MJE5852 - ON Semiconductor

January, 2015 − Rev. 7 1Publication Order Number:

MJE5850/D

MJE5850, MJE5851,

MJE5852

Switch-mode Series PNP

Silicon Power Transistors

The MJE5850, MJE5851 and the MJE5852 transistors are designed

for high−voltage, high−speed, power switching in inductive circuits

where fall time is critical. They are particularly suited for line operated

switch−mode applications.

Features

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Motor Controls

•Deflection Circuits

•Fast Turn−Off Times

•Operating Temperature Range −65 to +150_C

•100_C Performance Specified for:

♦Reversed Biased SOA with Inductive Loads

♦Switching Times with Inductive Loads

♦Saturation Voltages

♦Leakage Currents

•Complementary to the MJE13007 Series

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MJE5850

MJE5851

MJE5852

VCEO(sus) 300

350

400

Vdc

Collector−Emitter Voltage

MJE5850

MJE5851

MJE5852

VCEV 350

400

450

Vdc

Emitter Base Voltage VEB 6.0 Vdc

Collector Current − Continuous (Note 1) IC8.0 Adc

Collector Current − Peak (Note 1) ICM 16 Adc

Base Current − Continuous (Note 1) IB4.0 Adc

Base Current − Peak (Note 1) IBM 8.0 Adc

Total Power Dissipation

@ TC = 25_C

Derate above 25_C

PD80

0.640 W

W/_C

Operating and Storage Junction

Temperature Range TJ, Tstg –65 to 150 _C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

8 AMPERE

PCP SILICON

POWER TRANSISTORS

300−350−400 VOLTS

80 WATTS

TO−220

CASE 221A−09

STYLE 1

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MARKING DIAGRAM

MJE585x = Device Code

x = 0, 1, or 2

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MJE585xG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION

BASE

EMITTER

COLLECTOR

2, 4

MJE5850, MJE5851, MJE5852

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THERMAL CHARACTERISTICS

Rating Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.25 _C/W

Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL275 _C

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 10 mA, IB = 0)

MJE5850

MJE5851

MJE5852

VCEO(sus)

300

350

400

−

Vdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)

ICEV −

−−

−0.5

2.5

mAdc

Collector Cutoff Current

(VCE = Rated VCEV, RBE = 50 W, TC = 100_C) ICER − − 3.0 mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0) IEBO − − 1.0 mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased IS/b See Figure 12

Clamped Inductive SOA with base reverse biased RBSOA See Figure 13

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 2.0 Adc, VCE = 5 Vdc)

(IC = 5.0 Adc, VCE = 5 Vdc)

hFE 15

5−

−−

−

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 1.0 Adc)

(IC = 8.0 Adc, IB = 3.0 Adc)

(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)

VCE(sat) −

−

2.0

5.0

2.5

Vdc

Base−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 1.0 Adc)

(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)

VBE(sat) −

−−

−1.5

1.5

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) Cob − 270 − pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,

tp = 50 ms, Duty Cycle ≤ 2%) td− 0.025 0.1 ms

Rise Time tr− 0.100 0.5 ms

Storage Time (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,

VBE(off) = 5 Vdc, tp = 50 ms, Duty Cycle ≤ 2%) ts− 0.60 2.0 ms

Fall Time tf− 0.11 0.5 ms

Inductive Load, Clamped (Table 1)

Storage Time (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,

VBE(off) = 5 Vdc, TC = 100_C) tsv − 0.8 3.0 ms

Crossover Time tc− 0.4 1.5 ms

Fall Time tfi − 0.1 − ms

Storage Time (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,

VBE(off) = 5 Vdc, TC = 25_C) tsv − 0.5 − ms

Crossover Time tc− 0.125 − ms

Fall Time tfi − 0.1 − ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: PW = 300 ms. Duty Cycle ≤ 2%

MJE5850, MJE5851, MJE5852

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C, CAPACITANCE (pF)

IC, COLLECTOR CURRENT (nA)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPS)IC, COLLECTOR CURRENT (AMPS)

1.2

2.0

0.8

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

2.0 0.3 0.7 5.0 10

3.0

Figure 2. Collector Saturation Region

0.01

IB, BASE CURRENT (AMPS)

