© Freescale Semiconductor, Inc., 2005, 2006. All rights reserved.
Freescale Semiconductor
Technical Data
Freescale reserves the right to change th e detail specifica tions as may be required to p ermit improvements in the design of its
products.
Document Number: MBC13916/D
Rev. 2.2, 05/2006
MBC13916
Package Information
Plastic Package
Case 1404
(SOT-343R)
(Scale 2:1)
Ordering Information
Device Device Marking or
Operating
Temperature Range Package
MBC13916T11916 SOT-343R
MBC13916NT1116N SOT-343R
1Refer to Table 1.
1 Introduction
The MBC13916 is a cost-effective, high isolation
amplifier fabricated with an advanced RF BiCMOS
process using the SiGe:C module. It is intended to be a
replacement for the MRFIC0916 and is housed in the
smaller SOT-343R surface mount package. As with the
MRFIC0916, this device is designed for general purpose
RF applications, yet has improved high frequency gain
and noise figure. On-chip bias circuitry sets the bias
point while matching is accomplished off-chip, affording
the maximum in application flexibility.
• Usable frequency range = 100 to 2500 MHz
• 19 dB typical gain at 900 MHz, VCC = 2.7 V
•NF
min (device level) = 0.9 dB @ 900 MHz
•NF
min (device level) = 1.9 dB @ 1.9 GHz
• 2.5 dBm typical output power at 1.0 dB gain
compression at 900 MHz, VCC = 2.7 V
• 45 dB typical reverse isolation (device level) at
900 MHz, VCC = 2.7 V
• 4.7 mA typical bias current at VCC = 2.7 V
• 2.7 to 5.0 V supply
MBC13916
General Purpose SiGe:C RF
Cascode Low Noise Amplifier
Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Ordering Information . . . . . . . . . . . . . . . . . . . 2
3 Electrical Characteristics . . . . . . . . . . . . . . . 2
4 Noise Parameters . . . . . . . . . . . . . . . . . . . . . 12
5 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Product Documentation . . . . . . . . . . . . . . . . 14
Ordering Information
MBC13916 Technical Data, Rev. 2.2
2Freescale Semiconductor
• Industry standard SOT-343R package
• Device weight = 0.00642 g (typical)
• Available only in tape and reel packaging
• Available only in a lead free version (device number MBC13916NT1) (Refer to Table 1.)
Figure 1. Functional Block Diagram
2 Ordering Information
Table 1 provides additional details on MBC13916 orderable parts.
3 Electrical Characteristics
Table 1. Orderable Parts Details
Device Operating Temp
Range (TA.) Package Lead Frame RoHS
Compliant PB-Free MSL
Level Solder
Temp
MBC13916T1 -40° to 85° C Tape and Reel Pb Plate - No - -
MBC13916NT1 -40° to 85° C Tape and Reel Pb Free Yes Yes 1 260° C
Table 2. Recommended Operating Conditions
Characteristic Symbol Min Typ Max Unit
RF Frequency fRF 100 -2500 MHz
Supply Voltage VCC 2.7 -5.0 Vdc
Table 3. Maximum Ratings
Ratings Symbol Value Unit
Supply Voltage VCC 6.0 Vdc
RF Input Power PRF 10 dBm
RF Out
RF In
Gnd
Gnd
2
1 3
4
(SOT-343R package)
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 3
Power Dissipation PDIS 100 mW
Supply Current ICC 20 mA
Thermal Resistance, Junction to Case RθJC 400 °C/W
Storage Temperature Range Tstg -65 to 150 °C
Note: Maximum Ratings and ESD
1. Maximum Ratings are those v alues beyond which damage to the de vice may occur. Functional operation should be
restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤550 V and Machine Model (MM) ≤50 V.
Additional ESD data available upon request.
