Vishay Siliconix
Si2301BDS
Document Number: 72066
S-80427-Rev. D, 03-Mar-08
www.vishay.com
1
P-Channel 2.5-V (G-S) MOSFET
FEATURES
• Halogen-free Option Available
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)ID (A)b
- 20 0.100 at VGS = - 4.5 V - 2.4
0.150 at VGS = - 2.5 V - 2.0
Ordering Information: Si2301BDS-T1
Si2301BDS-T1-E3 (Lead (Pb)-free)
Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2301 BDS (L1)*
* Marking Code
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 5 s.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage VDS - 20 V
Gate-Source Voltage VGS ± 8
Continuous Drain Current (TJ = 150 °C)bTA = 25 °C ID
- 2.4 - 2.2
A
TA = 70 °C - 1.9 - 1.8
Pulsed Drain CurrentaIDM - 10
Continuous Source Current (Diode Conduction)bIS- 0.72 - 0.6
Power DissipationbTA = 25 °C PD
0.9 0.7 W
TA = 70 °C 0.57 0.45
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb
RthJA
120 145 °C/W
Maximum Junction-to-Ambientc140 175
Available
Pb-free
RoHS*
COMPLIANT
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Document Number: 72066
S-80427-Rev. D, 03-Mar-08
Vishay Siliconix
Si2301BDS
Notes:
a. Pulse test: pulse width ≤ 300 µs duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit Min. Typ. Max.
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.45 - 0.95
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 20 V, VGS = 0 V - 1 µA
VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) VDS ≤ - 5 V, VGS = - 4.5 V - 6 A
VDS ≤ - 5 V, VGS = - 2.5 V - 3
Drain-Source On-State ResistanceaRDS(on)
VGS = - 4.5 V, ID = - 2.8 A 0.080 0.100 Ω
VGS = - 2.5 V, ID = - 2.0 A 0.110 0.150
Forward Transconductanceagfs VDS = - 5 V, ID = - 2.8 A 6.5 S
Diode Forward Voltage VSD IS = - 0.75 A, VGS = 0 V - 0.80 - 1.2 V
Dynamicb
Total Gate Charge Qg
VDS = - 6 V, VGS = - 4.5 V
ID ≅ - 2.8 A
4.5 10
nCGate-Source Charge Qgs 0.7
Gate-Drain Charge Qgd 1.1
Input Capacitance Ciss
VDS = - 6 V, VGS = 0 V, f = 1 MHz
375
pFOutput Capacitance Coss 95
Reverse Transfer Capacitance Crss 65
Switchingc
Tur n - O n T i m e td(on)
VDD = - 6 V, RL = 6 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V
Rg = 6 Ω
20 30
ns
tr40 60
Turn-Off Time td(off) 30 45
tf20 30
Document Number: 72066
S-80427-Rev. D, 03-Mar-08
www.vishay.com
3
Vishay Siliconix
Si2301BDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
2
4
6
8
10
012345
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS = 5 thru 2.5 V
1.5 V
2 V
1 V
0.0
0.1
0.2
0.3
0.4
0.5
0246810
- On-Resistance (Ω)RDS(on)
ID - Drain Current (A)
VGS = 2.5 V
VGS = 4.5 V
0
1
2
3
4
5
012345
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VGS
VDS = 10 V
ID = 2.8 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS
- Gate-to-Source Voltage (V)
- Drain Current (A)ID
TC = - 55 °C
125 °C
25 °C
0
200
400
600
800
048121620
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
Crss
Coss
Ciss
RDS(on) - On-Resistance
(Normalized)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
VGS = 4.5 V
ID = 2.8 A
TJ - Junction Temperature (°C)
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Document Number: 72066
S-80427-Rev. D, 03-Mar-08
Vishay Siliconix
Si2301BDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
- Source Current (A)IS
TJ = 150 °C
VSD - Source-to-Drain Voltage (V)
10
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 25 °C
1
Variance (V)VGS(th)
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
- 50 - 25 0 25 50 75 100 125 150
TJ - Temperature (°C)
ID = 250 µA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.0
0.1
0.2
0.3
0.4
0.5
0.6
012345
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
ID = 2.8 A
Time (s)
Power (W)
TA = 25 °C
10
8
6
4
2
0
0.01 0.1 1 10 100 1000
Safe Operating Area
Square Wave Pulse Duration (s)
VDS
- Drain-to-Source Voltage (V)
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)ID
0.1
10 µs
100 µs
1 ms
10 ms
100 ms
TA = 25 °C
Single Pulse
DC, 100 s, 10 s, 1 s
RDS(on)*
Limited by
* VGS minimum VGS at which rDS(on) is specified
Document Number: 72066
S-80427-Rev. D, 03-Mar-08
www.vishay.com
5
Vishay Siliconix
Si2301BDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72066.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
10-4 -3 -2 -1
10 10 10 1 10 600
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 62.5 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
100
Square Wave Pulse Duration (s)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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