BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application * Power Darlington TR * Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector 3.Emitter Ta = 25C unless otherwise noted Parameter Value Units : BDW94 : BDW94C -45 -100 V V : BDW94 : BDW94C -45 -100 V V Collector-Base Voltage Collector-Emitter Voltage IC Collector Current (DC) -12 A ICP Collector Current (Pulse) * -15 A IB Base Current -0.2 A PC Collector Dissipation (TC = 25C) 80 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C (c)2005 Fairchild Semiconductor Corporation BDW94/C Rev. B 1 www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor January 2005 Symbol VCEO(sus) ICBO ICEO TC = 25C unless otherwise noted Parameter Collector-Emitter Sustaining Voltage : BDW94 : BDW94C Conditions IC = -100mA, IB = 0 Min. Typ. Max -45 -100 Units V V Collector Cut-off Current : BDW94 : BDW94C VCB = -45V, IE = 0 VCB = -100V, IE = 0 -100 -100 A A : BDW94 : BDW94C VEB = -45V, IB = 0 VCE = -100V, IB = 0 -1 -1 mA mA -2 mA Collector Cut-off Current IEBO Emitter Cut-off Current VEB = -5V, IC = 0 hFE DC Current Gain * VCE = -3V, IC = -3A VCE = -3V, IC = -5A VCE = -3V, IC = -10A 1000 750 100 20000 VCE(sat) Collector-Emitter Saturation Voltage * IC = -5A, IB = -20mA IC = -10A, IB = -100mA -2 -3 V V VBE(sat) Base-Emitter Saturation Voltage * IC = -5A, IB = -20mA IC = -10A, IB = -100mA -2.5 -4 V V VF Parallel Diode Forward Voltage * IF = -5A IF = -10A -2 -4 V V -1.3 -1.8 * Pulse Test: PW = 300s, Duty Cycle = 1.5% Pulsed 2 BDW94/C Rev. B www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor Electrical Characteristics Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage 100k -10 VCE(sat) [V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = -3V 10k 1k 100 -0.1 -1 -10 IC= 250 IB -1 -0.1 -0.1 -100 IC [A], COLLECTOR CURRENT -1 -10 -100 IC [A], COLLECTOR CURRENT Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance -20 1000 f=1MHz IE=0 -16 Cob[pF], CAPACTIANCE IC [A], COLLECTOR CURRENT VCE= -3V -12 -8 -4 -0 -0.0 -0.8 -1.6 -2.4 -3.2 100 10 -4.0 -1 -100 VCB [V], COLLECTOR-BASE VOLTAGE VBE [V], BASE-EMITTER VOLTAGE Figure 5. Safe Operating Area Figure 6. Power Derating -100 120 100 IC MAX. PC [W], POWER DISSIPATION IC [A], COLLECTOR CURRENT -10 5 ms 1 ms 100uS -10 DC -1 BDW94 BDW94A BDW94B BDW94C -0.1 -1 -10 -100 60 40 20 0 -1000 0 VCE [V], COLLECTOR EMITTER VOLTAGE 50 100 150 200 250 o Tc [ C], CASE TEMPERATURE 3 BDW94/C Rev. B 80 www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor Typical Performance Characteristics BDW94/C PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 (45 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 10.08 0.30 (1.00) 13.08 0.20 ) 1.27 0.10 +0.10 0.50 -0.05 2.40 0.20 2.54TYP [2.54 0.20] 10.00 0.20 Dimensions in Millimeters 4 BDW94/C Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 5 BDW94/C Rev. B www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor TRADEMARKS