EP1100HSETTSC-12.000M - Ecliptek Corporation

RoHS

EP1100HSETTSC-62.500M

EP11 00 HS ET TS C -62.500M

Series

RoHS Compliant (Pb-free) 5.0V 8 Pin DIP Metal

Thru-Hole HCMOS/TTL Programmable Oscillator

Frequency Tolerance/Stability

±100ppm Maximum

Package

Operating Temperature Range

-40°C to +85°C

Nominal Frequency

62.500MHz

Output Logic Type

CMOS

Pin 1 Connection

Tri-State (Disabled Output: High Impedance)

Duty Cycle

50 ±10(%)

ELECTRICAL SPECIFICATIONS

Nominal Frequency 62.500MHz

Frequency Tolerance/Stability ±100ppm Maximum (Inclusive of all conditions: Calibration Tolerance at 25°C, Frequency Stability over the

Operating Temperature Range,Supply Voltage Change, Output Load Change,

First Year Aging at 25°C, Shock, and Vibration)

Aging at 25°C ±5ppm/year Maximum

Operating Temperature Range -40°C to +85°C

Supply Voltage 5.0Vdc ±10%

Input Current 45mA Maximum (Unloaded)

Output Voltage Logic High (Voh) Vdd-0.4Vdc Minimum (IOH=-16mA)

Output Voltage Logic Low (Vol) 0.4Vdc Maximum (IOL=+16mA)

Rise/Fall Time 4nSec Maximum (Measured at 20% to 80% of waveform)

Duty Cycle 50 ±10(%) (Measured at 1.4Vdc with TTL Load; Measured at 50% of waveform with HCMOS Load)

Load Drive Capability 15pF HCMOS Load Maximum

Output Logic Type CMOS

Pin 1 Connection Tri-State (Disabled Output: High Impedance)

Pin 1 Input Voltage (Vih and Vil) +2.0Vdc Minimum to enable output, +0.8Vdc Maximum to disable output, No Connect to enable output.

Standby Current 50µA Maximum (Pin 1 = Ground)

Disable Current 30mA Maximum (Pin 1 = Ground)

Peak to Peak Jitter (tPK) 100pSec Maximum, 50pSec Typical

RMS Period Jitter (tRMS) 13pSec Maximum, 8pSec Typical

Start Up Time 10mSec Maximum

Storage Temperature Range -55°C to +125°C

ENVIRONMENTAL & MECHANICAL SPECIFICATIONS

Fine Leak Test MIL-STD-883, Method 1014, Condition A

Gross Leak Test MIL-STD-883, Method 1014, Condition C

Lead Integrity MIL-STD-883, Method 2004

Mechanical Shock MIL-STD-202, Method 213, Condition C

Resistance to Soldering Heat MIL-STD-202, Method 210

Resistance to Solvents MIL-STD-202, Method 215

Solderability MIL-STD-883, Method 2003

Temperature Cycling MIL-STD-883, Method 1010

Vibration MIL-STD-883, Method 2007, Condition A

www.ecliptek.com | Specification Subject to Change Without Notice | Rev E 2/16/2010 | Page 1 of 7

EP1100HSETTSC-62.500M

MECHANICAL DIMENSIONS (all dimensions in millimeters)

7.620

±0.203

7.620 ±0.203

13.2

MAX

13.2

MAX

85DIA 0.457

±0.1 (X4)

5.08 MIN

5.6 MAX

0.8 ±0.1 (X3)

MARKING

ORIENTATION

PIN CONNECTION

1 Tri-State (High

Impedance)

4 Case/Ground

5 Output

8 Supply Voltage

LINE MARKING

1ECLIPTEK

2EP11TS

EP11=Product Series

362.500M

4XXYZZ

XX=Ecliptek Manufacturing

Code

Y=Last Digit of the Year

ZZ=Week of the Year

OUTPUT DISABLE

(HIGH IMPED ANCE

STATE)

OUTPUT WAVEFORM & TIMING DIAGRAM

VOH

VOL

80% or 2.0VDC

50% or 1.4VDC

20% or 0.8VDC

Fall

Time Rise

Time TW

Duty Cycle (%) = TW/T x 100

VIH

VIL

tPLZ tPZL

CLOCK OUTPUT TRI-STATE INPUT

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EP1100HSETTSC-62.500M

Supply

Voltage

(VDD)

Test Circuit for TTL Output

Output

No Connect

or Tri-State

Ground

+ +

Power

Supply Voltage

Meter

Current

Meter

0.01µF

(Note 1) 0.1µF

(Note 1) CL

(Note 3)

(Note 4)

Power

Supply

Oscilloscope Frequency

Counter

Probe

(Note 2)

Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency

ceramic bypass capacitor close to the package ground and VDD pin is required.

Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth

(>300MHz) passive probe is recommended.

Note 3: Capacitance value CL includes sum of all probe and fixture capacitance.

