BF 2030 Silicon N-Channel MOSFET Tetrode Preliminary data 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 2030 NEs Pin Configuration 1=S 2=D 3 = G2 Package 4 = G1 SOT-143 Maximum Ratings Parameter Symbol Drain-source voltage VDS Continuos drain current ID 20 Gate 1/gate 2 peak source current IG1/2SM 10 Gate 1 (external biasing) +VG1SE 6 Total power dissipation, TS = 94 C Ptot 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 Value 8 Unit V mA V mW C Thermal Resistance Channel - soldering point Rthchs 1 280 K/W Dec-10-1999 BF 2030 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)DS 10 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 nA +IG2SS - - 50 nA IDSS - 50 A Drain-source current IDSX - 12 - mA Gate 2-source pinch-off voltage VG2S(p) 0.3 0.6 - V VG1S(p) 0.3 0.5 - DC characteristics Drain-source breakdown voltage V ID = 20 A, VG1S = 0 V, VG2S = 0 V Gate 1 - source breakdown voltage +IG1S = 10 mA, VG2S = 0 V, VDS = 0 V Gate 2 - source breakdown voltage +IG2S = 10 mA, VG1S = 0 V, VDS = 0 V Gate 1 source leakage current VG1S = 5 V, VG2S = 0 V, VDS = 0 V Gate 2 source leakage current VG2S = 5 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = 4 V VDS = 5 V, VG2S = 4 V, RG1 = 100 k VDS = 5 V, ID = 20 A Gate 1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 A 2 Dec-10-1999 BF 2030 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. gfs - 31 - mS Cg1ss - 2.4 - pF Cdss - 1.3 - Gps - 23 - F - 1.5 - Gps - 50 - AC characteristics Forward transconductance VDS = 5 V, ID = 10 mA, VG2S = 4 V Gate 1 input capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Power gain dB VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, ID = 10 mA, VG2S = 4 V, f = 800 MHz Gain control range VDS = 5 V, VG2S = 4 ... 0V, f = 800 MHz 3 Dec-10-1999 BF 2030 Drain current ID = f (IG1) Total power dissipation Ptot = f (TS ) VG2S = 4 V 300 28 mA 24 mW 22 ID P tot 20 200 18 16 150 14 12 10 100 8 6 50 4 2 0 0 20 40 60 80 100 120 C 0 0 150 10 20 30 40 50 60 70 80 A 100 IG1 TS Output characteristics ID = f (VDS ) Gate 1 current IG1 = f (VG1S) VG2S = 4 V VDS = 5 V VG1S = Parameter VG2S = Parameter 20 210 mA A 1.4V 4V 180 16 165 1.3V 150 IG1 ID 14 3.5V 12 135 3V 120 1.2V 10 105 90 8 1.1V 2.5V 75 6 60 1V 4 2V 45 30 2 0 0 0.8V 1 2 3 4 5 6 7 8 V 15 0 0.0 10 VDS 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VG1S 4 Dec-10-1999 BF 2030 Gate 1 forward transconductance Drain current ID = f (VG1S) gfs = f (ID) VDS = 5 V VDS = 5 V, VG2S = Parameter VG2S = Parameter 40 30 mA 24 3V 30 3V 22 20 25 ID gfs 4V 4V mS 2.5V 20 18 16 2V 14 2V 15 12 10 1.5V 8 10 6 4 5 2 0 0 4 8 12 16 20 24 mA 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 30 ID 2.0 VG1S Drain current ID = f (VGG ) Drain current ID = f (VGG) VDS = 5 V, VG2S = 4 V, RG1 = 100 k VG2S = 4 V RG1 = Parameter in k (connected to VGG, VGG=gate1 supply voltage ) 13 28 mA mA 11 24 10 22 9 20 ID ID V 8 80 100 18 120 16 7 14 6 12 5 10 4 8 3 6 2 4 1 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 70 V 0 0.0 5.0 VGG 1.0 2.0 3.0 4.0 5.0 6.0 V 8.0 VGG =VDS 5 Dec-10-1999