Q2–1/8
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor.The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
∗ Simplifies Circuit Design
∗ Reduces Board Space
∗ Reduces Component Count
∗ The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
∗ Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RL34
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
NPN SILICON
BIAS RESISTOR
TRANSISTOR
Bias Resistor T ransistor
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage V CEO 50 Vdc
Collector Current I C 100 mAdc
Total Power Dissipation @ T A = 25°C (1) P D200 mW
Derate above 25°C1.6 mW/°C
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance — Junction-to-Ambient (surface mounted) R θJA 625 °C/W
Operating and Storage Temperature Range TJ , Tstg –65 to +150 °C
Maximum Temperature for Soldering Purposes T L 260 °C
Time in Solder Bath 10 Sec
DEVICE MARKING AND RESISTOR VALUES
Device Marking R 1 ( K) R 2 ( K)
MMUN2211RLT1 A8A 10 10
MMUN2212RLT1 A8B 22 22
MMUN2213RLT1 A 8C 47 47
MMUN2214RLT1 A8D 10 47
MMUN2215RLT1 (2) A8E 10
MMUN2216RLT1 (2) A8F 4.7
MMUN2230RLT1 (2) A8G 1 1
MMUN2231RLT1 (2) A8H 2.2 2.2
MMUN2232RLT1 (2) A8J 4.7 4.7
MMUN2233RLT1 (2) A8K 4.7 47
MMUN2234RLT1 (2) A8L 22 47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
R1
R2
PIN3
Collector
(output)
PIN1
base
(Input) PIN2
Emitter
(Ground)
88
1
3
2
Q2–2/8
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB=50V, I E = 0) I CBO - - 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I CEO - - 500 nAdc
Emitter-Base Cutoff Current MMUN221 1RL T 1 I EBO - - 0.5 mAdc
(VEB = 6.0 V, IC = 0) MMUN2212RLT1 - - 0.2
MMUN2213RLT1 - - 0.1
MMUN2214RLT1 - - 0.2
MMUN2215RLT1 - - 0.9
MMUN2216RLT1 - - 1.9
MMUN2230RLT1 - - 4.3
MMUN2231RLT1 - - 2.3
MMUN2232RLT1 - - 1.5
MMUN2233RLT1 - - 0.18
MMUN2234RLT1 - - 0.13
Collector-Base Breakdown Voltage (IC=10mA, IE=0) V(BR)CBO 50 - - Vdc
Collector-Emitter Breakdown Voltage(3)(IC=2.0mA, IB=0) V(BR)CEO 50 - - Vdc
ON CHARACTERISTICS (3)
DC Current Gain MMUN2211RLT1 hFE 35 60 -
(VCE = 10 V, IC = 5.0 mA) MMUN2212RLT1 60 100 -
MMUN2213RLT1 80 140 -
MMUN2214RLT1 80 140 -
MMUN2215RLT1 160 350 -
MMUN2216RLT1 160 350 -
MMUN2230RLT1 3.0 5.0 -
MMUN2231RLT1 8.0 15 -
MMUN2232RLT1 15 30 -
MMUN2233RLT1 80 200 -
MMUN2234RLT1 80 150 -
Collector-Emitter Saturation Voltage (IC=10mA, I E=0.3mA) VCE(sat) - - 0.25 Vdc
(IC = 10 mA, IB = 5 mA) MMUN2230RLT1 MMUN2231RL T1
(IC = 10 mA, IB = 1 mA) MMUN2215RLT1 MMUN2216RL T1
MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1
Output Voltage (on) VOL Vdc
(VCC=5.0V,VB=2.5V, RL=1.0kΩ) MMUN2211RLT1 - - 0.2
MMUN2212RLT1 - - 0.2
MMUN2214RLT1 - - 0.2
MMUN2215RLT1 - - 0.2
MMUN2216RLT1 - - 0.2
MMUN2230RLT1 - - 0.2
MMUN2231RLT1 - - 0.2
MMUN2232RLT1 - - 0.2
MMUN2233RLT1 - - 0.2
MMUN2234RLT1 - - 0.2
(VCC =5.0V,VB=3.5V, RL= 1.0kΩ) MMUN2213RLT1 - - 0.2
Output Voltage(off)(VCC=5.0V,VB=0.5V, RL=1.0kΩ)V
OH 4.9 - - Vdc
(VCC=5.0V,VB=0.050V, RL=1.0kΩ) MMUN2230RLT1
(VCC=5.0V,VB=0.25V, RL=1.0kΩ) MMUN2215RLT1
MMUN2216RLT1
MMUN2233RLT1
MMUN2211RLT1 SERIES
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Q2–3/8
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (3)
Input Resistor MMUN2211RLT1 R1 7 .0 1 0 1 3 k Ω
MMUN2212RLT1 15.4 22 28.6
MMUN2213RLT1 32.9 47 61.1
MMUN2214RLT1 7.0 10 13
MMUN2215RLT1 7.0 10 13
MMUN2216RLT1 3.3 4.7 6.1
MMUN2230RLT1 0.7 1.0 1.3
MMUN2231RLT1 1.5 2.2 2.9
MMUN2232RLT1 3.3 4.7 6.1
MMUN2233RLT1 3.3 4.7 6.1
MMUN2234RLT1 15.4 22 28.6
Resistor Ratio MMUN221 1RLT1 MMUN2212RL T1 MMUN2213RLT1 R1/R2 0.8 1.0 1.2
MMUN2214RLT1 0.17 0.21 0.25
MMUN2215RLT1 MMUN2216RLT1 — — —
MMUN2230RL T1 MMUN2231RLT1 MMUN2232RLT1 0.8 1.0 1.2
MMUN2233RLT1 0.055 0.1 0.185
MMUN2234RLT1 0.38 0.47 0.56
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
MMUN2211RLT1 SERIES
Q2–4/8
