SMF5.0A thru SMF188A New Product Vishay Semiconductors formerly General Semiconductor Surface Mount TransZorb(R) Transient Voltage Suppressors d e t n e t a P DO-219 (SMF) Cathode Band Top View Stand-off Voltage 5.0 to 188V Peak Pulse Power 1000W (8/20ms pulse) 200W (10/1000ms pulse) Mounting Pad Layout 1.6 1.8 0.1 1.2 1.0 0.2 1.2 Dimensions in millimeters 2.8 0.1 5 0.05 - 0.30 0.98 0.1 5 Detail Z enlarged Z 0.60 0.25 Features * * * * 0.00 - 0.10 3.7 0.2 Mechanical Data Case: Low-profile plastic case Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: The band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: approx. 0.01g Packaging codes-options: G1-10K per 13" reel (8mm tape), 50K/box G2-3K per 7" reel (8mm tape), 30K/box For surface mounted applications. Low-profile package Optimized for LAN protection applications Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2) * Ideal for EFT protection of data lines in accordance with IEC 1000-4-4 (IEC801-4) * Glass passivated junction * Low incremental surge resistance, excellent clamping capability * 200W peak pulse power capability with a 10/1000s waveform, repetition rate (duty cycle): 0.01% (150W above 78V) * Very fast response time * High temperature soldering guaranteed: 250C/10 seconds at terminals Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol Value Unit Peak pulse power dissipation with a 10/1000s waveform 8/20s waveform PPPM 200 1000 W Peak pulse current with a 10/1000s waveform(1) IPPM See Next Table A Peak forward surge current 8.3ms single half sine-wave uni-directional only IFSM 20 A TJ, TSTG -55 to +150 C (1) Operating junction and storage temperature range Note: (1) Non-repetitive current pulse and derated above TA = 25 Rating is 150W (10/1000s pulse) above 78V Document Number 88433 12-Sep-02 www.vishay.com 1 SMF5.0A thru SMF188A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. V F = 3.5V at IF = 12A (uni-directional only) Device Marking Code Breakdown Voltage at IT V(BR) (V) Min(1) Test Current IT (mA) Stand-off Voltage VWM (V) SMF5.0A AE 6.40 10 5.0 400 16.3 9.2 SMF6.0A AG 6.67 10 6.0 400 14.6 10.3 SMF6.5A AK 7.22 10 6.5 250 13.4 11.2 SMF7.0A AM 7.78 10 7.0 100 12.5 12.0 SMF7.5A AP 8.33 1.0 7.5 50 11.6 12.9 SMF8.0A AR 8.89 1.0 8.0 25 11.0 13.6 SMF8.5A AT 9.44 1.0 8.5 10 10.4 14.4 SMF9.0A AV 10.0 1.0 9.0 5.0 9.7 15.4 SMF10A AX 11.1 1.0 10 2.5 8.8 17.0 SMF11A AZ 12.2 1'0 11 2.5 8.2 18.2 SMF12A BE 13.3 1.0 12 2.5 7.5 19.9 SMF13A BG 14.4 1.0 13 1.0 7.0 21.5 SMF14A BK 15.6 1.0 14 1.0 6.5 23.2 SMF15A BM 16.7 1.0 15 1.0 6.1 24.4 SMF16A BP 17.8 1.0 16 1.0 5.8 26.0 SMF17A BR 18.9 1.0 17 1.0 5.4 27.6 SMF18A BT 20.0 1.0 18 1.0 5.1 29.2 SMF20A BV 22.2 1.0 20 1.0 4.6 32.4 SMF22A BX 24.4 1.0 22 1.0 4.2 35.5 SMF24A BZ 26.7 1.0 24 1.0 3.9 38.9 SMF26A CE 28.9 1.0 26 1.0 3.6 42.1 SMF28A CG 31.1 1.0 28 1.0 3.3 45.4 SMF30A CK 33.3 1.0 30 1.0 3.1 48.4 SMF33A CM 36.7 1.0 33 1.0 2.8 53.3 SMF36A CP 40.0 1.0 36 1.0 2.6 58.1 SMF40A CR 44.4 1.0 40 1.0 2.3 64.5 SMF43A CT 47.8 1.0 43 1.0 2.2 69.4 SMF45A CV 50.0 1.0 45 1.0 2.1 72.7 SMF48A CX 53.3 1.0 48 1.0 1.9 77.4 SMF51A CZ 56.7 1.0 51 1.0 1.8 82.4 Device Type Maximum Maximum Reverse Leakage Peak Pulse Surge at VWM Current IPPM ID (A) (A) (2,3) Maximum Clamping Voltage at IPPM VC (V) Notes: (1) V(BR) measured after IT applied for 300s square wave pulse or equivalent (2) Surge current waveform: 10/1000s (3) SMF78A and below can withstand higher currents (to 200W for10/1000s pulse), but VC must be increased by approximately 5% (Ipp = 200W/VC) (4) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 Document Number 88433 12-Sep-02 SMF5.0A thru SMF188A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. V F = 3.5V at IF = 12A (uni-directional only) Device Marking Code Breakdown Voltage V(BR) (V) (1) (Min) Test Current at IT (mA) Stand-off Voltage VWM (V) SMF54A RE 60.0 1.0 54 1.0 1.7 87.1 SMF58A RG 64.4 1.0 58 1.0 1.6 93.6 SMF60A RK 66.7 1.0 60 1.0 1.5 96.8 SMF64A RM 71.1 1.0 64 1.0 1.5 103 SMF70A RP 77.8 1.0 70 1.0 1.3 113 SMF75A RR 83.3 1.0 75 1.0 1.2 121 SMF78A RT 86.7 1.0 78 1.0 1.2 126 SMF85A RV 94.4 1.0 85 1.0 1.1 137 SMF90A RX 100 1.0 90 1.0 1.0 146 SMF100A RZ 111 1.0 100 1.0 0.9 162 SMF110A SE 122 1.0 110 1.0 0.8 177 SMF120A SG 133 1.0 120 1.0 0.8 193 SMF130A SK 144 1.0 130 1.0 0.7 209 SMF150A SM 167 1.0 150 1.0 0.6 243 SMF160A SP 178 1.0 160 1.0 0.6 259 SMF170A SR 189 1.0 170 1.0 0.5 275 SMF188A SS 209 1.0 188 1.0 0.5 328 Device Type Maximum Maximum Reverse Leakage Peak Pulse Surge at VWM Current IPPM ID (A) (A) (2,3) Maximum Clamping Voltage at IPPM VC (V) Notes: (1) V(BR) measured after IT applied for 300s square wave pulse or equivalent (2) Surge current waveform: 10/1000s (3) SMF78A and below can withstand higher currents (to 250W for10/1000s pulse), but VC must be increased by approximately 5% (Ipp = 250W/VC) (4) All terms and symbols are consistent with ANSI/IEEE C62.35 Document Number 88433 12-Sep-02 www.vishay.com 3