R6030KNZ1
Nch 600V 30A Power MOSFET Datasheet
llOutline
VDSS 600V
RDS(on)(Max.) 0.130Ω
ID±30A TO-247
PD305W
llInner circuit
llFeatures
1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant
llPackaging specifications
Type
Packing Tube
Reel size (mm) -
llApplication Tape width (mm) -
Switching Basic ordering unit (pcs) 450
Taping code C9
Marking R6030KNZ1
llAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter Symbol Value Unit
Drain - Source voltage VDSS 600 V
Continuous drain current (Tc = 25°C) ID*1 ±30 A
Pulsed drain current IDP*2 ±90 A
Gate - Source voltage static VGSS
±20 V
AC(f＞1Hz) ±30 V
Avalanche current, single pulse IAS 5.2 A
Avalanche energy, single pulse EAS*3 636 mJ
Power dissipation (Tc = 25°C) PD305 W
Junction temperature Tj150 ℃
Operating junction and storage temperature range Tstg -55 to +150 ℃
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© 2015 ROHM Co., Ltd. All rights reserved. 1/12 20150911 - Rev.001
Not Recommended for
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R6030KNZ1 Datasheet
llThermal resistance
Parameter Symbol
Values
Unit
Min. Typ. Max.
Thermal resistance, junction - case RthJC*4 - - 0.41 ℃/W
Thermal resistance, junction - ambient RthJA - - 30 ℃/W
Soldering temperature, wavesoldering for 10s Tsold - - 265 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage V(BR)DSS VGS = 0V, ID = 1mA 600 - - V
Zero gate voltage
drain current IDSS
VDS = 600V, VGS = 0V
μA
Tj = 25°C - - 100
Tj = 125°C - - 1000
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V - - ±100 nA
Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 3 - 5 V
Static drain - source
on - state resistance RDS(on)*5
VGS = 10V, ID = 14.5A
Ω
Tj = 25°C - 0.115 0.130
Tj = 125°C - 0.24 -
Gate resistance RG f = 1MHz, open drain - 2.1 - Ω
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© 2015 ROHM Co., Ltd. All rights reserved. 2/12 20150911 - Rev.001
Not Recommended for
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R6030KNZ1 Datasheet
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Forward Transfer
Admittance |Yfs|*5 VDS = 10V, ID = 15A 10 20 - S
Input capacitance Ciss VGS = 0V - 2350 -
pFOutput capacitance Coss VDS = 25V - 2000 -
Reverse transfer capacitance Crss f = 1MHz - 140 -
Turn - on delay time td(on)*5 VDD ⋍ 300V, VGS = 10V - 36 -
ns
Rise time tr*5 ID = 15A - 75 -
Turn - off delay time td(off)*5 RL ⋍ 20Ω - 90 -
Fall time tf*5 RG = 10Ω - 45 -
llGate charge characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Total gate charge Qg*5 VDD ⋍ 300V - 56 -
nCGate - Source charge Qgs*5 ID = 30A - 18 -
Gate - Drain charge Qgd*5 VGS = 10V - 23 -
Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 30A - 6.3 - V
*1 Limited only by maximum channel temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L≒50mH, VDD=50V, RG=25Ω, STARTING Tj=25℃
*4 TC=25℃
*5 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved. 3/12 20150911 - Rev.001
Not Recommended for
New Designs
R6030KNZ1 Datasheet
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Continuous forward
current IS*1
TC = 25℃
- - 30 A
Pulse forward current ISP*2 - - 90 A
Forward voltage VSD*5 VGS = 0V, IS = 30A - - 1.5 V
Reverse recovery time trr
IS = 30A
di/dt = 100A/μs
- 517 - ns
Reverse recovery charge Qrr - 9.6 - μC
Peak reverse recovery current Irrm - 37 - A
llTypical transient thermal characteristics
Symbol Value Unit Symbol Value Unit
Rth1 0.190
K/W
Cth1 0.0143
Ws/K
Rth2 0.429 Cth2 0.322
Rth3 0.250 Cth3 14.7
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© 2015 ROHM Co., Ltd. All rights reserved. 4/12 20150911 - Rev.001
Not Recommended for
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R6030KNZ1 Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Avalanche Energy Derating
Curve vs. Junction Temperature
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© 2015 ROHM Co., Ltd. All rights reserved. 5/12 20150911 - Rev.001
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R6030KNZ1 Datasheet
llElectrical characteristic curves
Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)
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© 2015 ROHM Co., Ltd. All rights reserved. 6/12 20150911 - Rev.001
Not Recommended for
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R6030KNZ1 Datasheet
llElectrical characteristic curves
Fig.6 Breakdown Voltage vs.
Junction Temperature
Fig.7 Typical Transfer Characteristics
Fig.8 Gate Threshold Voltage vs.
Junction Temperature
Fig.9 Forward Transfer Admittance vs.
Drain Current
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© 2015 ROHM Co., Ltd. All rights reserved. 7/12 20150911 - Rev.001
Not Recommended for
New Designs
R6030KNZ1 Datasheet
llElectrical characteristic curves
Fig.10 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.11 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.12 Static Drain - Source On - State
Resistance vs. Drain Current(l)
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© 2015 ROHM Co., Ltd. All rights reserved. 8/12 20150911 - Rev.001
Not Recommended for
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R6030KNZ1 Datasheet
llElectrical characteristic curves
Fig.13 Typical Capacitance vs.
Drain - Source Voltage
Fig.14 Switching Characteristics Fig.15 Dynamic Input Characteristics
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© 2015 ROHM Co., Ltd. All rights reserved. 9/12 20150911 - Rev.001
Not Recommended for
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R6030KNZ1 Datasheet
llElectrical characteristic curves
Fig.16 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.17 Reverse Recovery Time vs.
Inverse Diode Forward Current
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© 2015 ROHM Co., Ltd. All rights reserved. 10/12 20150911 - Rev.001
Not Recommended for
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R6030KNZ1 Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform
Fig.5-1 dv/dt Measurement Circuit Fig.5-2 dv/dt Waveform
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© 2015 ROHM Co., Ltd. All rights reserved. 11/12 20150911 - Rev.001
Not Recommended for
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R6030KNZ1 Datasheet
llDimensions
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© 2015 ROHM Co., Ltd. All rights reserved. 12/12 20150911 - Rev.001
Not Recommended for
New Designs
Not Recommended for
New Designs
