Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263) Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SA1294
–230
–230
–5
–15
–4
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1294
–100max
–100max
–230min
50min∗
–2.0max
35typ
500typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
VCB=–230V
VEB=–5V
IC=–25mA
VCE=–4V, IC=–5A
IC=–5A, IB=–0.5A
VCE=–12V, IE=2A
VCB=–10V, f=1MHz
VCC
(V)
–60
RL
(Ω)
12
IC
(A)
–5
VBB2
(V)
5
IB2
(mA)
500
ton
(
µ
s)
0.35typ
tstg
(
µ
s)
1.50typ
tf
(
µ
s)
0.30typ
IB1
(mA)
–500
LAPT 2SA1294
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
Safe Operating Area (Single Pulse)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–5
–10
–15
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–3.0A
–50mA
–100mA
I
B
=–20mA
–1.5A
–1.0A
–500mA
–300mA
–200mA
0
– 3
–2
–1
0 –0.5 –1.0 –2.0–1.5
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–10A
–5A
–0.02 –0.1 –1 –10–5–0.5 –15
10
50
100
200
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
Typ
–3 –10 –100 –300
–0.1
–0.05
–1
–0.5
–10
–40
–5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
10ms
DC
Without Heatsink
Natural Cooling
0.02 0.1 1 10
0
20
40
60
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Typ
0.1
1
3
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
θj-a–t Characteristics
fT–IE Characteristics
(Typical)
130
100
50
3.5
0
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 150
0
–15
–10
–5
0 –2 –2.5–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (CaseTemp)
25˚C (CaseTemp)
–30˚C (CaseTemp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –15–10
10
50
100
200
Collector Current IC(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
–2.0A
VBB1
(V)
–10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9±0.3
4.0 2.0
5.0±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
15
∗hFE Rank O(50to100), Y(70to140)
