. 1.0 page 5 2008-02-12
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS = VDS C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: ID
11 Typical forward diode characteristicis 12 Typ. avalanche characteristics
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF [A]
80 µA
400 µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
102
103
104
0 5 10 15 20 25 30
VDS [V]
C [pF]
101
25 °C
100 °C
150 °C
1
10
100
0.1 1 10 100 1000
tAV [µs]
IAV [A]
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF [A]
Rev. 1.0 page 6 2008-02-12
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
13 Typical avalanche energy 14 Typ. drain-source breakdown voltage
EAS = f(Tj)VBR(DSS) = f(Tj); ID = 1 mA
parameter: ID
15 Typ. gate charge 16 Gate charge waveforms
VGS = f(Qgate); ID = 70 A pulsed
parameter: VDD
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
90
95
100
105
110
115
-55 -15 25 65 105 145
Tj [°C]
VBR(DSS) [V]
20 V 80 V
0
1
2
3
4
5
6
7
8
9
10
0 1020304050
Qgate [nC]
VGS [V]
70 A
35 A
17.5 A
0
200
400
600
800
1000
25 75 125 175
Tj [°C]
EAS [mJ]
Rev. 1.0 page 7 2008-02-12
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved.
Legal Disclaime
r
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.0 page 8 2008-02-12
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
Revision History
Version ChangesDate
Rev. 1.0 page 9 2008-02-12
