PBSS5350Z,135 - NXP - Pdf.Support

DATA SH EET

Product data sheet

Supersedes data of 2003 Jan 20 2003 May 13

DISCRETE SEMICONDUCTORS

PBSS5350Z

50 V low VCEsat PNP transistor

handbook, halfpage

M3D087

2003 May 13 2

NXP Semiconductors Product data sheet

50 V low VCEsat PNP transistor PBSS5350Z

FEATURES

•Low collector-emitter saturation voltage

•High collector current capability: IC and ICM

•High collector current gain (hFE) at high IC

•Higher efficiency leading to less heat generation

•Reduced PCB area requirements compared to DPAK.

APPLICATIONS

•Power management

– DC/DC converters

– Supply line switching

– Battery charger

– Linear voltage regulation (LDO).

•Peripheral drivers

– Driver in low supply voltage applications, e.g. lamps,

LEDs

– Inductive load driver, e. g. relays, buzzers, motors.

DESCRIPTION

PNP low VCEsat transistor in a SOT223 plastic pack age.

NPN complement: PBSS4350Z.

MARKING

TYPE NUMBER MARKING CODE

PBSS5350Z PB5350

PINNING

PIN DESCRIPTION

1base

2collector

3emitter

4collector

handbook, halfpage

123

MAM288

Top view

2, 4

Fig.1 Simplified outline (SOT223) and sym bol.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage −50 V

ICcollector current (DC) −3 A

ICM peak collector current −5 A

RCEsat equivalent on-resistance <150 mΩ

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NXP Semiconductors Pr oduct data shee t

50 V low VCEsat PNP transistor PBSS5350Z

LIMITING VALUES

In accordance with th e Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated ; mou nting pad for collector 1 cm2.

2. Device mounted on a printed-circuit board; single sided copper; tinplated ; mou nting pad for collector 6 cm2.

3. For other mounting conditions see “Therma l con sid erations for SOT223 in the General Part of associated

Handbook”.

THERMAL CHARACTE RISTICS

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated ; mou nting pad for collector 1 cm.

2. Device mounted on a printed-circuit board; single sided copper; tinplated ; mou nting pad for collector 6 cm2.

3. For other mounting conditions see “Therma l con sid erations for SOT223 in the General Part of associated

Handbook”.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-bas e v oltage open emitter − −60 V

VCEO collector-emitter voltage open base − −50 V

VEBO emitter-b as e voltage open collector − −6 V

ICcollector current (D C) − −3 A

ICM peak collector current − −5 A

IBM peak base current − −1 A

Ptot total power dissipation Tamb ≤ 25 °C; notes 1 and 3 −1.35 W

Tamb ≤ 25 °C; notes 2 and 3 −2 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; notes 1 and 3 92 K/W

in free air; notes 2 and 3 62.5 K/W

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NXP Semiconductors Pr oduct data shee t

50 V low VCEsat PNP transistor PBSS5350Z

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base c ut-off current VCB = −50 V; IE = 0 − − −100 nA

VCB = −50 V; IE = 0; Tj = 150 °C− − −50 μA

IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA

hFE DC current gain VCE = −2 V;

IC = −500 mA 200 − −

IC = −1 A; note 1 200 − −

IC = −2 A; note 1 100 − −

VCEsat collector-emitter satu ration

voltage IC = −500 mA; IB = −50 mA − − −100 mV

IC = −1 A; IB = −50 mA − − −180 mV

IC = −2 A; IB = −200 mA; note 1 − − −300 mV

RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 −120 <150 mΩ

VBEsat base-emitter saturation

voltage IC = −2 A; IB = −200 mA; note 1 − − −1.2 V

VBEon base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1 − − −1.1 V

fTtransition frequency IC = −100 mA; VCE = −5 V;

f = 100 MHz 100 − − MHz

Cccollector ca pacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 40 pF

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NXP Semiconductors Pr oduct data shee t

50 V low VCEsat PNP transistor PBSS5350Z

handbook, halfpage

hFE

IC (mA)

1000

200

400

600

800

MGW167

−10

−1

−1−10 −10

−10

(1)

(2)

(3)

Fig.2 DC current gain as a fu nction of collector

current; ty pical values.

VCE = −2 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

IC (mA)

VBE

(V)

−1.2

−0.4

−0.8

MGW168

−10

−1

−1−10 −10

−10

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

VCE = −2 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

IC (mA)

−10

−1

MGW169

−10

−1

−1−10 −10

−10

VCEsat

(mV)

(1)

(2)

(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

IC (mA)

−1.4

−0.8

−0.6

−0.4

−0.2

−1.0

−1.2

MGW170

−10

−1

−1−10 −10

−10

VBEsat

(V)

(1)

(2)

(3)

Fig.5 Base-emitter saturation v oltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2003 May 13 6

NXP Semiconductors Pr oduct data shee t

50 V low VCEsat PNP transistor PBSS5350Z

handbook, halfpage

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

(11)

(12)

−2

−1000

−200

−400

−600

−800

−0.4 −0.8 −1.2 −1.6

MGW171

VCE (V)

(mA)

Fig.6 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB = −3.96 mA.

(2) IB = −3.63 mA.

(3) IB = −3.30 mA.

(4) IB = −2.97 mA.

(5) IB = −2.64 mA.

(6) IB = −2.31 mA.

(7) IB = −1.98 mA.

(8) IB = −1.65 mA.

(9) IB = −1.32 mA.

(10) IB = −0.99 mA.

(11) IB = −0.66 mA.

(12) IB = −0.33 mA.

Tamb = 25 °C.

handbook, halfpage

(4)

(5)

(6)

(7)

(8)

(9)

(10)

−2

−5

−1

−2

−3

−4

−0.4 −0.8 −1.2 −1.6

MGW172

VCE (V)

(A)

(1) (2) (3)

Fig.7 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB = −250 mA.

(2) IB = −225 mA.

(3) IB = −200 mA.

(4) IB = −175 mA.

(5) IB = −150 mA.

(6) IB = −125 mA.

(7) IB = −100 mA.

(8) IB = −75 mA.

(9) IB = −50 mA.

(10) IB = −25 mA.

Tamb = 25 °C.

handbook, halfpage

103

102

10−1

−10−1

MGU390

−1−10 IC (mA)

RCEsat

(Ω)

−102−103−104

(1)

(3)

(2)

Fig.8 Collector-emitter equivalent on-resistance

as a function of collector current; typical

values.

IC/IB = 20.

(1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.

2003 May 13 7

NXP Semiconductors Pr oduct data shee t

50 V low VCEsat PNP transistor PBSS5350Z

PACKAGE OUTLINE

UNIT A1bpcDEe1HELpQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 97-02-28

99-09-13

detail X

vMA

0 2 4 mm

scale

132

lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22

2003 May 13 8

NXP Semiconductors Pr oduct data shee t

50 V low VCEsat PNP transistor PBSS5350Z

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s ) described in this document may have changed since this do cument was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tion.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

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not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress abov e on e or more limit ing

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

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case of any incons istency or conflict between information

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/04/pp9 Date of release: 2003 May 13 Document orde r number: 9397 750 11058