Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
V(BR)CEO Collector-Emit ter Breakdown
Voltage* IC = 10 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 75 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
ICBO Collector Cutoff Current VCB = 60 V, I E = 0 10 nA
IEBO Emitter Cutoff Current VEB = 3.0 V, I C = 0 10 nA
hFE DC Current Gain IC = 0.1 mA , VCE = 10 V
IC = 1.0 mA , VCE = 10 V
IC = 10 mA, V CE = 10 V
IC = 150 mA, V CE = 10 V *
IC = 150 mA, V CE = 1. 0 V *
IC = 500 mA, V CE = 10 V*
35
50
75
100
50
40
300
VCE(sat)Collector-Emitt er Saturation Voltage* IC = 150 mA , IB = 15 mA
IC = 500 mA, IB = 50 mA 0.3
1.0 V
V
VBE(sat)Base-Emitter Saturat i on V oltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA 1.2
2.0 V
V
NPN Multi-Chip General Purpose Amplifier
(continued)
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.1 1 V af=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 20 mA , VCE = 20 V,
f = 100 MHz 300 MHz
Cobo Output Capacitance VCB = 10 V, I E = 0, f = 100 kHz 4.0 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 20 pF
NF Noise Figure IC = 100 µA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz 2.0 dB
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
tdDelay Tim e VCC = 30 V, V BE(OFF) = 0.5 V, 8 ns
trRise Ti me IC = 150 mA, IB1 = 15 mA 20 ns
tsStorage Time VCC = 30 V, IC = 150 m A , 180 ns
tfFall Time IB1 = IB2 = 15 m A 40 ns
FFB2222A / FMB2222A / MMPQ2222A