PD - 9.1095B IRF7103 HEXFET(R) Power MOSFET l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 50V D1 RDS(on) = 0.130 D2 D2 ID = 3.0A Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C VGS dv/dt TJ, TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units 3.0 2.3 10 2.0 0.016 20 4.5 -55 to + 150 A W W/C V V/nS C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Min. Typ. Max. Units --- --- 62.5 C/W 8/25/97 IRF7103 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS Min. 50 --- --- --- 1.0 --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.049 0.11 0.16 --- 3.8 --- --- --- --- 12 1.2 3.5 9.0 8.0 45 25 Max. Units Conditions --- V V GS = 0V, I D = 250A --- V/C Reference to 25C, I D = 1mA 0.13 VGS = 10V, I D = 3.0A 0.20 VGS = 4.5V, ID = 1.5A 3.0 V VDS = VGS , ID = 250A --- S V DS = 15V, ID = 3.0A 2.0 VDS = 40V, VGS = 0V A 25 VDS = 40V, VGS = 0V, TJ = 55 C 100 VGS = 20V nA -100 VGS = - 20V 30 I D = 2.0A --- nC VDS = 25V --- VGS = 10V 20 VDD = 25V 20 I D = 1.0A ns 70 R G = 6.0 50 RD = 25 Qg Q gs Q gd t d(on) tr t d(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance --- 4.0 --- LS Internal Source Inductance --- 6.0 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 290 140 37 --- --- --- IGSS D nH pF Between lead,6mm(0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz G Source-Drain Ratings and Characteristics IS ISM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 2.0 showing the A G integral reverse --- --- 12 p-n junction diode. S --- --- 1.2 V TJ = 25C, IS = 1.5A, VGS = 0V --- 70 100 ns TJ = 25C, IF = 1.5A --- 110 170 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ISD 1.8A, di/dt 90A/s, VDD V(BR)DSS , TJ 150C Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. S IRF7103 C, IRF7103 IRF7103 VDS VGS RD D.U.T. RG + - VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7103 Current Regulator Same Type as D.U.T. QG 50K .2F 12V .3F 10V QGS QGD VG D.U.T. + V - DS VGS 3mA Charge IG ID Current Sampling Resistors Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit IRF7103 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS ISD * IRF7103 Package Outline SO8 Outline INCHES DIM D -B- 5 8 7 6 5 1 2 3 4 e 6X 0.25 (.010) M A M MIN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e K x 45 e1 e1 A -C- 0.10 (.004) L 8X A1 B 8X 0.25 (.010) MAX 5 H E -A- 6 C 8X .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC .2284 .2440 5.80 K .011 .019 0.28 0.48 L 0.16 .050 0.41 1.27 8 0 8 0 6.20 RECOMMENDED FOOTPRINT NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 6 MAX H M C A S B S MILLIMETERS MIN 0.72 (.028 ) 8X 6.46 ( .255 ) 1.78 (.070) 8X MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X Part Marking Information SO8 E X A M P LE : TH IS IS A N IR F 7 101 3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X F 7 101 T OP PART NUMBER W AFER LO T C O D E (LA S T 4 D IG IT S ) B O T TO M IRF7103 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) T ER M IN A L N U M B E R 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E ED D IR E C T IO N N O TE S: 1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R. 2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ). 3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 . 33 0. 00 (12 .99 2) M A X. 1 4. 40 ( .5 66 ) 1 2. 40 ( .4 88 ) N O T ES : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. 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