ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VDRM =
4500
V
ITGQM =
5500
A
ITSM =
33×103
A
V(T0) =
1.3
V
rT =
0.26
mΩ
VDC-link
=
2800
V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 55L4500
PRELIMINARY
Doc. No. 5SYA1243-01 Aug 07
• High snubberless turn-off rating
• Optimized for medium frequency (<1 kHz)
• High electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Option for series connection (contact factory)
Blocking
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Rep. peak off-state voltage
VDRM Gate Unit energized, Note 1 4500 V
Permanent DC voltage for
100 FIT failure rate of GCT
VDC-link Ambient cosmic radiation at sea level
in open air. Gate Unit energized 2800 V
Reverse voltage VRRM
17 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Rep. peak off-state current I
DRM VD = VDRM, Gate Unit energized 50 mA
Mechanical data (see Fig. 11, 12)
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Mounting force Fm 36 40 44 kN
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Pole-piece diameter Dp ± 0.1 mm 85 mm
Housing thickness H 25.3 25.8 mm
Weight m 2.9 kg
Surface creepage distance D
s Anode to Gate 33 mm
Air strike distance Da Anode to Gate 10 mm
Length l ± 1.0 mm 439 mm
Height h ± 1.0 mm 40 mm
Width IGCT w ± 1.0 mm 173 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5SHY 55L4500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1243-01 Aug 07 page 2 of 9
GCT Data
On-state (see Fig. 3, 4, 5, 6, 14, 15)
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Max. average on-state
current IT(AV)M Half sine wave, TC = 85 °C,
Double side cooled 1880 A
Max. RMS on-state current I
T(RMS) 2950 A
Max. peak non-repetitive
surge on-state current ITSM 50×103 A
Limiting load integral I2t
tp = 3 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V 3.75×106 A2s
Max. peak non-repetitive
surge on-state current ITSM 33×103 A
Limiting load integral I2t
tp = 10 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V 54.5×106 A2s
Max. peak non-repetitive
surge on-state current ITSM 22×103 A
Limiting load integral I2t
tp = 30 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V 7.26×106 A2s
Stray inductance between
GCT and antiparallel diode LD Only relevant for applications with
antiparallel diode to the IGCT 300 nH
Critical rate of rise of on-
state current diT/dtcr For higher diT/dt and current lower
than 100 A an external retrigger puls
is required.
200 A/µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
On-state voltage VT IT = 4000 A, Tj = 125 °C 2.15 2.35 V
Threshold voltage V(T0) 1.25 1.3 V
Slope resistance rT Tj = 125 °C
IT = 1000...6000 A 0.23 0.26 mΩ
Turn-on switching (see Fig. 14, 15)
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Critical rate of rise of on-
state current diT/dtcr f = 0..500 Hz,Tj = 125 °C,IT = 5000 A
VD = 2800 V, ITM ≤ 7000 A 1000 A/µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Turn-on delay time tdon 4 µs
Turn-on delay time status
feedback tdon SF 7 µs
Rise time tr 1 µs
Turn-on energy per pulse Eon
VD = 2800 V, Tj = 125 °C
IT = 4000 A, di/dt = VD / Li
Li = 3 µH
CCL = 20 µF, LCL = 0.3 µH
1.8 J
Turn-off switching (see Fig. 7, 8, 10, 14, 15)
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Max. controllable turn-off
current ITGQM1 VD = 2800 V
ton > 100µs
5500 A
Max. controllable turn-off
current ITGQM2
VDM ≤ VDRM,
Tj = 125°C,
RS = 0.35 Ω,
CCL = 20 µF,DRMLCL
≤ 0.3 µH
VD = 2800 V
40µs < ton < 100µs
5000 A
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Turn-off delay time tdoff 7 µs
Turn-off delay time status
feedback tdoff SF 7 µs
Turn-off energy per pulse Eoff
VD = 2800 V, Tj = 125 °C
VDM ≤ VDRM, RS = 0.35 Ω
ITGQ = 4000 A, Li = 3 µH
CCL = 20 µF, LCL = 0.3 µH 26 tbd J
5SHY 55L4500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1243-01 Aug 07 page 3 of 9
Gate Unit Data
Power supply (see Fig. 2, 9, 10, 12, 13)
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Gate Unit voltage
(Connector X1) VGIN,RMS
AC square wave amplitude (15 kHz
- 100kHz) or DC voltage. No
galvanic isolation to power circuit.
