SHANGHAI SUNRISE ELECTRONICS CO., LTD. US2AA THRU US2MA SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 50 TO 1000V CURRENT: 2.0A FEATURES SMA/DO-214AC * Ideal for surface mount pick and place application * Low profile package * Built-in strain relief * High surge capability * Glass passivated chip * Ultra fast recovery for high efficiency * High temperature soldering guaranteed: 260oC/10sec/at terminal B A C D F G MECHANICAL DATA A B MAX. .110(2.79) .177(4.50) MIN. .100(2.54) .157(3.99) E F MAX. .208(5.28) .090(2.29) MIN. .194(4.93) .078(1.98) * Terminal: Plated leads solderable per MIL-STD 202E, method 208C * Case: Molded with UL-94 Class V-O recognized flame retardant epoxy * Polarity: Color band denotes cathode H C D .058(1.47) .012(0.305) .052(1.32) .006(0.152) G H .008(0.203) .060(1.52) .004(0.102) .030(0.76) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS SYMBOL US2 US2 US2 US2 US2 US2 US2 UNITS AA BA DA GA JA KA MA 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V VRRM Maximum Repetitive Peak Reverse Voltage VRMS Maximum RMS Voltage VDC Maximum DC Blocking Voltage Maximum Average Forward Rectified Current IF(AV) 2.0 (TL=90oC) Peak Forward Surge Current (8.3ms single IFSM 50 half sine-wave superimposed on rated load) Maximum Instantaneous Forward Voltage VF 1.0 1.4 (at rated forward current) 5.0 Maximum DC Reverse Current Ta=25oC IR o 350 (at rated DC blocking voltage) Ta=100 C 50 Maximum Reverse Recovery Time (Note 1) trr 25 CJ Typical Junction Capacitance (Note 2) 20 R(ja) Typical Thermal Resistance (Note 3) -50 to +150 TSTG,TJ Storage and Operation Junction Temperature Note: 1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A. 2.Measured at 1.0 MHz and applied voltage of 4.0Vdc 3.Thermal resistance from junction to terminal mounted on 5x5mm copper pad area A A 1.7 V A A nS pF 75 o C/W o C http://www.sse-diode.com