Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 2 1Publication Order Number:
2N6400/D
2N6400 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half–wave silicon gate–controlled, solid–state devices are needed.
•Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•Blocking Voltage to 800 Volts
•Device Marking: Logo, Device Type, e.g., 2N6400, Date Code
*MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage (Note 1.)
(TJ = 40 to 125°C, Sine Wave
50 to 60 Hz; Gate Open) 2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
VDRM,
VRRM
50
100
200
400
600
800
Volts
On-State RMS Current
(180° Conduction Angles; TC = 10 0 °C) IT(RMS) 16 A
Average On-State Current
(180° Conduction Angles; TC = 10 0 °C) IT(AV) 10 A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 90°C) ITSM 160 A
Circuit Fusing (t = 8.3 ms) I2t 145 A2s
Forward Peak Gate Power
(Pulse Width ≤1.0 µs, TC = 100°C) PGM 20 Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 100°C) PG(AV) 0.5 Watts
Forward Peak Gate Current
(Pulse Width ≤1.0 µs, TC = 100°C) IGM 2.0 A
Operating Junction Temperature Range TJ–40 to
+125 °C
Storage Temperature Range Tstg –40 to
+150 °C
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
2N6400 TO220AB 500/Box
2N6401 TO220AB
2N6402 TO220AB
http://onsemi.com
500/Box
500/Box
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4Anode
2N6403 TO220AB 500/Box
2N6404 TO220AB 500/Box
2N6405 TO220AB 500/Box
TO–220AB
CASE 221A
STYLE 3
123
4
MARKING
DIAGRAM
YY WW
640x
x = 0, 1, 2, 3, 4 or 5
YY = Year
WW = W ork Week
2N6400 Series
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.5 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C
TJ = 125°C
IDRM, IRRM –
––
–10
2.0 µA
mA
ON CHARACTERISTICS
*Peak Forward On–State Voltage
(ITM = 32 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%) VTM – – 1.7 Volts
*Gate Trigger Current (Continuous dc) TC = 25°C
(VD = 12 Vdc, RL = 100 Ohms) TC = –40°CIGT –
–9.0
–30
60 mA
*Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms) TC = 25°C
TC = –40°C
VGT –
–0.7
–1.5
2.5
Volts
Gate Non–Trigger Voltage
(VD = 12 Vdc, RL = 100 Ohms) TC = +125°CVGD 0.2 – – Volts
*Holding Current TC = 25°C
(VD = 12 Vdc, Initiating Current = 200 mA,
Gate Open) *TC = –40°C
IH–
–
18
–
40
60
mA
Turn-On Time
(ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM)tgt – 1.0 – µs
Turn-Off Time
(ITM = 16 A, IR = 16 A, VD = Rated VDRM)T
C = 25°C
TJ = +125°C
tq–
–15
35 –
–
µs
DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform) TJ = +125°Cdv/dt – 50 – V/µs
*Indicates JEDEC Registered Data.
2N6400 Series
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3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode –
Forward Blocking Region
IRRM at VRRM
(off state)
C
T , MAXIMUM CASE TEMPERATURE ( C)°
6.0
120
100
112
128
60°
α = 30°
0 1.0 2.0 3.0 8.0
α = CONDUCTION ANGLE
Figure 1. Average Current Derating
IT(AV), AVERAGE ONSTATE FORWARD CURRENT (AMPS)
α
90°
P , AVERAGE POWER (WATTS)
(AV)
12
0
4.0
8.0
TJ ≈ 125°C
Figure 2. Maximum On–State Power Dissipation
IT(AV), AVERAGE ONSTATE FORWARD CURRENT (AMPS)
7.00 1.0 2.0 3.0 8.0
α = CONDUCTION ANGLE
α
4.0 5.0 7.0
180°
dc
10
2.0
6.0
14
16
4.0 5.0 6.0
60°
α = 30°
90°
180°
dc
124
104
108
116
10
9.0
120°
9.0 10
120°
2N6400 Series
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Figure 3. On–State Characteristics Figure 4. Maximum Non–Repetitive Surge Current
Figure 5. Thermal Response
1.0
0.02
0.03
0.05
0.07
0.1
100
0.2
0.3
0.5
0.7
0.2 0.3 0.5 1.0 2.0
0.8
0.1
ZθJC(t) = RθJC • r(t)
1.0
120
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
TJ = 125°C
f = 60 Hz
NUMBER OF CYCLES
130
140
150
160
20
2.0 3.0 4.0 6.0 8.0 10
0.4
0.01
t, TIME (ms)
3.0 5.0
110
0.2
0.3
0.5
0.7
7.0
5.0
1.0
2.0
10
50
3.0
20
30
70
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
1.6 2.42.0 4.0 4.41.2
30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k 10 k1.0 k
I , PEAK SURGE CURRENT (AMP)
TSM
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TM
i
, INSTANTANEOUS ON-STATE FORWARD CURRENT (AMPS)
TJ = 25°C
125°C
1 CYCLE
200
2.8 3.63.2
2N6400 Series
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5
I , HOLDING CURRENT (mA)
H
TYPICAL CHARACTERISTICS
TJ, JUNCTION TEMPERATURE (°C)
100
10
1
10
1
100
Figure 6. Typical Gate Trigger Current
versus Pulse Width
30
50
20
10
5.0
70
7.0
125110806550355-10-25 20
TJ, JUNCTION TEMPERATURE (°C)
2001005020105.00.2 1.00.5 2.0
PULSE WIDTH (ms)
iGT
IGT
VGT
125110958050355-40
0.8
-10-25 20
TJ, JUNCTION TEMPERATURE (°C)
0.6
0.4
0.2
, PEAK GATE CURRENT (mA)
3.0
100
, GATE TRIGGER VOLTAGE (VOLTS)
1.0
TJ = -40°C
25°C
125°C
, GATE TRIGGER CURRENT (mA)
-40
OFFSTATE VOLTAGE = 12 V
RL = 50
2.0
1.0
Figure 7. Typical Gate Trigger Current
versus Junction Temperature
Figure 8. Typical Gate Trigger Voltage
versus Junction Temperature Figure 9. Typical Holding Current
versus Junction Temperature
95
65
0.9
0.7
0.5
0.3
125110958050355-40 -10-25 20 65
2N6400 Series
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PACKAGE DIMENSIONS
TO–220AB
CASE 221A–07
ISSUE AA
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
A
K
L
V
GD
N
Z
H
Q
FB
123
4
–T– SEATING
PLANE
S
R
J
U
TC
2N6400 Series
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7
Notes
2N6400 Series
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8
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