H11C4M - Central Semiconductor Corp.

MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS

Isolation Voltage VISO 5000 VRMS

Isolation Resistance (@ VIO=500V) RISO 1011 Ω

Operating Temperature Range TJ-30 to +100 °C

Storage Temperature Range Tstg -55 to +125 °C

INPUT MAXIMUM RATINGS (LED): (TA=25°C) SYMBOL UNITS

Continuous Forward Current IF50 mA

Continuous Reverse Voltage VR5.0 V

Peak Forward Surge Current (tp=1μs) IFSM 1.0 A

Power Dissipation PD75 mW

OUTPUT MAXIMUM RATINGS (SCR): (TA=25°C) SYMBOL UNITS

Peak Repetitive Off-State Voltage VDRM,V

RRM 400 V

Peak Reverse Gate Voltage VRGM 6.0 V

RMS On-State Current IT(RMS) 150 mA

Peak On-State Current (tp=100μs) IT10 A

Peak One Cycle Surge (tp=10ms) ITSM 5.0 A

INPUT ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

IRVR=3.0V 10 μA

VFIF=10mA 1.5 V

CJVR=0V, f=1.0MHz 50 pF

H11C4M

PHOTO SCR OPTOCOUPLER

DIP-6 CASE

Central

Semiconductor Corp.

R2 (8-December 2008)

DESCRIPTION:

The Central Semiconductor H11C4M is a gallium-

arsenide infrared emitting Diode optically coupled

with a light activated silicon controlled rectifier in a

DIP-6 dual-in-line package. This device is designed

for applications requiring a high degree of isolation

between triggering and load circuits.

MARKING: H11C4M

APPLICATIONS:

• Communications equipment

• Solid state relays

• Portable equipment

• Low power logic circuits requiring

a high degree of input/output isolation

FEATURES:

• Forward current IF=50mA MAX (Input)

• On-State current IT(RMS)=150mA (Input)

• Reverse current IR=10μA MAX (Input)

• Blocking voltage VDRM,V

RRM=400V MAX (Output)

• Isolation test voltage 5000VRMS

Central

Semiconductor Corp.

H11C4M

PHOTO SCR OPTOCOUPLER

R2 (8-December 2008)

OUTPUT ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS TYP MAX UNITS

IDRM, IRRM VDRM,V

RRM=400V, RGK=10kΩ, TA=100°C 150 μA

VTM ITM=100mA 1.3 V

IGT VD=100V, RL=10kΩ 50 μA

VGT VD=100V, RL=10kΩ 1.0 V

IHIT=100mA, RGK=27kΩ 500 μA

COUPLER ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS TYP MAX UNITS

IFT VAK=50V, RGK=10kΩ 20 mA

IFT VAK=100V, RGK=27kΩ 11 mA

DIP-6 CASE - MECHANICAL OUTLINE

LEAD CODE:

1) ANODE (LED)

2) CATHODE (LED)

3) NO CONNECTION

4) CATHODE (SCR)

5) ANODE (SCR)

6) GATE (SCR)

MARKING: H11C4M