1. Product profile
1.1 General description
Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic
package.
1.2 Features
■Continuous reverse voltage: max. 35 V
■Continuous forward current: max. 100 mA
■Low diode capacitance: max. 1.0 pF
■Low diode forward resistance: max. 0.7 Ω.
1.3 Applications
■Band switching.
2. Pinning information
3. Ordering information
BAT18
Silicon planar diode
Rev. 02 — 31 August 2004 Product data sheet
Table 1: Pinning
Pin Description Simplified outline Symbol
1 anode
2 not connected
3 cathode
12
3
sym044
2
1
3
Table 2: Ordering information
Type number Package
Name Description Version
BAT18 - plastic surface mounted package; 3 leads SOT23
9397 750 13385 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 31 August 2004 2 of 7
Philips Semiconductors BAT18
Silicon planar diode
4. Marking
[1] * = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
5. Limiting values
6. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board.
7. Characteristics
Table 3: Marking
Type number Marking code[1]
BAT18 10*
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRcontinuous reverse voltage - 35 V
IFcontinuous forward current - 100 mA
Tstg storage temperature −55 +125 °C
Tjjunction temperature - 125 °C
Table 5: Thermal characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Typ Unit
Rth(j-tp) thermal resistance from junction to tie-point 330 K/W
Rth(j-a) thermal resistance from junction to ambient [1] 500 K/W
Table 6: Electrical characteristics
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage IF= 100 mA; see Figure 1 - - 1.2 V
IRreverse current see Figure 2
VR= 20 V - - 100 nA
VR= 20 V; Tj=60°C --1µA
Cddiode capacitance VR= 20 V; f = 1 MHz; see Figure 3 - 0.8 1.0 pF
rDdiode forward
resistance IF= 5 mA; f = 200 MHz; see Figure 4 - 0.5 0.7 Ω
9397 750 13385 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 31 August 2004 3 of 7
Philips Semiconductors BAT18
Silicon planar diode
(1) Tj = 60 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
VR = 20 V.
(1) maximum values.
(2) typical values.
Fig 1. Forward current as a function of forward
voltage. Fig 2. Reverse current as a function of junction
temperature.
f = 1 MHz; Tj = 25 °C. f = 200 MHz; Tj = 25 °C.
Fig 3. Diode capacitance as a function of reverse
voltage; typical values. Fig 4. Diode forward resistance as a function of
forward current; typical values.
001aab165
VF (V)
0.3 1.51.10.7
40
60
20
80
100
IF
(mA)
0
(1) (2) (3)
001aab166
102
1
10
104
103
105
IR
(nA)
10−1
Tj (°C)
0 16012040 80
(1)
(2)
VR (V)
10-1102
101
001aab167
0.9
1.1
0.7
1.3
1.5
Cd
(pF)
0.5
2
0102
001aab168
101
1
rD
(Ω)
IF (mA)
9397 750 13385 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 31 August 2004 4 of 7
Philips Semiconductors BAT18
Silicon planar diode
8. Package outline
Fig 5. Package outline.
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
9397 750 13385 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 31 August 2004 5 of 7
Philips Semiconductors BAT18
Silicon planar diode
9. Revision history
Table 7: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
BAT18_2 20040831 Product data sheet - 9397 750 13385 BAT18_1
Modifications: •The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
•Table 3: marking code changed.
BAT18_1 19960313 Product specification - not applicable -
Philips Semiconductors BAT18
Silicon planar diode
9397 750 13385 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 31 August 2004 6 of 7
10. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet containsdata from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights. Date of release: 31 August 2004
Document number: 9397 750 13385
Published in The Netherlands
Philips Semiconductors BAT18
Silicon planar diode
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 1
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4
9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 5
10 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . . 6
11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
13 Contact information . . . . . . . . . . . . . . . . . . . . . 6
