ES2A thru ES2D
Document Number 88587
24-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AA (SMB)
Surface Mount Ultrafast Plastic Rectifier
Major Ratings and Characteristics
IF(AV) 2.0 A
VRRM 50 V to 200 V
IFSM 50 A
trr 20 ns
VF0.90 V
Tj max. 150 °C
Features
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
Mechanical Data
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter Symbol ES2A ES2B ES2C ES2D Unit
Device marking code EA EB EC ED
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V
Maximum RMS voltage VRMS 35 70 105 140 V
Maximum DC blocking voltage VDC 50 100 150 200 V
Maximum average forward rectified current at TL = 110 °C IF(AV) 2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM 50 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
www.vishay.com
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Document Number 88587
24-Oct-05
ES2A thru ES2D
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
Parameter Test condition Symbol ES2A ES2B ES2C ES2D Unit
Maximum
instantaneous forward
voltage
at 2.0 A(1) VF 0.90 V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 100 °C
IR 10
350
µA
Max. reverse recovery
time
IF = 0.5 A, IR = I.0 A,
lrr = 0.25 A
trr 20 ns
Maximum reverse
recovery time
IF = 2.0 A, VR = 30 V,
di/dt = 50 A/µs,
Ir = 10 % IRM
TJ = 25 °C
TJ = 100 °C
trr 30
50
ns
Maximum stored
charge
IF = 2.0 A, VR = 30 V,
di/dt = 50 A/µs,
Ir = 10 % IRM
TJ = 25 °C
TJ = 100 °C
Qrr 10
25
nC
Typical junction
capacitance
at 4.0 V, 1 MHz CJ 18 pF
Parameter Symbol ES2A ES2B ES2C ES2D Unit
Typical thermal resistance(1) RθJA
RθJL
75
20
°C/W
Figure 1. Maximum Forward Current Derating Curve
0
3.0
80 90 100 110 120 130 140 150
Average Forward Rectified Current (A)
Lead Temperature (°C)
2.0
1.0
Resistive or Inductive Load
P.C.B. Mounted on 0.2 x 0.2"
(5.0 x 5.0mm) Copper Pad Areas
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
10
20
30
40
50
60
1 10010
Peak Forward Surge Current (A)
8.3 ms Single Half Sine-Wave
at T
L
= 110 °C
Number of Cycles at 60 Hz
ES2A thru ES2D
Document Number 88587
24-Oct-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 25 °C
0.2 0.4 0.6 0.81 1.2 1.4
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
1
10
100
1000
10000
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 25 °C
Percent of Rated Peak Reverse Voltage (%)
020406080 100
0.1
Instantaneous Reverse Leakage
Current (µA)
Figure 5. Typical Junction Capacitance
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1 10 100
20
10
30
40
50
60
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
0.160 (4.06)
0.180 (4.57)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52) 0.008 (0.2)
0 (0)
0.205 (5.21)
0.220 (5.59)
0.130 (3.30)
0.155 (3.94)
0.084 (2.13)
0.096 (2.44)
0.077 (1.95)
0.086 (2.20)
Cathode Band
DO-214AA (SMB)
0.085 MAX.
(2.159 MAX.)
0.220 REF
0.086 MIN.
(2.18 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
