2SC1815 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R201-006,F
ABSOLUTE MAXIMUM RATING (Ta=25℃,unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
Base Current IB 50 mA
Power Dissipation(Ta= 25℃) PD 400 mW
Junction Temperature TJ +125 ℃
Storage Temperature TSTG -55 ~ +125 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently dam aged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-off Current ICBO V
CB=60V, IE=0 100 nA
Emitter Cut-off Current IEBO V
EB=5V, IC=0 100 nA
Collector-Emitter Saturation Voltage VCE(SAT) IC=100mA, IB=10mA 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(SAT) IC=100mA, IB=10mA 1.0 V
DC Current Gain hFE1
hFE2 VCE=6V, IC=2mA
VCE=6V, IC=150mA 120
25 700
Current Gain Bandwidth Product fT V
CE=10V, IC=50mA 80 MHz
Output Capacitance Cob V
CB=10V, IE=0, f=1MHz 2.0 3.0 pF
Noise Figure NF IC=-0.1mA, VCE=6V
RG=10kΩ, f=100Hz 1.0 10 dB
CLASSIFICATION OF hFE1
RANK Y GR BL
RANGE 120-240 200-400 350-700