Table 4. Device Level Characteristics
(VCC = 2.7 V, TA = 25° C, measured in S-parameter test fixture, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Insertion Gain
f = 900 MHz
f = 1900 MHz
|S21|2
-
-16.5
10 -
-
dB
Maximum Stable Gain and/or Maximum Available Gain
[Note 1]
f = 900 MHz
f = 1900 MHz
MSG, MAG
-
-24.5
14.3 -
-
dB
Minimum Noise Figure [Note 2]
f = 900 MHz
f = 1900 MHz
NFmin -
-0.9
1.9 -
-
dB
Output Third Order Intercept Point [No te 3]
f = 900 MHz
f = 1900 MHz
OIP3 -
-13
9-
-
dBm
Reverse Isolation
f = 900 MHz
f = 1900 MHz
|S12|2
-
--45
-31 -
-
dB
Note: 1. Maximum A vailable Gain and Maximum Stable Gain are defined by the K factor as follows:
, if K > 1, , if K < 1
2. De vice matched for best noise figure.
3. Zout matched for optimum IP3.
Table 3. Maximum Ratings
Ratings Symbol Value Unit
MAG S21
S12
---------- K K21–±
⎝⎠
⎛⎞
=MSG S21
S12
----------
=
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
4Freescale Semiconductor
Figure 2. GUmax versus Frequency Figure 3. Output Power versus Input Power
Figure 4. Output Power versus Input Power Figure 5. Supply Current versus Input Power
Figure 6. Supply Current versus Input Power Figure 7. Minimum Noise Figure and Associated Gain
versus Frequency
MAXIMUM UNILATERAL GAIN (dB)
40
0
f, FREQ UE NCY (GHz)
VCC = 5.0 V
3.9 V
3.3 V
2.7 V
0.5 1.0 1.5 2.0 2.5 3.0
35
30
25
20
15
10
5.0
0
3.9 V
P
out
, OUTPUT POWER (dBm)
15
-30 Pin, INPUT POWER (dBm)
f = 900 MHz
VCC = 5.0 V
3.3 V 2.7 V
-25 -20 -15 -10 -5.0 0
10
5.0
0
-5.0
-10
-15
P
out
, OUTPUT POWER (dBm)
15
-30 Pin, INPUT POWER (dBm)
f = 1900 MHz VCC = 5.0 V
3.9 V
2.7 V
3.3 V
-25 -20 -15 -10 -5.0 0
10
5.0
0
-5.0
-10
-15
-20
14
-30
Pin, INPUT POWER (dBm)
f = 900 MHz
I
CC
, SUPPLY CURRENT (mA)
VCC = 5.0 V
3.9 V
3.3 V
2.7 V
-25 -20 -15 -10 -5.0 0
12
10
8.0
6.0
4.0
2.0
0
I
CC
, SUPPLY CURRENT (mA)
16
-30
Pin, INPUT POWER (dBm)
f = 1900 MHz
VCC = 5.0 V
3.9 V
3.3 V
2.7 V
-25 -20 -15 -10 -5.0 0
14
12
10
8.0
6.0
4.0
2.0
00.5
1
1.5
2
2.5
3
0.500 1.000 1.500 2.000 2.500
f, Frequency (GHz)
NFmin (dB
)
5
10
15
20
25
30
Associated Gain (dB)
Vcc = 2.7 V
Vcc = 3.3 V
Vcc = 5.0 V
Vcc = 2.7 V
Vcc = 3 .3 V
Vcc = 5.0 V
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 5
3.1 Applications Circuits
Figures 8 and 9 show the 900 MHz applications circuit configuration and printed circuit board. The 1.9
GHz application configuration circuit and printed circuit board are shown in Figures 10 and 11. Tables 5
and 6 represent the electrical characteristics for the tested 900 MHz and 1.9 GHz application circuits. The
bill of materials is listed in Table 7.
