Si2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 * Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301 BDS (L1)* * Marking Code Ordering Information: Si2301BDS-T1 Si2301BDS-T1-E3 (Lead (Pb)-free) Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 C)b TA = 25 C TA = 70 C Pulsed Drain Currenta ID IS TA = 25 C Power Dissipationb TA = 70 C Operating Junction and Storage Temperature Range PD V - 2.4 - 2.2 - 1.9 - 1.8 IDM Continuous Source Current (Diode Conduction)b A - 10 - 0.72 - 0.6 0.9 0.7 0.57 0.45 TJ, Tstg Unit - 55 to 150 W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol b Maximum Junction-to-Ambientc RthJA Typical Maximum 120 145 140 175 Unit C/W Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t 5 s. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72066 S-80427-Rev. D, 03-Mar-08 www.vishay.com 1 Si2301BDS Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = - 250 A - 20 VGS(th) VDS = VGS, ID = - 250 A - 0.45 IGSS VDS = 0 V, VGS = 8 V 100 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 C - 10 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage VDS - 5 V, VGS = - 4.5 V -6 VDS - 5 V, VGS = - 2.5 V -3 - 0.95 nA A A VGS = - 4.5 V, ID = - 2.8 A 0.080 0.100 VGS = - 2.5 V, ID = - 2.0 A 0.110 0.150 gfs VDS = - 5 V, ID = - 2.8 A 6.5 VSD IS = - 0.75 A, VGS = 0 V - 0.80 - 1.2 VDS = - 6 V, VGS = - 4.5 V ID - 2.8 A 4.5 10 0.7 RDS(on) V S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss nC 1.1 375 VDS = - 6 V, VGS = 0 V, f = 1 MHz pF 95 65 Switchingc Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD = - 6 V, RL = 6 ID - 1.0 A, VGEN = - 4.5 V Rg = 6 20 30 40 60 30 45 20 30 ns Notes: a. Pulse test: pulse width 300 s duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72066 S-80427-Rev. D, 03-Mar-08 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 10 VGS = 5 thru 2.5 V TC = - 55 C 8 I D - Drain Current (A) I D - Drain Current (A) 8 2V 6 4 1.5 V 25 C 125 C 6 4 2 2 1V 0 0.0 0 0 1 2 3 4 5 0.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.0 2.5 3.0 800 0.4 C - Capacitance (pF) 600 0.3 0.2 VGS = 2.5 V Ciss 400 200 Coss 0.1 VGS = 4.5 V Crss 0.0 0 0 2 4 6 8 10 0 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 5 VGS = 4.5 V ID = 2.8 A VDS = 10 V ID = 2.8 A 1.4 3 2 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 Transfer Characteristics 0.5 R DS(on) - On-Resistance () 1.0 VGS - Gate-to-Source Voltage (V) 1.2 1.0 0.8 1 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72066 S-80427-Rev. D, 03-Mar-08 4 5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.6 10 R DS(on) - On-Resistance () I S - Source Current (A) 0.5 TJ = 150 C 1 TJ = 25 C 0.4 ID = 2.8 A 0.3 0.2 0.1 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5 10 0.4 0.3 8 0.2 Power (W) VGS(th) Variance (V) 1 ID = 250 A 0.1 6 4 0.0 TA = 25 C 2 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 TJ - Temperature (C) Time (s) Threshold Voltage Single Pulse Power 100 1000 100 10 s 100 s I D - Drain Current (A) 10 Limited by RDS(on)* 1 ms 1 10 ms TA = 25 C Single Pulse 100 ms 0.1 DC, 100 s, 10 s, 1 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified Square Wave Pulse Duration (s) Safe Operating Area www.vishay.com 4 Document Number: 72066 S-80427-Rev. D, 03-Mar-08 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72066. Document Number: 72066 S-80427-Rev. D, 03-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1