MMBT4403
FEATURES
PNP epitaxial silicon, planar design
Collector-emitter voltage VCE = -40V
Collector current IC =-600mA
Complimentary (NPN) device: MMBT4401
MECHANICAL DATA
Case: SOT-23
Terminals: Solderable per MIL-STD-750, Method 2026
Approx Weight: 0.008 grams
Marking: M3A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Collector - Emitter Voltage VCEO -40 V
Collector - Base Voltage VCBO -40 V
Emitter – Base Voltage VEBO -5.0 V
Collector Current - Continuous IC -600 mA
Max Power Dissipation (Note 1) PTOT 225 mW
Junction and Storage Temperature Range TJ, TSTG -55 to 150 ℃
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Thermal Resistance , Junction to Ambient (Note 1) RθJ A 556 ℃/W
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. using minimum recommended pad.
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE POWER40V 225m
W
2
Emitter
Top View
3
Collector
1
Base
2
Emitter
Top View
3
Collector
1
Base
BASE
3
COLLECTOR
EMITTER
2
1
BASE
3
COLLECTOR
EMITTER
BASE
3
COLLECTOR
EMITTER
2
1
PAGE .1
REV.0.1-MAR.5.2009
In compliance with EU RoHS 2002/95/EC directives
MMBT4403
ELECTRICAL CHARACTERISTICS (TJ = 25˚C, unless otherwise noted)
PARAMETER SYMBOL Test Condition MIN. TYP. MAX. UNIT
Collector - Emitter Breakdown Voltage V(BR)CEO IC=-1.0mA, IB=0 -40 - - V
Collector - Base Breakdown Voltage V(BR)CBO IC=-100uA, IE=0 -40 - - V
Emitter - Base Breakdown Voltage V(BR)EBO IE=-100uA, IC=0 -5.0 - - V
Base Cutoff Current IBEV V
CE=-35V, VEB=-0.4V - - -100 nA
Collector Cutoff Current ICEX V
CE=-35V, VEB=-0.4V - - -100 nA
DC Current Gain hFE
IC=-0.1mA, VCE=-1.0V
IC=-1.0mA, VCE=-1.0V
IC=-10mA, VCE=-1.0V
IC=-150mA, VCE=-2.0V
IC=-500mA, VCE=-2.0V
30
60
100
100
20
-
-
-
-
-
-
-
-
300
-
-
Collector - Emitter Saturation Voltage VCE(SAT) IC=-150mA, IB=-15 mA
IC=-500mA, IB=-50mA
-
-
-
-
-0.4
-0.75 V
Base - Emitter Saturation Voltage VBE(SAT) IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
-0.75
-
-
-
-0.95
-1.3 V
Current-Gain – Bandwidth Product fT IC=-20mA, VCE=-10V,
f=100MHz 200 - - MHz
Collector - Base Capacitance CCBO VCB=-5.0V, IE=0, f=1MHz - - 8.5 pF
Emitter - Base Capacitance CEBO VCB=-0.5V, IC=0, f=1MHz - - 30 pF
Delay Time td - - 15 ns
Rise Time tr
VCC=-30V, VBE=-2.0V,
IC=-150mA, IB1=-15mA - - 20 ns
Storage Time ts - - 225 ns
Fall Time tf
VCC=-30V, IC=-150mA,
IB1=IB2=15mA - - 30 ns
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Fig. 1. Turn-On Time Fig. 2. Turn-Off Time
CS< 10pF
200Ω
1.0KΩ
1N916
-30V
0+2V
10 to 100ns
Duty Cycle ~ 2.0%
-16V
< 2ns
CS< 10pF
200Ω
1.0KΩ
1N916
-30V
0+2V
10 to 100ns
Duty Cycle ~ 2.0%
-16V
< 2ns
CS< 10pF
200Ω
1.0KΩ
1N916
-30V
0
+14V
1 to 100us
Duty Cycle = 2.0%
-16V
<20ns
+4V
CS< 10pF
200Ω
1.0KΩ
1N916
-30V
0
+14V
1 to 100us
Duty Cycle = 2.0%
-16V
<20ns
+4V
REV.0.1-MAR.5.2009 PAGE .2
MMBT4403
ELECTRICAL CHARACTERISTICS CURVES
100
150
200
250
300
350
400
0.1 1 10 100 1000
Collector Current, I
C
(mA)
hF
E
T
J
= 25 ˚C
T
J
= 150 ˚C
T
J
= 100 ˚
C
V
CE
= 10V
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
0.1 1 10 100 1000
Collector Current, I
C
(mA)
V
BE
(on)
T
J
= 25˚C
T
J
= 100˚C
T
J
=150˚C
Fig. 3. Typical hFE vs Collector Current Fig. 4. Typical VBE vs Collector Current
0.000
0.050
0.100
0.150
0.200
0.250
0.300
0.350
0.400
0.450
0.500
0.1 1 10 100 1000
Collector Current, I
C
(mA)
V
CE
(sat)
T
J
= 25˚C
T
J
= 150˚C
I
C
/I
B
= 10
Fig. 5. Typical VCE (sat) vs Collector Current
1
10
100
0.1 1 10 100
Reverse Voltage (V)
Capacitance (pF
)
C
OB
(CB)
C
IB
(EB)
Fig. 6. Typical Capacitances vs Reverse Voltage
REV.0.1-MAR.5.2009 PAGE .3
PAGE . 4
REV.0.1-MAR.5.2009
MOUNTING P AD LA YOUT
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMA TION
LEGAL ST ATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
MMBT4403