TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL J-FET
Equivalent To MIL-PRF-19500/295
T4-LDS-0004 Rev. 1 (063375) Page 1 of 1
DEVICES LEVELS
2N2608 MQ = JAN Equivalent
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Gate-Source Voltage VGSS 30 V
Power Dissipation(1)
TA = +25°C PD 300 mW
Operating Junction & Storage Temperature Range Top, Tstg -65 to + 200 °C
(1) Derate linearly 1.71 mW/°C for TA > +25°C.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0μA dc
V(BR)GSS 30 Vdc
Gate Reverse Current
VDS = 0, VGS = 30V dc
VDS = 0, VGS = 15V dc
IGSS
10
7.5 ηA
Drain Current
VGS = 0V dc, VDS = 5.0V dc
IDSS -1.0 -5.0 mA
Gate-Source Cutoff Voltage
VDS = 5.0V, ID = 1.0μA dc
VGS(off) 0.75 6.0 Vdc
Magnitude of Small-Signal, Common-Source
Short-Circuit Forward Transfer Admittance
VGS = 0, VDS = 5.0V dc, f = 1.0kHz |Yfs2| 1,000 4,500
μmho
Small-Signal, Common-Source Short-Circuit
Input Capacitance
VGS = 0, VDS = 5.0V dc, f = 1.0MHz Ciss 10 pF
Common-Source Spot Noise Figure
VGS = 0, VDS = 5.0V dc, f = 1.0kHz
BW = 16%, RG = 1.0 megohms
egen = 1.82mV dc, RL = 470Ω NF 3.0 dB
TO-18
(TO-206AA)