Figure 8. 900 MHz Applications Circuit Configuration
Figure 9. 900 MHz Printed Circuit Board
Table 5. Electrical Characteristics
(VCC = 2.7 V, TA = 25° C, fRF = 900 MHz, Tested in Circuit Shown in Figure 8, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Small Signal Gain S21 17 19 21 dB
Noise Figure NF -1.25 -dB
Power Output at 1.0 dB Gain Compression P1dB 02.5 -dBm
Output 3rd Order Intercept Point OIP3 -11 -dBm
2
13
4
RF Out
RF In
L2
10.0 nH
C4
1.5 pF
L1
6.8 nH
C1
47 pf
Vcc
C2
.01µf
C3
100 pf
C5
3 pF
C1
C2
C3
C4
C5
L1 L2
Q1
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
6Freescale Semiconductor
Figure 10. 1.9 GHz Application Configuration Circuit
Figure 11. 1.9 GHz Printed Circuit Board
Reverse Isolation S12 --42 -dB
Supply Current ICC 3.8 4.7 5.6 mA
Table 6. Electrical Characteristics
(VCC = 2.7 V, TA = 25°C, fRF = 1.9 GHz, Tested in Circuit Shown in Figure 10, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Small Signal Gain S21 9.5 11.5 13.5 dB
Noise Figure NF -2.1 -dB
Power Output at 1.0 dB Gain Compression P1dB --4.0 -dBm
Output 3rd Order Intercept Point OIP3 -5.5 -dBm
Table 5. Electrical Characteristics
(VCC = 2.7 V, TA = 25° C, fRF = 900 MHz, Tested in Circuit Shown in Figure 8, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
2
13
4
RF Out
RF In
L2
10 nH
C4
2.7 pF
L1
3.3 nH
C1
3.3 pf
Vcc
C2
.01µf
C3
100 pf
L3
5.6 nH
C1
C2
C3 C4
L3
L1 L2
Q1
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 7
Reverse Isolation S12 --28 -dB
Supply Current ICC 3.8 4.7 5.6 mA
Table 7. Bill of Materials1
1All components are RoHS compliant.
Component Value Case Manufacturer Comments
900 MHz Figure 8
C1 47 pF 0402 Murata DC Block
C2 .01 uF 0402 Murata Low freq bypass to improve IP3
C3 100 pF 0402 Murata RF bypass
C4 1.5 pF 0402 Murata DC block, Output match
C5 3.0 pF 0402 Murata Output match, S22 improvement
L1 6.8 nH 0402 Toko Input match
L2 10.0 nH 0402 Toko DC Feedthrough, Output match
Q1 MBC13916 SOT343R Freescale SiGe cascode amp
1.9 GHz Figure 10
C1 3.3 pF 0402 Murata DC Block, Input match
C2 .01 uF 0402 Murata Low freq bypass to improve IP3
C3 100 pF 0402 Murata RF bypass
C4 2.7 pF 0402 Murata DC block, Output match
L1 3.3 nH 0402 Murata Input match
L2 10 nH 0402 Toko DC Feedthrough, Output match
L3 5.6 nH 0402 Toko Output match
Q1 MBC13916 SOT343R Freescale SiGe cascode amp
Table 6. Electrical Characteristics (continued)
(VCC = 2.7 V, TA = 25°C, fRF = 1.9 GHz, Tested in Circuit Shown in Figure 10, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
8Freescale Semiconductor
Table 8. Scattering Parameters
(VCC = 2.7 V, 50 Ω System)
f
(MHz)
S11 S21 S12 S22
|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ
100 0.829 -11 11.98 165 0.001 17 0.955 -4
200 0.798 -21 11.43 152 0.002 47 0.957 -7
300 0.753 -31 10.69 139 0.002 55 0.956 -11
400 0.701 -39 10.12 128 0.003 56 0.955 -14
500 0.648 -46 9.28 118 0.003 51 0.955 -18