0.02 0.05

1.2

0.4

100

hFE, DC CURRENT GAIN

0.1 0.2 0.5 10

Figure 3. Collector−Emitter Saturation Voltage Figure 4. Base−Emitter Voltage

Figure 5. Collector Cutoff Region

2.0

0.8

105

VBE, BASE-EMITTER VOLTAGE (VOLTS)

100

TJ = 150°C

0.5 2.0

-0.4

Figure 6. Capacitance

3000

VR, REVERSE VOLTAGE (VOLTS)

Cib

0.1

104

103

102

101

+0.2 +0.1

100°C

REVERSE FORWARD

25°C

VCE = 200 V

200

100

20 500 1000

1.6

0.4

TJ = 25°CIC = 0.25 A

5.0

0.1 1.0 3.0 7.0

0.2 1.0 7.00.5 100.1 0.3 3.02.0 5.0

7.0

2000

1000

500

20010050105.01.00.50.2

V, VOLTAGE (VOLTS)

200

-0.3-0.2 -0.5-0.1

VCE = 5 V

1.0 A

1.0 2.0 5.0

1.6

IC/IB = 4

1.2

2.0

0.8

0.4

0.2 1.0 7.00.5 100.1 0.3 3.02.0 5.0

1.6

0.2

0.70.7

2.5 A 5.0 A

TJ = 25°C

TJ = 150°C

TJ = 25°C

IC/IB = 4

TJ = 150°C

TJ = 25°C

TJ = 150°C

Cob

TJ = 25°C

TYPICAL ELECTRICAL CHARACTERISTICS

MJE5850, MJE5851, MJE5852

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IN

PUT

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1 W

1N4937

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

PW Varied to Attain

IC = 100 mA

-10 V

ICM tf

Clamped

Vclamp

TIM

VCEM

TUT

VCC

t1 Adjusted to

Obtain IC

Test Equipment

Scope — Tektronix

475 or Equivalent

t1 ≈Lcoil (ICM)

VCC

t2 ≈Lcoil (ICM)

VClamp

VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

INPUT

CONDITIONS

CIRCUIT

VALUES

TEST CIRCUITS

−V adjusted to obtain desired IB1

+V adjusted to obtain desired VBE(off)

+ V

50 W

2 W

INPUT

0.2 mF

0.0025 mF

0.1 mF

500 W

1/2 W

500 W

0.0033 mF

500 W

1/2 W

+ V

50 mF

0.1 mF

MJE15029

1 W 2

MJE15028

50 mF

- V

1/2 W

1N4934

0.1 mF

500 W

1/2 W

0.2 mF

IB1 adjusted to

obtain the forced

hFE desired

TURN−OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

IB1

TURN−ON TIME

Lcoil = 80 mH, VCC = 10 V

Rcoil = 0.7 W

Lcoil = 180 mH

Rcoil = 0.05 W

VCC = 20 V

VCC = 250 V

RL = 62 W

Pulse Width = 10

INDUCTIVE TEST CIRCUIT RESISTIVE TEST CIRCUITOUTPUT WAVEFORMS

Vclamp = 250 V

RB adjusted to attain desired IB1

VCE

Table 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE

, CROSSOVER TIME (tcμs)

tti

Figure 7. Inductive Switching Measurements

TIME

VCE

90% IB1

tsr

10%

VCEM

Figure 8. Inductive Switching Times

IC = 4 A

IC/IB = 4

TJ = 25°C

tc 100°C

tsv 100°Ctsv 25°C

tc 25°C

VBE, BASE-EMITTER VOLTAGE (VOLTS)

0.4

0.2

1.0

0.6

0.8

368057214

tsv, VOLTAGE STORAGE TIME (μs)

0.9

0.3

2.7

1.5

2.1

1.2

0.6

3.0

1.8

2.4

10%

ICM

trv

tfi

90%

ICM

ICM VCEM

Vclamp

MJE5850, MJE5851, MJE5852

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SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times

have been defined and apply to both current and voltage

waveforms since they are in phase. However, for inductive

loads which are common to SWITCHMODE power

supplies and hammer drivers, current and voltage

waveforms are not in phase. Therefore, separate

measurements must be made on each waveform to

determine the total switching time. For this reason, the

following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% VCEM

trv = Voltage Rise Time, 10−90% VCEM

tfi = Current Fall Time, 90−10% ICM

tti = Current Tail, 10−2% ICM

tc = Crossover Time,10% VCEM to 10% ICM

An enlarged portion of the inductive switching waveform

is shown in Figure 7 to aid on the visual identity of these

terms.

