NTE274 (NPN) & NTE275 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier, Switch
Description:
The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66
type case designed for general purpose amplifier, low–frequency switching and hammer driver
applications.
Features:
DHigh DC Current Gain: hFE = 3000 Typ @ IC = 2A
DLow Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A
DCollector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min
DMonolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCB 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB80mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 0.286W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 3.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0 80 – – V
Collector Cutoff Current ICEO VCE = 40V, IB = 0 – – 0.5 mA
ICER VCE = 80V, VEB(off) = 1.5V – – 0.5 mA
VCB = 80V, VEB(off) = 1.5V, TA = +150 °C – – 5.0 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 2.0 mA
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain hFE VCE = 3V, IC = 2A 750 –18000
VCE = 3V, IC = 4A 100 – –
Collector–Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 8mA – – 2.0 V
IC = 4A, IB = 40mA – – 3.0 V
Base–Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 40mA – – 4.0 V
Base–Emitter ON Voltage VBE(on) VCE = 3V, IC = 2A – – 2.8 V
Dynamic Characteristics
Magnitude of Common Emitter
Small–Signal Short–Circuit
Forward Current Transfer Ratio
|hfe| IC = 1.5A, VCE = 3V, f = 1MHz 4.0 – –
Output Capacitance
NTE274 Cob VCB = 10V, IE = 0, f = 0.1MHz – – 120 pF
NTE275 – – 200 pF
Small–Signal Current Gain hfe IC = 1.5A, VCE = 3V, f = 1kHz 300 – –
NTE274
NTE275
B
C
E
B
C
E
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360 (9.14)
Min
.031 (0.78) Dia
.960 (24.3) Base
.580 (14.7)
.200
(5.08)
EmitterCollector/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
