SMF5.0A thru SMF188A
Vishay Semiconductors
for merly General Semiconductor
Document Number 88433 www.vishay.com
12-Sep-02 1
New Product
Surface Mount TransZorb®
Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V
Peak Pulse Power
1000W (8/20ms pulse)
200W (10/1000ms pulse)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Peak pulse power dissipation with a 10/1000µs waveform(1) PPPM 200 W
8/20µs wavefor m 1000
Peak pulse current with a 10/1000µs waveform(1) IPPM See Next Table A
Peak forward surge current 8.3ms single half sine-wave IFSM 20 A
uni-directional only
Operating junction and storage temperature range TJ, TSTG – 55 to +150 °C
Note: (1) Non-repetitive current pulse and derated above TA = 25°
Rating is 150W (10/1000µs pulse) above 78V
Detail
Z
enlarged
0.00 – 0.10
Top View
1.0 ± 0.2
1.8 ± 0.1
2.8 ± 0.1
0.98 ± 0.1 0.05 - 0.30
3.7 ± 0.2
0.60 ± 0.25
5°
5°
Z
Cathode Band
Dimensions in
millimeters
DO-219 (SMF)
Features
• For surface mounted applications.
• Low-profile package
• Optimized for LAN protection applications
• Ideal for ESD protection of data lines in accordance
with IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in accor-
dance with IEC 1000-4-4 (IEC801-4)
• Glass passivated junction
• Low incremental surge resistance, excellent
clamping capability
• 200W peak pulse power capability with a 10/1000µs
wavefor m, repetition rate (duty cycle): 0.01%
(150W above 78V)
• Very fast response time
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mechanical Data
Case: Low-profile plastic case
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position: Any
Weight: approx. 0.01g
Packaging codes-options:
G1-10K per 13”reel (8mm tape), 50K/box
G2-3K per 7”reel (8mm tape), 30K/box
Mounting Pad Layout
Patented
1.6 1.2
1.2
SMF5.0A thru SMF188A
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88433
212-Sep-02
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF= 3.5V at IF= 12A (uni-directional only)
Breakdown Maximum Maximum Maximum
Device Voltage at ITTest Stand-off Reverse Leakage Peak Pulse Surge Clamping
Marking V(BR) (V) Current Voltage at VWM Current IPPM Voltage at IPPM
Device Type Code Min(1) IT(mA) VWM (V) ID (µA) (A) (2,3) VC(V)
SMF5.0A AE 6.40 10 5.0 400 16.3 9.2
SMF6.0A AG 6.67 10 6.0 400 14.6 10.3
SMF6.5A AK 7.22 10 6.5 250 13.4 11.2
SMF7.0A AM 7.78 10 7.0 100 12.5 12.0
SMF7.5A AP 8.33 1.0 7.5 50 11.6 12.9
SMF8.0A AR 8.89 1.0 8.0 25 11.0 13.6
SMF8.5A AT 9.44 1.0 8.5 10 10.4 14.4
SMF9.0A AV 10.0 1.0 9.0 5.0 9.7 15.4
SMF10A AX 11.1 1.0 10 2.5 8.8 17.0
SMF11A AZ 12.2 1'0 11 2.5 8.2 18.2
SMF12A BE 13.3 1.0 12 2.5 7.5 19.9
SMF13A BG 14.4 1.0 13 1.0 7.0 21.5
SMF14A BK 15.6 1.0 14 1.0 6.5 23.2
SMF15A BM 16.7 1.0 15 1.0 6.1 24.4
SMF16A BP 17.8 1.0 16 1.0 5.8 26.0
SMF17A BR 18.9 1.0 17 1.0 5.4 27.6
SMF18A BT 20.0 1.0 18 1.0 5.1 29.2
SMF20A BV 22.2 1.0 20 1.0 4.6 32.4
SMF22A BX 24.4 1.0 22 1.0 4.2 35.5
SMF24A BZ 26.7 1.0 24 1.0 3.9 38.9
SMF26A CE 28.9 1.0 26 1.0 3.6 42.1
SMF28A CG 31.1 1.0 28 1.0 3.3 45.4
SMF30A CK 33.3 1.0 30 1.0 3.1 48.4
SMF33A CM 36.7 1.0 33 1.0 2.8 53.3
SMF36A CP 40.0 1.0 36 1.0 2.6 58.1
SMF40A CR 44.4 1.0 40 1.0 2.3 64.5
SMF43A CT 47.8 1.0 43 1.0 2.2 69.4
SMF45A CV 50.0 1.0 45 1.0 2.1 72.7
SMF48A CX 53.3 1.0 48 1.0 1.9 77.4
SMF51A CZ 56.7 1.0 51 1.0 1.8 82.4
Notes: (1) V(BR) measured after ITapplied for 300µs square wave pulse or equivalent
(2) Surge current waveform: 10/1000µs
(3) SMF78A and below can withstand higher currents (to 200W for10/1000µs pulse), but VCmust be increased by approximately 5% (Ipp = 200W/VC)
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
SMF5.0A thru SMF188A
Vishay Semiconductors
for merly General Semiconductor
Document Number 88433 www.vishay.com
12-Sep-02 3
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF= 3.5V at IF= 12A (uni-directional only)
Breakdown Maximum Maximum Maximum
Device Voltage Test Stand-off Reverse Leakage Peak Pulse Surge Clamping
Marking V(BR) (V) Current Voltage at VWM Current IPPM Voltage at IPPM
Device Type Code (Min)(1) at IT(mA) VWM (V) ID (µA) (A) (2,3) VC(V)
SMF54A RE 60.0 1.0 54 1.0 1.7 87.1
SMF58A RG 64.4 1.0 58 1.0 1.6 93.6
SMF60A RK 66.7 1.0 60 1.0 1.5 96.8
SMF64A RM 71.1 1.0 64 1.0 1.5 103
SMF70A RP 77.8 1.0 70 1.0 1.3 113
SMF75A RR 83.3 1.0 75 1.0 1.2 121
SMF78A RT 86.7 1.0 78 1.0 1.2 126
SMF85A RV 94.4 1.0 85 1.0 1.1 137
SMF90A RX 100 1.0 90 1.0 1.0 146
SMF100A RZ 111 1.0 100 1.0 0.9 162
SMF110A SE 122 1.0 110 1.0 0.8 177
SMF120A SG 133 1.0 120 1.0 0.8 193
SMF130A SK 144 1.0 130 1.0 0.7 209
SMF150A SM 167 1.0 150 1.0 0.6 243
SMF160A SP 178 1.0 160 1.0 0.6 259
SMF170A SR 189 1.0 170 1.0 0.5 275
SMF188A SS 209 1.0 188 1.0 0.5 328
Notes: (1) V(BR) measured after ITapplied for 300µs square wave pulse or equivalent
(2) Surge current waveform: 10/1000µs
(3) SMF78A and below can withstand higher currents (to 250W for10/1000µs pulse), but VCmust be increased by approximately 5% (Ipp = 250W/VC)
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
