ES2A thru ES2D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier Major Ratings and Characteristics IF(AV) 2.0 A VRRM 50 V to 200 V IFSM 50 A trr 20 ns VF 0.90 V Tj max. 150 C DO-214AA (SMB) Features Mechanical Data * * * * * * * Case: DO-214AA (SMB) Epoxy meets UL 94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end Glass passivated chip junction Ideal for automated placement Ultrafast recovery times for high efficiency Low forward voltage, low power losses High forward surge capability Meets MSL level 1, per J-STD-020C Solder Dip 260 C, 40 seconds Typical Applications For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and Telecommunication Maximum Ratings TA = 25 C unless otherwise specified Parameter Symbol Device marking code ES2A ES2B ES2C ES2D EA EB EC ED Unit Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V 50 100 150 200 Maximum DC blocking voltage VDC Maximum average forward rectified current at TL = 110 C IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG - 55 to + 150 C Operating junction and storage temperature range Document Number 88587 24-Oct-05 V www.vishay.com 1 ES2A thru ES2D Vishay General Semiconductor Electrical Characteristics TA = 25 C unless otherwise specified Parameter Test condition Symbol Maximum at 2.0 A(1) instantaneous forward voltage TA = 25 C TA = 100 C Maximum DC reverse current at rated DC blocking voltage Max. reverse recovery IF = 0.5 A, IR = I.0 A, time lrr = 0.25 A ES2A ES2B ES2C ES2D Unit VF 0.90 V IR 10 350 A trr 20 ns Maximum reverse recovery time IF = 2.0 A, VR = 30 V, di/dt = 50 A/s, Ir = 10 % IRM TJ = 25 C TJ = 100 C trr 30 50 ns Maximum stored charge IF = 2.0 A, VR = 30 V, di/dt = 50 A/s, Ir = 10 % IRM TJ = 25 C TJ = 100 C Qrr 10 25 nC Typical junction capacitance at 4.0 V, 1 MHz CJ 18 pF Notes: (1) Pulse test: 300 ms pulse width, 1 % duty cycle Thermal Characteristics TA = 25 C unless otherwise specified Parameter Typical thermal Symbol ES2A ES2B ES2C ES2D Unit 75 20 RJA RJL resistance(1) C/W Notes: (1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas Ratings and Characteristics Curves (TA = 25 C unless otherwise specified) 60 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 2.0 1.0 Resistive or Inductive Load P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Areas 0 50 40 30 20 10 0 80 90 100 110 120 130 140 150 Lead Temperature (C) Figure 1. Maximum Forward Current Derating Curve www.vishay.com 2 8.3 ms Single Half Sine-Wave at TL = 110 C 1 10 100 Number of Cycles at 60 Hz Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Document Number 88587 24-Oct-05 ES2A thru ES2D Vishay General Semiconductor 60 Tj = 150 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 Tj = 125 C 1 Tj = 100 C 0.1 Tj = 25 C 0.01 TJ = 25 C f = 1.0 MHz Vsig = 50mVp-p 50 40 30 20 10 0 0.2 0.4 0.6 0.8 1 1.2 0.1 1.4 1 Instantaneous Forward Voltage (V) 10 100 Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance Instantaneous Reverse Leakage Current (A) 10000 Tj = 150 C 1000 Tj = 125 C Tj = 100 C 100 10 Tj = 25 C 1 0.1 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Package outline dimensions in inches (millimeters) DO-214AA (SMB) Mounting Pad Layout Cathode Band 0.085 MAX. (2.159 MAX.) 0.086 (2.20) 0.155 (3.94) 0.130 (3.30) 0.077 (1.95) 0.086 MIN. (2.18 MIN.) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 MIN. (1.52 MIN.) 0.220 REF 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.008 (0.2) 0 (0) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) Document Number 88587 24-Oct-05 www.vishay.com 3