Note 4: Resistance value RL is shown in Table 1. See applicable specification sheet for 'Load Drive Capability'.

Note 5: All diodes are MMBD7000, MMBD914, or equivalent.

Table 1: RL Resistance Value and CL Capacitance

Value Vs. Output Load Drive Capability

Output Load

Drive Capability RL Value

(Ohms) CL Value

(pF)

10TTL

5TTL

2TTL

10LSTTL

1TTL

390

780

1100

2000

2200

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EP1100HSETTSC-62.500M

Supply

Voltage

(VDD)

Test Circuit for CMOS Output

Output

No Connect

or Tri-State

Ground

+ +

Power

Supply 0.01µF

(Note 1) 0.1µF

(Note 1) CL

(Note 3)

Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency

ceramic bypass capacitor close to the package ground and VDD pin is required.

Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth

(>300MHz) passive probe is recommended.

Note 3: Capacitance value CL includes sum of all probe and fixture capacitance.

Voltage

Meter

Current

Meter

Oscilloscope Frequency

Counter

Probe

(Note 2)

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T Min

T Max

Critical Zone

T to T

L P

Ramp-up Ramp-down

t 25°C to Peak

t Preheat

StL

Temperature (T)

Time (t)

Recommended Solder Reflow Methods

EP1100HSETTSC-62.500M

High Temperature Solder Bath (Wave Solder)

TS MAX to TL (Ramp-up Rate) 3°C/second Maximum

Preheat

- Temperature Minimum (TS MIN) 150°C

- Temperature Typical (TS TYP) 175°C

- Temperature Maximum (TS MAX) 200°C

- Time (tS MIN) 60 - 180 Seconds

Ramp-up Rate (TL to TP)3°C/second Maximum

Time Maintained Above:

- Temperature (TL)217°C

- Time (tL)60 - 150 Seconds

Peak Temperature (TP)260°C Maximum for 10 Seconds Maximum

Target Peak Temperature (TP Target) 250°C +0/-5°C

Time within 5°C of actual peak (tp)20 - 40 seconds

Ramp-down Rate 6°C/second Maximum

Time 25°C to Peak Temperature (t) 8 minutes Maximum

Moisture Sensitivity Level Level 1

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T Min

T Max

Critical Zone

T to T

L P

Ramp-up Ramp-down

t 25°C to Peak

t Preheat

StL

Temperature (T)

Time (t)

Recommended Solder Reflow Methods

EP1100HSETTSC-62.500M

Low Temperature Infrared/Convection 185°C

TS MAX to TL (Ramp-up Rate) 5°C/second Maximum

Preheat

- Temperature Minimum (TS MIN) N/A

- Temperature Typical (TS TYP) 150°C

- Temperature Maximum (TS MAX) N/A

- Time (tS MIN) 60 - 120 Seconds

Ramp-up Rate (TL to TP)5°C/second Maximum

Time Maintained Above:

- Temperature (TL)150°C

- Time (tL)200 Seconds Maximum

Peak Temperature (TP)185°C Maximum

Target Peak Temperature (TP Target) 185°C Maximum 2 Times

Time within 5°C of actual peak (tp)10 seconds Maximum 2 Times

Ramp-down Rate 5°C/second Maximum

Time 25°C to Peak Temperature (t) N/A

Moisture Sensitivity Level Level 1

www.ecliptek.com | Specification Subject to Change Without Notice | Rev E 2/16/2010 | Page 6 of 7

T Min

T Max

Critical Zone

T to T

L P

Ramp-up Ramp-down

t 25°C to Peak

t Preheat

StL

Temperature (T)

Time (t)

Recommended Solder Reflow Methods

EP1100HSETTSC-62.500M

Low Temperature Solder Bath (Wave Solder)

TS MAX to TL (Ramp-up Rate) 5°C/second Maximum

Preheat

- Temperature Minimum (TS MIN) N/A

- Temperature Typical (TS TYP) 150°C

- Temperature Maximum (TS MAX) N/A

- Time (tS MIN) 30 - 60 Seconds

Ramp-up Rate (TL to TP)5°C/second Maximum

Time Maintained Above:

- Temperature (TL)150°C

- Time (tL)200 Seconds Maximum

Peak Temperature (TP)245°C Maximum

Target Peak Temperature (TP Target) 245°C Maximum 1 Time / 235°C Maximum 2 Times

Time within 5°C of actual peak (tp)5 seconds Maximum 1 Time / 15 seconds Maximum 2 Times

Ramp-down Rate 5°C/second Maximum

Time 25°C to Peak Temperature (t) N/A

Moisture Sensitivity Level Level 1

Low Temperature Manual Soldering

185°C Maximum for 10 seconds Maximum, 2 times Maximum.

High Temperature Manual Soldering

260°C Maximum for 5 seconds Maximum, 2 times Maximum.

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