80V
80V
5V
4A
8A
80mA
50W
0.286 W/°C
–65 to 200°C
11/99
2N6295
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
VCEO Collector – Emitter Voltage
VCB Collector – Base Voltage
VEB Emitter – Base Voltage
ICCollector Current – Continuous
Peak
IBBase Current
PDTotal Power Dissipation at Tcase = 25°C
Derate above 25°C
Tj,Tstg,Operating and Storage Junction Temperature Range
24.33 (0.958)
24.43 (0.962)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max. 3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTOR
FEATURES
•LOWV
CE(SAT)
HIGH CURRENT
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 — Base PIN 2 — Emitter Case is Collector.
APPLICATIONS
GENERAL PURPOSE AMPLIFIER
LOW FREQUENCY SWITCHING
HAMMER DRIVER APPLICATIONS
MECHANICAL DATA
Dimensions in mm(inches)
TO–66
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction to Case 3.5 °C/W
V
mA
mA
mA
V
V
V
pF
Parameter Test Conditions Min. Typ. Max. Unit
80
0.5 0.5
5.0
2.0
750 18000
100 2.0
3.0
4.0
2.8
4.0
120
300
VCEO(sus)
ICEO
ICEX
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
|hfe|
Cob
hfe
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
2N6295
11/99
IC= 50mA IB= 0
IB= 0 VCE = 40V
VCE = Rated VCB VEB(off) =1 5V
Tc= 150°C
IC= 0 VBE = 5V
IC= 2A VCE = 3V
IC= 4A VCE = 3V
IC= 2A IB= 8.0mA
IC= 4A IB= 40mA
IC= 4A IB= 40mA
IC= 2A VCE = 3V
IC= 1.5A VCE = 3V
f =1.0 MHz
VCB = 10V IE= 0
f =0.1 MHz
IC= 1.5A VCE = 3.0V
f =1.0 KHz
Collector - Emitter Sustaining
Voltage
Collector Cut-off Current
Collector – Emitter Cut-off
Current
Emitter Cut-off Current
DC Current Gain
Collector – Emitter
Saturation Voltage
Base – Emitter Saturation
Voltage
Base – Emitter On Voltage
Magnitude of Common Emitter
Small Signal Short Circuit
Forward current Transfer Ratio
Output Capacitance
Small Signal Current Gain
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
*Pulse test tp =300µs δ ≤ 2%
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS