6-1
Semiconductor
Features
• -5.5A and -6.5A, -150V and -200V
•r
DS(ON) = 0.8Ω and 1.2Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These devices are P-Channel enhancement mode silicon
gate power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly Developmental type TA17512.
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER PACKAGE BRAND
IRF9230 TO-204AA IRF9230
IRF9231 TO-204AA IRF9231
IRF9232 TO-204AA IRF9232
IRF9233 TO-204AA IRF9233
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
January 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997 File Number 2226.1
IRF9230, IRF9231,
IRF9232, IRF9233
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm,
P-Channel Power MOSFETs
6-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF9230 IRF9231 IRF9232 IRF9233 UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . VDS -200 -150 -200 -150 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . VDGRVGS -200 -150 -200 -150 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID-6.5
-4.0 -6.5
-4.0 -5.5
-3.5 -5.5
-3.5 A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . .IDM -26 -26 -22 -22 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD75 75 75 75 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.6 0.6 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . EAS 500 500 500 500 mJ
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg 300
260 300
260 300
260 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V, (Figure10)
IRF9230, IRF9232 -200 - - V
IRF9231, IRF9233 -150 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V
TC = 125oC- - -250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V,
(Figure 7)
IRF9230, IRF9231 -6.5 - - A
IRF9232, IRF9233 -5.5 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = -3.5A, VGS = -10V, (Figures 8, 9)
IRF9230, IRF9231 - 0.5 0.8 Ω
IRF9232, IRF9233 - 0.8 1.2 Ω
Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON) MAX, ID = -3.5A,
(Figure 12) 2.2 3.5 - S
Turn-On Delay Time td(ON) VDD = 0.5 x Rated BVDSS, ID≈ -6.5A,
RG = 50Ω, VGS = -10V, (Figure 17, 18)
RL = 14.7Ω for VDSS = 200V
RL = 10.9Ω for VDSS = 150V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-3050ns
Rise Time tr- 50 100 ns
Turn-Off Delay Time td(OFF) - 50 100 ns
Fall Time tf-4080ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated
BVDSS, (Figures 14, 19, 20)
Gate Charge is Essentially Independent
of Operating Temperature
-3145nC
Gate to Source Charge Qgs -18- nC
Gate to Drain “Miller” Charge Qgd -13- nC
IRF9230, IRF9231, IRF9232, IRF9233
6-3
Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11) - 550 - pF
Output Capacitance COSS - 170 - pF
Reverse Transfer Capacitance CRSS -50- pF
Internal Drain Inductance LD Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 5.0 - nH
Internal Source Inductance LSMeasured From the
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
- 12.5 - nH
Thermal Resistance Junction to Case RθJC - - 1.67 oC/W
Thermal Resistance
Junction to Ambient RθJA Typical Socket Mount - - 60 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
- - -6.5 A
Pulse Source to Drain Current
(Note 3) ISDM - - -26 A
Source to Drain Diode Voltage
(Note 2) VSD TC = 25oC, ISD = -6.5A, VGS = 0V,
(Figure 13) - - -1.5 V
Reverse Recovery Time trr TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs - 400 - ns
Reverse Recovery Charge QRR TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs - 2.6 - µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ= 25oC, L = 17.75mH, RG= 25Ω, peak IAS = 6.5A (Figures 15, 16).