600 0.599 -53 8.66 108 0.004 49 0.954 -22
700 0.554 -58 7.95 98 0.004 41 0.947 -26
800 0.518 -61 7.33 90 0.004 24 0.941 -30
900 0.485 -65 6.83 82 0.004 15 0.933 -34
1000 0.458 -67 6.23 74 0.004 -4 0.926 -38
1100 0.438 -69 5.78 67 0.004 -28 0.915 -43
1200 0.426 -71 5.39 60 0.005 -50 0.902 -46
1300 0.417 -72 4.97 52 0.006 -74 0.893 -51
1400 0.414 -73 4.59 46 0.008 -93 0.879 -54
1500 0.415 -74 4.31 39 0.011 -106 0.868 -58
1600 0.421 -75 3.99 32 0.014 -115 0.851 -62
1700 0.430 -76 3.66 25 0.018 -125 0.835 -66
1800 0.441 -78 3.43 19 0.022 -131 0.818 -70
1900 0.455 -80 3.16 12 0.027 -139 0.803 -73
2000 0.474 -82 2.93 50.033 -146 0.777 -77
2100 0.490 -85 2.70 -1 0.039 -152 0.761 -81
2200 0.504 -88 2.48 -8 0.045 -159 0.735 -85
2300 0.524 -92 2.27 -14 0.052 -163 0.707 -89
2400 0.542 -95 2.09 -21 0.059 -169 0.683 -93
2500 0.559 -98 1.90 -28 0.067 -175 0.651 -98
2600 0.572 -103 1.70 -34 0.075 180 0.624 -102
2700 0.587 -106 1.56 -40 0.083 174 0.593 -107
2800 0.603 -110 1.40 -48 0.091 169 0.562 -111
2900 0.610 -114 1.26 -55 0.098 163 0.533 -116
3000 0.613 -118 1.11 -60 0.105 160 0.501 -120
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 9
Table 9. Scattering Parameters
(VCC = 3.0 V, 50 Ω System)
f
(MHz)
S11 S21 S12 S22
|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ
100 0.812 -11 13.42 165 0.001 11 0.954 -3
200 0.778 -21 12.73 151 0.001 50 0.955 -7
300 0.731 -30 11.82 138 0.002 58 0.956 -11
400 0.677 -38 11.10 127 0.003 50 0.954 -14
500 0.623 -44 10.12 116 0.003 51 0.954 -18
600 0.575 -50 9.37 107 0.003 43 0.952 -22
700 0.533 -54 8.56 98 0.003 30 0.945 -26
800 0.499 -57 7.85 90 0.004 24 0.937 -30
900 0.470 -59 7.29 82 0.004 80.930 -34
1000 0.448 -61 6.63 74 0.003 -11 0.923 -38
1100 0.433 -63 6.14 67 0.004 -38 0.911 -42
1200 0.423 -64 5.72 60 0.005 -58 0.900 -46
1300 0.418 -65 5.27 53 0.006 -77 0.891 -50
1400 0.421 -66 4.87 47 0.008 -96 0.878 -54
1500 0.425 -67 4.56 40 0.011 -108 0.868 -58
1600 0.432 -68 4.23 34 0.014 -120 0.852 -61
1700 0.444 -70 3.89 27 0.018 -126 0.838 -65
1800 0.459 -72 3.63 21 0.022 -133 0.822 -69
1900 0.473 -74 3.35 15 0.027 -140 0.809 -73
2000 0.490 -77 3.12 80.033 -147 0.784 -77
2100 0.509 -80 2.87 20.039 -152 0.769 -80
2200 0.527 -83 2.64 -5 0.045 -159 0.744 -84
2300 0.545 -86 2.42 -11 0.051 -163 0.717 -88
2400 0.560 -90 2.23 -17 0.059 -170 0.694 -92
2500 0.579 -94 2.03 -24 0.067 -175 0.663 -97
2600 0.594 -98 1.82 -30 0.075 -180 0.637 -101
2700 0.606 -101 1.68 -36 0.083 175 0.607 -105
2800 0.620 -105 1.50 -43 0.090 169 0.576 -110
2900 0.630 -110 1.35 -50 0.097 164 0.548 -114
3000 0.636 -113 1.19 -55 0.105 160 0.516 -119
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
10 Freescale Semiconductor
Table 10. Scattering Parameters
(VCC = 3.9 V, 50 Ω System)
f
(MHz)
S11 S21 S12 S22
|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ
100 0.796 -11 14.82 164 0.001 25 0.954 -3
200 0.760 -20 13.98 150 0.001 50 0.955 -7