1000
100
10 1 10 100
4
3
2
1
001020304050
250
200
150
100
50
0–50 0 50 10 150
1
0.1
0.01
0.001
MMUN2211RLT1 SERIES
T
A
= –25°C
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211RLT1
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
V in , INPUT VOLT AGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOL TS)
Figure 5. V CE(sat) versus I C
I C , COLLECTOR CURRENT (mA)
Figure 6. V CE(sta) versus I C
P D , POWER DISSIPA TION (MILLIWA TTS)
V
CE( sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
C ob , CAP ACITANCE (pF)
I C , COLLECTOR CURRENT (mA) h FE , DC CURRENT GAIN (NORMALIZED)
020406080
100
10
1
0.1
0.01
0.001 012345678910
10
1
0.1 01020304050
25°C
T
A
=75°C
–25°C
75°C
25°C
T
A
= –25°C
25°C
75°C
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
V
O
= 5 V
V
CE
= 10 V
V
O
= 0.2 V
R
θJA
= 625°C/W
I
C
/I
B
=10
T
A
= –25°C
25°C
75°C
Q2–5/8
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212RLT1
I C , COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
1000
100
10 1 10 100
4
3
2
1
001020304050
1
0.1
0.01
0.001
V in , INPUT VOLT AGE (VOLTS)
V
CE( sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
C ob , CAP ACITANCE (pF)
I C , COLLECTOR CURRENT (mA) h FE , DC CURRENT GAIN (NORMALIZED)
020406080
100
10
1
0.1
0.01
0.001 012345678910
100
10
1
0.1 01020304050
T
A
=75°C
–25°C
25°C
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
V
CE
= 10 V
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance V in , INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input Voltage
I C , COLLECTOR CURRENT (mA)
Figure 1 1. Input Voltage versus Output Current
I
C
/I
B
=10 T
A
= –25°C
25°C
75°C
T
A
= –25°C
25°C
75°C
V
O
= 5 V
T
A
= –25°C
25°C
75°C
V
O
= 0.2 V
Q2–6/8
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2213RLT1
I C , COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) versus I C
1000
100
10 1 10 100
1
0.8
0.6
0.4
0.2
001020304050
10
1
0.1
0.01
V in , INPUT VOLT AGE (VOLTS)
V
CE( sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
C ob , CAP ACITANCE (pF)
I C , COLLECTOR CURRENT (mA) h FE , DC CURRENT GAIN (NORMALIZED)
020406080
100
10
1
0.1
0.01
0.001 012345678910
100
10
1
0.1 01020304050
I C , COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance V in , INPUT VOLTAGE (VOLTS)
Figure 15. Output Current versus Input Voltage
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
I
C
/I
B
=10 T
A
= –25°C
75°C
25°C T
A
=75°C
–25°C
25°C
V
O
= 2 V
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
25°C
75°C
T
A
=–25°C
V
CE
= 10 V
V
O
= 5 V
T
A
= –25°C
25°C
75°C
Q2–7/8
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214RLT1
I C , COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
300
250
200
150
100
50
01 2 4 6 8 1015204050 60708090100
4
3.5
3
2.5
2
1.5
1
0.5
0
1
0.1
0.01
0.001
V in , INPUT VOLT AGE (VOLTS)
V
CE( sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
C ob , CAP ACITANCE (pF)
I C , COLLECTOR CURRENT (mA) h FE , DC CURRENT GAIN (NORMALIZED)
020406080
100
10
1012345678910
10
1
0.1 01020304050
I C , COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance V in , INPUT VOLTAGE (VOLTS)
Figure 20. Output Current versus Input Voltage
V
O
= 5 V
I
C
/I
B
=10 T
A
= –25°C
75°C
25°C
V
CE
= 10V T
A
=75°C
–25°C
25°C
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
0 2 4 6 8 10 15 20 25 30 35 40 45 50
T
A
= –25°C
25°C
75°C
25°C
T
A
= –25°C
75°C
V
O
= 0.2 V
I C , COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
Q2–8/8
MMUN2211RLT1 SERIES
TYPICAL APPLICA TIONS FOR NPN BRT s
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
Figure 23. Open Collector Inverter: Inverts
the Input Signal Figure 24. Inexpensive, Unregulated Current
Source
+12 V
IN
OUT
V
CC
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
LOAD
+12 V
