ON Semiconductor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJE18002D2 POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit. The main advantages brought by these new transistors are: * Improved Global Efficiency Due to the Low Base Drive Requirements * DC Current Gain Typically Centered at 45 * Extremely Low Storage Time Variation, Thanks to the Antisaturation * Network Easy to Use Thanks to the Integrated Collector/Emitter Diode The ON Semiconductor Six Sigma philosophy provides tight and reproductible parameter distribution. * High speed High gain Bipolar transistor ** Power Factor Control CASE 221A-00 TO-220AB IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Sustaining Voltage VCEO 450 Vdc Collector-Base Breakdown Voltage VCBO 1000 Vdc Collector-Emitter Breakdown Voltage VCES 1000 Vdc Emitter-Base Voltage VEBO 12 Vdc Collector Current -- Continuous -- Peak (1) IC ICM 2 5 Adc Base Current -- Continuous Base Current -- Peak (1) IB IBM 1 2 Adc *Total Device Dissipation @ TC = 25C *Derate above 25C PD 50 0.4 Watt W/C TJ, Tstg -65 to 150 C RJC RJA 2.5 62.5 C/W TL 260 C Operating and Storage Temperature THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 2 1 Publication Order Number: MJE18002D2/D MJE18002D2 IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ VCEO(sus) 450 570 Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 500 V, VEB = 0) @ TC = 25C @ TC = 125C @ TC = 125C Emitter-Cutoff Current (VEB = 10 Vdc, IC = 0) Vdc ICEO 100 Adc ICES 100 500 100 Adc IEBO 100 Adc ON CHARACTERISTICS Base-Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) (IC = 1 Adc, IB = 0.2 Adc) Collector-Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) (IC = 1 Adc, IB = 0.2 Adc) DC Current Gain (IC = 0.4 Adc, VCE = 1 Vdc) (IC = 1 Adc, VCE = 1 Vdc) VBE(sat) Vdc @ TC = 25C @ TC = 25C 0.78 0.87 1 1.1 @ TC = 25C @ TC = 125C 0.36 0.5 0.6 1 @ TC = 25C @ TC = 125C 0.4 0.65 0.75 1.2 VCE(sat) Vdc hFE @ TC = 25C @ TC = 125C 14 8 25 15 @ TC = 25C @ TC = 125C 6 4 10 6 -- DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Input Capacitance (VEB = 8 Vdc) fT 13 Cob 50 100 pF Cib 340 500 pF VEC 1.2 1.5 V MHz DIODE CHARACTERISTICS Forward Diode Voltage (IEC = 1 Adc) @ TC = 25C (IEC = 0.2 Adc) @ TC = 25C @ TC = 125C 0.9 0.6 1.2 (IEC = 0.4 Adc) @ TC = 25C @ TC = 125C 1 0.6 1.3 tfr Forward Recovery Time (IF = 0.2 Adc, di/dt = 10 A/s) @ TC = 25C (IF = 0.4 Adc, di/dt = 10 A/s) @ TC = 25C 517 (IF = 1 Adc, di/dt = 10 A/s) @ TC = 25C 480 http://onsemi.com 2 540 ns MJE18002D2 IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIII IIII IIIII IIII IIII IIII IIII III IIIIIIII IIIII IIII IIIII IIII IIII IIII IIII III IIIIIIII IIIII IIII IIIII IIII IIII IIII IIII III IIIIIIII IIIII IIII IIIII IIII IIII IIII IIII III IIIIIIII IIIII IIII IIIII IIII IIII IIII IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 100 94 150 ns 1.25 s SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) Turn-on Time Turn-off Time IC = 1 Adc, IB1 = 0.2 Adc IB2 = 0.5 0 5 Adc VCC = 300 Vdc @ TC = 25C @ TC = 125C ton @ TC = 25C @ TC = 125C toff 0.95 1.5 SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) Fall Time @ TC = 25C @ TC = 125C tf 130 120 175 ns @ TC = 25C @ TC = 125C ts 0.55 0.7 0.65 s Crossover Time @ TC = 25C @ TC = 125C tc 110 100 175 ns Fall Time @ TC = 25C @ TC = 125C tf 130 140 175 ns @ TC = 25C @ TC = 125C ts 2.4 s Crossover Time @ TC = 25C @ TC = 125C tc 275 350 350 ns Fall Time @ TC = 25C @ TC = 125C tf 100 100 150 ns @ TC = 25C @ TC = 125C ts 1.05 1.45 1.2 s @ TC = 25C @ TC = 125C tc 100 115 150 ns @ 1 s @ TC = 25C VCE(dsat) 7.4 @ 3 s @ TC = 25C 2.5 @ 1 s @ TC = 25C 11.7 @ 3 s @ TC = 25C 1.3 Storage Time Storage Time Storage Time IC = 0.4 Adc IB1 = 40 mAdc IB2 = 0.2 Adc IC = 0.8 Adc IB1 = 160 mAdc IB2 = 160 mAdc IC = 1 Adc IB1 = 0.2 Adc IB2 = 0.5 Adc Crossover Time 2.1 3 DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 IC = 0.4 Adc IB1 = 40 mA VCC = 300 V IC = 1 Adc IB1 = 0 0.2 2A VCC = 300 V http://onsemi.com 3 V MJE18002D2 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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