300 0.711 -29 12.90 137 0.002 46 0.955 -11
400 0.655 -36 12.03 126 0.002 55 0.955 -14
500 0.602 -42 10.90 115 0.003 50 0.954 -18
600 0.556 -46 10.04 106 0.003 45 0.954 -22
700 0.517 -50 9.12 97 0.003 34 0.947 -26
800 0.487 -52 8.34 89 0.003 22 0.940 -30
900 0.463 -54 7.72 82 0.003 11 0.933 -34
1000 0.444 -56 7.02 74 0.003 -6 0.927 -38
1100 0.432 -57 6.49 67 0.003 -40 0.917 -42
1200 0.428 -58 6.03 61 0.005 -69 0.905 -46
1300 0.427 -59 5.55 53 0.006 -88 0.896 -50
1400 0.430 -60 5.13 48 0.008 -99 0.883 -53
1500 0.437 -61 4.81 41 0.011 -111 0.874 -57
1600 0.449 -62 4.45 35 0.014 -118 0.858 -61
1700 0.462 -64 4.09 29 0.018 -128 0.843 -64
1800 0.475 -66 3.83 23 0.022 -134 0.829 -68
1900 0.493 -69 3.53 17 0.027 -140 0.815 -72
2000 0.512 -72 3.28 10 0.032 -148 0.790 -76
2100 0.529 -75 3.03 40.038 -152 0.776 -79
2200 0.544 -78 2.79 -2 0.045 -159 0.752 -83
2300 0.565 -82 2.56 -8 0.051 -164 0.726 -87
2400 0.583 -85 2.37 -14 0.058 -169 0.704 -91
2500 0.599 -89 2.16 -21 0.067 -175 0.674 -96
2600 0.613 -93 1.94 -27 0.075 -179 0.648 -100
2700 0.629 -97 1.79 -32 0.083 175 0.621 -105
2800 0.643 -101 1.60 -39 0.091 170 0.589 -109
2900 0.650 -105 1.44 -46 0.098 164 0.562 -114
3000 0.653 -109 1.28 -51 0.105 160 0.531 -118
Electrical Characteristics
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 11
Table 11. Scattering Parameters
(VCC = 5.0 V, 50 Ω System)
f
(MHz)
S11 S21 S12 S22
|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ
100 0.719 -9 21.47 161 0.001 50.939 -3
200 0.678 -17 19.60 145 0.001 18 0.939 -7
300 0.628 -23 17.43 132 0.001 38 0.940 -10
400 0.579 -27 15.66 120 0.002 47 0.937 -14
500 0.540 -30 13.78 110 0.002 38 0.936 -18
600 0.512 -32 12.40 101 0.003 37 0.934 -22
700 0.492 -34 11.05 93 0.002 32 0.927 -26
800 0.480 -34 9.97 86 0.002 90.920 -30
900 0.472 -35 9.12 79 0.002 -14 0.914 -34
1000 0.470 -37 8.21 73 0.002 -54 0.908 -38
1100 0.473 -37 7.54 67 0.003 -75 0.899 -42
1200 0.478 -39 6.97 61 0.004 -90 0.890 -46
1300 0.484 -40 6.37 54 0.006 -101 0.884 -50
1400 0.496 -42 5.86 50 0.008 -114 0.875 -54
1500 0.509 -44 5.49 44 0.010 -120 0.871 -57
1600 0.521 -46 5.08 39 0.013 -128 0.858 -60
1700 0.535 -49 4.67 34 0.017 -133 0.848 -63
1800 0.552 -51 4.38 29 0.021 -139 0.838 -67
1900 0.570 -54 4.06 23 0.025 -144 0.829 -70
2000 0.587 -56 3.80 18 0.030 -150 0.807 -73
2100 0.604 -60 3.54 13 0.036 -154 0.795 -76
2200 0.621 -63 3.28 70.042 -160 0.772 -79
2300 0.643 -67 3.04 20.048 -164 0.746 -83
2400 0.658 -70 2.84 -4 0.056 -169 0.722 -87
2500 0.673 -74 2.61 -10 0.063 -175 0.687 -91
2600 0.690 -78 2.36 -16 0.071 -179 0.657 -96
2700 0.705 -82 2.19 -21 0.079 176 0.623 -101
2800 0.715 -86 1.97 -27 0.088 170 0.588 -107
2900 0.720 -91 1.78 -33 0.094 164 0.556 -113
3000 0.723 -94 1.57 -38 0.101 161 0.523 -119
Noise Parameters
MBC13916 Technical Data, Rev. 2.2
12 Freescale Semiconductor
4Noise Parameters
Noise parameters for the MBC13916 are represented in Table 12.