For the designer, there is minimal switching loss during

storage time and the predominant switching power losses

occur during the crossover interval and can be obtained

using the standard equation from AN−222A:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi ] tc. However, at lower test currents

this relationship may not be valid.

As is common with most switching transistors, resistive

switching is specified at 2 5°C and has become a benchmark

for designers. However, for designers of high frequency

converter circuits, the user oriented specifications which

make this a “SWITCHMODE” transistor are the inductive

switching speeds (tc and tsv) which are guaranteed at 100_C.

t, TIME (s)μ

t, TIME (ms)

0.01

0.7

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.05 1 2 5 10 20 50 100 200 500

ZqJC(t) = r(t) RqJC

RqJC = 1.25°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.01

SINGLE PULSE

0.1

0.1 0.50.2

(NORMALIZED)

1 k

0.5

0.3

0.07

0.03

0.02

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Turn−On Switching Times Figure 10. Turn−Off Switching Time

0.1

0.3

0.2

0.4

Figure 11. Typical Thermal Response [Zq

(t)]

0.02

0.01

1.0

0.7

0.3

0.2

0.5

0.1

IC, COLLECTOR CURRENT (AMPS)

0.7 3.0 102.0 5.00.1 1.0 7.0

VCC = 250 V

IC/IB = 4

TJ = 25°C

0.5

0.03

0.05

0.07

0.7

VCC = 250 V

IC/IB = 4

VBE(off) = 5 V

TJ = 25°C

0.30.2 0.7 4.0 100.1 2.0 7.00.50.3 1.0

t, TIME (s)μ

0.02

0.05

MJE5850, MJE5851, MJE5852

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The Safe Operating Area figures shown in Figures 12 and 13 are

specified for these devices under the test conditions shown.

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

7.0

1.0

100 300 500

3.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

5 ms

100 ms

7.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.05

10 400

5.0

2.0

1.0

0.2

0.1

BONDING WIRE LIMIT

THERMAL LIMIT

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

20 40 70 100

Figure 12. Maximum Forward Bias

Safe Operating Area

TC =

25°C

Figure 13. RBSOA, Maximum Reverse Bias

Safe Operating Area

0.5

0.02

300

200 400

500

IC/IB = 4

VBE(off) = 2 V to 8 V

TJ = 100°C

MJE5850

MJE5851

MJE5852

8.0

2.0

4.0

6.0

MJE5850

MJE5851

MJE5852

200

1 ms

Safe Operating Area Information

Forward Bias

There are two limitations on the power handling ability of

a transistor average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 12 is based on TC = 25_C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated when TC ≥ 25_C. Second breakdown limitations do

not derate the same as thermal limitations. Allowable

current at the voltages shown on Figure 12 may be found at

any case temperature by using the appropriate curve on

Figure 15.

TJ(pk) may be calculated from the data in Figure 11. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

Reverse Bias

For inductive loads, high voltage and high current must be

sustained simultaneously during turn−off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished b y several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage−current condition allowable

during reverse biased turn−off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 13 gives the RBSOA

characteristics.

Figure 14. Peak Reverse Base Current Figure 15. Forward Bias Power Derating

IC = 4 A

IB1 = 1 A

TJ = 25°C

TC, CASE TEMPERATURE (°C)

040 120 160

0.6

POWER DERATING FACTOR

SECOND BREAKDOWN

DERATING

0.8

0.4

0.2

60 100 14080

THERMAL

DERATING

200

1.0 268

2.5

3.5

3.0

2.0

1.5

VBE(off), BASE-EMITTER VOLTAGE (VOLTS)

IB2(pk)

(AMPS)

MJE5850, MJE5851, MJE5852

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ORDERING INFORMATION

Device Package Shipping

MJE5850G TO−220

(Pb−Free) 50 Units / Rail

MJE5851G TO−220

(Pb−Free) 50 Units / Rail

MJE5852G TO−220

(Pb−Free) 50 Units / Rail

MJE5850, MJE5851, MJE5852

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PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AH

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.415 9.66 10.53

C0.160 0.190 4.07 4.83

D0.025 0.038 0.64 0.96

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.024 0.36 0.61

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

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Phone: 81−3−5817−1050

MJE5850/D

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