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
LS
LD
G
D
S
G
D
S
IRF9230, IRF9231, IRF9232, IRF9233
6-4
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED PO WER DISSIPA TION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
TA, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.0 0 25 50 75 100 150
0.2
0.4
0.6
0.8
1.0
1.2
125 050 100
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
150
25 75 125
-10
-8
-6
-4
-2
IRF9230, IRF9231
IRF9232, IRF9233
10
t1, RECTANGULAR PULSE DURATION (s)
ZθJC, NORMALIZED TRANSIENT
THERMAL IMPEDANCE (oC/W)
10-3 10-2
1
10-5 10-4
0.01
0.1
10-1 1
SINGLE PULSE
0.1
0.02
0.2
0.5
0.01
0.05
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
t1
t2
VDS, DRAIN TO SOURCE VOLTAGE (V)
-10
ID, DRAIN CURRENT (A)
-100
-100
-1
-10-1
-0.1 -1000
10µs
100µs
1ms
10ms
100ms
DC
TJ = MAX RATED
TC = 25oC
OPERATION IN THIS AREA
IS LIMITED BY rDS(ON)
IRF9230, 1
IRF9230, 1
IRF9232, 3
IRF9232, 3
IRF9231, 3 IRF9230, 2
ID, DRAIN CURRENT (A)
0 -10 -20 -30 -40
-3
-6
-9
-12
-15
-50
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
VGS = -4V
VGS = -6V
VGS = -7V
VGS = -9V
VGS = -8V
VGS = -10V 80µs PULSE TEST
VGS = -5V
IRF9230, IRF9231, IRF9232, IRF9233
6-5
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN T O SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN T O SOURCE BREAKDO WN
VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
-3
0-2 -4 -6 -10
-6
-9
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
-12
-8
-15
VGS = -10V
80µsPULSE TEST
VGS = -9V
VGS = -8V
VGS = -7V
VGS = -6V
VGS = -5V
VGS = -4V
-15
-12
-9
-6
-3
00 -2-4 -6-8-10
V
GS, GATE TO SOURCE VOLTAGE (V)
80µs PULSE TEST
VDS ≥ID(ON) x rDS(ON) MAX
ID(ON), ON-STATE DRAIN CURRENT (A)
TJ = 125oC
TJ = 25oC
TJ = -55oC
0
1.2
-5 -10 -15 -20
DRAIN TO SOURCE ON RESISTANCE (Ω)
ID, DRAIN CURRENT (A) -25
1.6
0
0.4
0.8
VGS = -20V
2.0µs PULSE TEST
2.0
VGS = -10V
NORMALIZED DRAIN TO SOURCE
2.5
1.5
1.0
0.5
0
-40 0 40
TJ, JUNCTION TEMPERATURE (oC)
120
2.0
80
VGS = -10V, ID = -2.0A
160
ON RESISTANCE
1.25
0.95
0.85
0.75
-40 0 40
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
80 120 160
1.05
1.15
ID= 250µA2000
400
00-20 -50
C, CAPACITANCE (pF)
1200
VDS, DRAIN TO SOURCE VOLTAGE (V)
1600
800 CISS
COSS
CRSS
-10 -30 -40
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
VGS = 0V, f = 1MHz
IRF9230, IRF9231, IRF9232, IRF9233
6-6
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
ID, DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE (S)
0 -3 -6 -9 -12
1.4
2.8
4.2
5.6
7.0
-15
TJ = 125oC
TJ = 25oC
TJ = -55oC
0
VDS > ID(ON) x rDS(ON)MAX
80µs PULSE TEST
-0.4 -1.0 -1.2 -1.6 -1.8-0.6 VSD, SOURCE TO DRAIN VOLTAGE (V)
-0.8 -1.4
-0.1
-1.0
-10
ISD, DRAIN CURRENT (A)
-100
TJ = 25oC
TJ = 150oC
0
-5
-10
-15
0 8 16243240
V
DS = -160V
VDS = -100V
VDS = -40V
ID = -6.5A
FOR TEST CIRCUIT
SEE FIGURES 19, 20
Qg(TOT), TOTAL GATE CHARGE (nC)
VGS, GATE TO SOURCE VOLTAGE (V)
IRF9230, IRF9232
IRF9230, IRF9231, IRF9232, IRF9233
6-7
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
tP
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
td(ON)
tr
90%
10%
VDS 90%
tf
td(OFF)
tOFF
90%
50%
50%
10%
PULSE WIDTH
VGS
tON
10%
0
0
0.3µF
12V
BATTERY 50kΩ
+VDS
S
DUT
D
G
IG(REF)
0
(ISOLATED
-VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
DUT
Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
0
IG(REF)
IRF9230, IRF9231, IRF9232, IRF9233