Table 12. Noise Parameters
Freq Fmin Gamma Opt Rn Ga
MHz dB Mag Angle dB
(VCC = 2.7 V, Icc = 4.7 mA)
0.500 0.92 0.14 47.6 0.18 29.08
0.700 0.92 0.14 64.2 0.14 26.61
0.900 0.96 0.14 79.6 0.12 24.22
1.000 0.99 0.14 86 0.11 23.05
1.500 1.37 0.15 119.4 0.11 17.5
1.900 1.88 0.17 140.3 0.15 13.4
2.000 2.03 1.8 144.9 0.16 12.43
2.400 2.79 0.2 160.4 0.22 8.71
Vcc = 3.3 V, Icc = 6 mA
0.500 0.96 0.13 35.5 0.19 29.98
0.700 0.97 0.13 55.3 0.15 27.34
0.900 1 0.12 75.1 0.13 24.81
1.000 1.05 0.12 85.1 0.12 23.59
1.500 1.39 0.13 135.7 0.12 17.91
1.900 1.84 0.14 176.5 0.16 13.88
2.000 1.97 0.15 -173.9 0.17 12.95
2.400 2.62 0.17 -135.5 0.24 9.48
Vcc = 5 V, Icc = 10.5 mA
0.500 1.07 0.11 0.2 0.21 32.36
0.700 1.11 0.1 28,8 0.18 29.19
0.900 1.18 0.09 61.3 0.15 26.22
1.000 1.21 0.08 78.8 0.14 24.87
1.500 1.46 0.07 179.8 0.13 18.81
1.900 1.74 0.07 -83.2 0.19 14.98
2.000 1.82 0.07 -56.7 0.22 14.17
2.400 2.19 0.09 58.2 0.2 11.47
Packaging
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 13
5 Packaging
Figure 12. Outline Dimensions for SOT-343R
(Case 1404-01, Issue 0)
Product Documentation
MBC13916 Technical Data, Rev. 2.2
14 Freescale Semiconductor
6 Product Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.
Definitions of these types are available at: http://www.freescale.com on the documentation page.
Table 13 summarizes revisions to this document since the previous release (Rev. 2.1).
Table 13. Revision History
Location Revision
Table 4 Device Level Characteristi cs Updated Output Third Order Intercept Point.
Figure 8 900 MHz Applications Circuit Confi guration Updated.
Figure 9 1.9 GHz Application Configuration Circuit Replaced.
Table 5 Electrical Characteristics Updated Output 3rd Order Intercept Point.
Figure 10 1.9 GHz Application Configu ration Circuit Updated.
Table 7 Bill of Materials Updated through out the table.
Figure 12 Outline Dimensions for SOT-343R Updated.
NOTES
MBC13916 Technical Data, Rev. 2.2
Freescale Semiconductor 15
Do c um e n t N u mb e r: MBC13916/D
Rev. 2.2
05/2006
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