GBU4A, GBU4B, GBU4D, GBU4G, GBU4J, GBU4K, GBU4M www.vishay.com Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES * UL recognition file number E54214 * Ideal for printed circuit boards * High surge current capability * High case dielectric strength of 1500 VRMS ~ ~ - + - ~ ~ * Solder dip 275 C max. 10 s, per JESD 22-B106 + * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Case Style GBU Case Style GBU TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for monitor, TV, printer, switching mode power supply, adapter, audio equipment, and home appliances applications. PRIMARY CHARACTERISTICS Package GBU IF(AV) 4.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 150 A MECHANICAL DATA Case: GBU Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade IR 5 A VF at IF = 4.0 A 1.0 V TJ max. 150 C Diode variations In-line Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified output current at TC = 100 C (1) TA = 40 C (2) Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range IF(AV) 4.0 3.0 A IFSM 150 A I2t 93 A2s TJ, TSTG -55 to +150 C Notes (1) Unit case mounted on 1.6" x 1.6" x 0.06" thick (4.0 cm x 4.0 cm x 0.15 cm) aluminum plate (2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length Revision: 05-Aug-15 Document Number: 88614 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBU4A, GBU4B, GBU4D, GBU4G, GBU4J, GBU4K, GBU4M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Maximum instantaneous forward voltage drop per diode 4.0 A Maximum DC reverse current at rated DC blocking voltage per diode Typical junction capacitance per diode GBU4A GBU4B GBU4D GBU4G VF GBU4J GBU4K GBU4M UNIT 1.0 V 5.0 TA = 25 C A IR TA = 125 C 4 V, 1 MHz 500 CJ 57 pF THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance GBU4A GBU4B GBU4D GBU4G RJA (2) 22 RJC (1) 4.2 GBU4J GBU4K GBU4M UNIT C/W Notes (1) Units case mounted on aIuminum plate heatsink (2) Units mounted in free air, no heatsink on PCB, 0.5" x 0.5" (12 mm x 12 mm) copper pads, 0.375" (9.5 mm) lead length ORDERING INFORMATION PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GBU4J-E3/45 3.857 45 20 Tube GBU4J-E3/51 3.857 51 250 Paper tray RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 150 Heatsink Mounting, TC 1.6 x 1.6 x 0.06" Thickness (4.0 x 4.0 x 0.15 cm) Al. Plate Peak Forward Surge Current (A) Average Forward Output Current (A) 4.0 3.0 2.0 1.0 P.C.B. Mounting, TA 0.47 x 0.47" (12 x 12 mm) Copper Pads 0.375" (9.5 mm) Lead Length 60 Hz Resistive or Inductive Load TJ = TJ max. Single Sine-Wave 100 50 1.0 Cycle 0 0 0 50 100 150 1 10 100 Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 05-Aug-15 Document Number: 88614 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBU4A, GBU4B, GBU4D, GBU4G, GBU4J, GBU4K, GBU4M www.vishay.com Vishay General Semiconductor 1000 10 1 TJ = 25 C Pulse Width = 300 s 1 % Duty Cycle 0.1 0.01 0.4 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) Instantaneous Forward Current (A) 100 100 10 0.6 0.8 1.0 1.2 1.4 0.1 1.6 Instantaneous Forward Voltage (V) 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 3 - Typical Forward Characteristics Per Diode 1000 100 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (A) 1 TA = 150 C 100 TA = 125 C TA = 100 C 10 1 TA = 25 C 0.1 10 1 0.01 10 20 30 40 50 60 70 80 90 0.1 0.01 100 1 0.1 10 100 t - Heating Time (s) Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type GBU 0.020 R (TYP.) 0.310 (7.9) 0.290 (7.4) 0.085 (2.16) 0.065 (1.65) 0.140 (3.56) 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.125 (3.2) x 45 Chamfer 0.160 (4.1) 0.140 (3.5) 0.075 (1.9) R . 9 TYP. 0.740 (18.8) 0.720 (18.3) 0.080 (2.03) 0.060 (1.52) 5 TYP. 0.100 (2.54) 0.085 (2.16) 0.080 (2.03) 0.065 (1.65) 0.050 (1.27) 0.040 (1.02) 0.190 (4.83) 0.210 (5.33) 0.710 (18.0) 0.690 (17.5) 0.085 (2.16) 0.075 (1.90) 0.026 (0.66) 0.020 (0.51) Polarity shown on front side of case, positive lead by beveled corner Revision: 05-Aug-15 Document Number: 88614 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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