NTE274 (NPN) & NTE275 (PNP) Silicon Complementary Transistors Darlington Power Amplifier, Switch Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low-frequency switching and hammer driver applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector-Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector-Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built-In Base-Emitter Shunt Resistors Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.286W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 - - V OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 50mA, IB = 0 ICEO VCE = 40V, IB = 0 - - 0.5 mA ICER VCE = 80V, VEB(off) = 1.5V - - 0.5 mA VCB = 80V, VEB(off) = 1.5V, TA = +150C - - 5.0 mA VBE = 5V, IC = 0 - - 2.0 mA IEBO Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 3V, IC = 2A 750 - 18000 VCE = 3V, IC = 4A 100 - - IC = 2A, IB = 8mA - - 2.0 V IC = 4A, IB = 40mA - - 3.0 V ON Characteristics DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 40mA - - 4.0 V Base-Emitter ON Voltage VBE(on) VCE = 3V, IC = 2A - - 2.8 V IC = 1.5A, VCE = 3V, f = 1MHz 4.0 - - VCB = 10V, IE = 0, f = 0.1MHz - - 120 pF - - 200 pF 300 - - Dynamic Characteristics Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio |hfe| Output Capacitance NTE274 Cob NTE275 Small-Signal Current Gain hfe IC = 1.5A, VCE = 3V, f = 1kHz NTE274 C B .485 (12.3) Dia .295 (7.5) .062 (1.57) E .031 (0.78) Dia .960 (24.3) NTE275 .360 (9.14) Min Base .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) C .145 (3.7) R Max B Collector/Case E Emitter