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TO SHIBA T r ansistor Silicon PNP Epitaxial ( PC T process)
2SA1298
Low Frequency Power Amplifier Application
Power Switching Applications
· High DC current gain: hFE = 100~320
· Low saturation voltage: VCE (sat) = −0.4 V (max)
(IC = −500 mA, IB = −20 mA)
· Suitable for driver stage of small motor
· Complementary to 2SC3265
· Small package
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Collect or-base voltage VCBO -30 V
Collect or-emitter voltage VCEO -25 V
Emitter-base voltage VEBO -5 V
Collector current IC -800 mA
Base current IB -160 mA
Collect or power diss i pation PC 200 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg -55~150 °C
Marking
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
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Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = -30 V, IE = 0 ¾ ¾ -0.1 mA
Emitte r cut-off cur r e nt IEBO V
EB = -50 V, IC = 0 ¾ ¾ -0.1 mA
Collect or-em it t er breakdown voltage V (BR) CEO IC = -10 mA, IB = 0 -25 ¾ ¾ V
Emitter-base breakdown voltage V (BR) EBO IE = -0.1 mA, IC = 0 -5 ¾ ¾ V
hFE (1)
(Note) VCE = -1 V, I C = -100 mA 100 ¾ 320
DC current gain
hFE (2) V
CE = -1 V, IC = -800 mA 40 ¾ ¾
Collect or-em it t e r saturati on vol tage VCE (sat) I
C = -500 mA, IB = -20 mA ¾ ¾ -0.4 V
Base-emit ter voltage VBE V
CE = -1 V, IC = -10 mA -0.5 ¾ -0.8 V
Transiti on frequenc y fT V
CE = -5 V, IC = -10 mA ¾ 120 ¾ MHz
Collect or output capaci t ance Cob V
CB = -10 V, IE = 0, f = 1 MHz ¾ 13 ¾ pF
Note: hFE (1) classification O: 100~200, Y: 160~320
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000707EA
A
RESTRICTIONS O N PRODUCT USE
