© 2001 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C55A
IC90 TC= 90°C30A
ICM TC= 25°C, 1 ms 110 A
SSOA VGE = 15 V, TJ = 125°C, RG = 2.7 Ω ICM = 60 A
(RBSOA) Clamped inductive load, VCC= 0.8 VCES @ 0.8 VCES
tSC VGE = 15 V, VCE = 360 V, TJ = 125°C 10µs
(SCSOA) RG = 33 Ω, non repetitive
PCTC= 25°C 200 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 µA, VGE = 0 V 600 V
VGE(th) IC= 2.5 mA, VCE = VGE 47V
ICES VCE = 0.8 VCES TJ = 25°C 100 µA
VGE = 0 V TJ = 125°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) VGE = 15 V; IC = IC90 30N60B 2.0 V
30N60C 2.5 V
Features
lInternational standard packages
lShort Circuit SOA capability
lHigh frequency IGBT
lNew generation HDMOSTM process
Applications
lAC motor speed control
lDC servo and robot drives
lDC choppers
lUninterruptible power supplies (UPS)
lSwitch-mode and resonant-mode
power supplies
Advantages
lEasy to mount with 1 screw
(isolated mounting screw hole)
lSurface mountable, high power case
style
lReduce assembly time and cost
lHigh power density
98519B (11/01)
G = Gate
S = Source TAB = Drain
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
(TAB)
G
S
High Speed IGBT
Short Circuit SOA Capability
VCES ICES tfi
IXSH/IXST 30N60B 600 V 2.0 V 140 ns
IXSH/IXST 30N60C 600 V 2.5 V 70 ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = IC90; VCE = 10 V, 10 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 3100 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 240 pF
Cres 30 pF
Qg100 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 nC
Qgc 38 nC
td(on) 30 ns
tri 30 ns
td(off) 30N60B 150 270 ns
30N60C 90 150 ns
tfi 30N60B 140 270 ns
30N60C 70 120 ns
Eoff 30N60B 1.5 2.5 mJ
30N60C 0.7 1.2 mJ
td(on) 35 ns
tri 35 ns
Eon 0.5 mJ
td(off) 30N60B 270 ns
30N60C 150 ns
tfi 30N60B 250 ns
30N60C 140
Eoff 30N60B 2.5 mJ
30N60C 1.2 mJ
RthJC 0.62 K/W
RthCK (TO-247) 0.25 K/W
Inductive load, TJ = 125°°
°°
°C
IC= IC90, VGE = 15 V
VCE = 0.8 VCES, RG = 4.7 Ω
Note 1
TO-247 AD Outline
Inductive load, TJ = 25°°
°°
°C
IC= IC90, VGE = 15 V
VCE = 0.8 VCES, RG = 4.7 Ω
Note 1
IXSH/IXST 30N60B
IXSH/IXST 30N60C
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG.
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-268 Outline
Min Recommended Footprint
© 2001 IXYS All rights reserved
VCE-Volts
0 5 10 15 20 25 30 35 40
Capa citance - pF
10
100
1000
10000
TJ - Degrees C
25 50 75 100 125 150
V
CE (sat)
- Normalized
0.6
0.8
1.0
1.2
1.4
1.6
VCE - Volts
012345
I
C
- Amperes
0
20
40
60
80
100
VGE - Volts
4 6 8 10121416
I
C
- Amperes
0
20
40
60
80
100
120
140
VCE - Volts
0246810
I
C
- Amperes
0
40
80
120
160
200
13V 11V
9V
7V
VCE = 10V
TJ = 25°C VGE = 15V
TJ = 25°C
IC = 15A
IC = 30A
IC = 60A
TJ = 125°C
Crss
f = 1Mhz
7V 5V
VGE = 15V
TJ = 25°C
VCE - Volts
0246810
I
C
- Amperes
0
20
40
60
80
100
120 TJ = 125°C
Ciss
Coss
VGE = 15V
7V
9V
11V
13V
VGS=15V
9V
11V
13V
Fig.3 Collector-Emitter Voltage Fig.4 Temperature Dependence
vs. Gate-Emitter Voltage of Output Saturation Voltage
Fig.5 Input Admittance Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
Fig.1 Saturation Characteristics Fig.2 Output Characterstics
IXSH/IXST 30N60B
IXSH/IXST 30N60C
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Puls e Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
(K/W)
0.001
0.01
0.1
1
D=0.2
VCE - Volts
0 100 200 300 400 500 600
I
C
- Amperes
0.1
1
10
100
Qg - nano coul ombs
0 25 50 75 100 125
V
GE
- Volts
0
3
6
9
12
15
RG - Ohms
0 1020304050
E
(OFF)
- millijoules
0
2
4
6
8
E
(ON)
- millijoules
0.0
0.5
1.0
1.5
2.0 TJ = 125°C
IC - Amperes
0 20406080
E
(OFF)
- milliJoules
0.0
2.5
5.0
7.5
E
(ON)
- milli j oules
0.0
0.5
1.0
1.5
VCE = 300V
IC = 30A
IC =30A
E(ON) E(OFF)
E(OFF)
E(OFF)
TJ = 125°C
RG = 4.7 Ω
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
RG = 10Ω
TJ = 125°C IC = 60A
IC = 15A
E(OFF)
E(ON)
E(ON)
E(ON)
Fig.11 Transient Thermal Impedance
Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area
Fig.7 Turn-Off Energy per Pulse and Fig.8 Dependence of Turn-Off Energy
Fall Time on Collector Current Per Pulse and Fall Time on RG
IXSH/IXST 30N60B
IXSH/IXST 30N60C