28 40 V
Min. current needed to power
up the Gate Unit IGIN Min Rectified average current
see application note 5SYA 2031 2 A
Gate Unit power consumption
PGIN Max
130 W
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Internal current limitation IGIN Max
Rectified average current limited by
the Gate Unit 8 A
Optical control input/output 2)
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Min. on-time ton 40 µs
Min. off-time toff 40 µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Optical input power Pon CS -15 -1 dBm
Optical noise power Poff CS -45 dBm
Optical output power Pon SF -19 -1 dBm
Optical noise power Poff SF
CS: Command signal
SF: Status feedback
Valid for 1mm plastic optical fiber
(POF) -50 dBm
Pulse width threshold tGLITCH Max. pulse width without response 400 ns
External retrigger pulse width
tretrig 600 1100 ns
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors 2) (see Fig. 11, 12, 13)
Parameter Symbol
Description
Gate Unit power connector X1 AMP: MTA-156, Part Number 641210-5 3)
LWL receiver for command signal CS Avago, Type HFBR-2528 4)
LWL transmitter for status feedback
SF Avago, Type HFBR-1528 4)
2) Do not disconnect or connect fiber optic cables while light is on.
3) AMP, www.amp.com
4) Avago Technologies, www.avagotech.com
Visual feedback (see Fig. 13)
Parameter Symbol
Description Color
Gate OFF LED1 "Light" when GCT is off (green)
Gate ON LED2 "Light" when gate-current is flowing (yellow)
Fault LED3 "Light" when not ready / Failure (red)
Power supply voltage OK LED4 "Light" when power supply is within specified range (green)
5SHY 55L4500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1243-01 Aug 07 page 4 of 9
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Junction operating temperature Tvj 0 125 °C
Storage temperature range Tstg 0 60 °C
Ambient operational temperature Ta 0 50 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction-to-case
of GCT Rth(j-c) Double side cooled 8.5 K/kW
Thermal resistance case-to-
heatsink of GCT Rth(c-h) Double side cooled 3 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
i
c)-th(j i
∑
=
τ
i 1 2 3 4
Ri(K/kW)
5.562 1.527 0.868 0.545
τi(s) 0.5119 0.0896 0.0091 0.0024
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time (max. values)
Max. Turn-off current for Lifetime operation
• calculated lifetime of on-board capacitors
20 years
• with slightly forced air cooling (air velocity
> 0.5 m/s)
• strong air cooling allows for increased
ambient temperature
Fig. 2 Max. turn-off current vs. frequency for lifetime
operation
5SHY 55L4500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1243-01 Aug 07 page 5 of 9
Max. on-state characteristic model:
VT25 TTvjTTvjTTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for iT = 300 – 30000 A
Max. on-state characteristic model:
VT125 TTvjTTvjTTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for iT = 300 – 30000 A
A25 B25 C25 D25
A125 B125 C125 D125
Max.
143.3×10-3 122.7×10-6 167.3×10-3 0.0 Max.
-13.0×10-3 179.2×10-6 198.5×10-3 0.0
Typ.
131.1×10-3 112.3×10-6 153.1×10-3 0.0 Typ.
-11.9×10-3 163.9×10-6 181.7×10-3 0.0
Fig. 3 GCT on-state voltage characteristics
Fig. 4 GCT on-state voltage characteristics
Fig. 5 Surge on-state current vs. pulse length, half-
sine wave Fig. 6 Surge on-state current vs. number of pulses,
half-sine wave, 10 ms, 50 Hz
5SHY 55L4500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1243-01 Aug 07 page 6 of 9
Fig. 7 GCT turn-off energy per pulse vs. turn-off
current Fig. 8 Safe Operating Area
Fig. 9 Max. Gate Unit input power in chopper mode Fig. 10 Burst capability of Gate Unit
5SHY 55L4500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1243-01 Aug 07 page 7 of 9
Fig. 11 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
1) V
GIN (AC or DC+)
2) V
GIN (AC or DC+)
3) Cathode
4) V
GIN (AC or DC-)
5) V
GIN (AC or DC-)
Fig. 12 Detail A: pin out of supply connector X1
Logic
Monitoring Turn-
Off
Circuit
Turn-
On
Circuit
Gate
Cathode
Internal Supply (No galvanic isolation to power circuit)
X1
CS Rx
Command Signal (Light)
Tx
Status Feedback (Light)
Anode
SF
AS-IGCT
Gate Unit AS-GCT
Supply (VGIN)
LED1
LED2
LED3
LED4
Fig. 13 Block diagram
5SHY 55L4500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1243-01 Aug 07 page 8 of 9
IT
VDSP
VDM
VD
0.4 ITGQ
Turn-off
tdoff
CS
SF
tdoff SF
CS
tr
IT
ITM
dIT/dt
0.9 VD
0.1 VD
VD
Turn-on
tdon SF
tdon
SF
External
Retrigger pulse
CS
tretrig
SF
VD
ton toff
Fig. 14 General current and voltage waveforms with IGCT - specific symbols
LCL
Li
RsDUT
LLoad
CCL
VDC
LD
Fig. 15 Test circuit
5SHY 55L4500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1243-01 Aug 07
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Related documents:
5SYA 2031 Applying IGCT Gate Units
5SYA 2032 Applying IGCTs
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SYA 2046 Failure rates of IGCTs due to cosmic rays
5SYA 2048 Field measurements on High Power Press Pack Semiconductors
5SYA 2051 Voltage ratings of high power semiconductors
5SZK 9107 Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
