PD - 96192A IRG6I330UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package Key Parameters VCE min VCE(ON) typ. @ IC = 28A IRP max @ TC= 25C TJ max 330 1.30 250 150 V V A C C E C G G TO-220AB Full-Pak E n-channel G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25C IC @ TC = 100C IRP @ TC = 25C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Units 30 28 V A 15 250 c Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw Max. 43 17 W 0.34 -40 to + 150 W/C C x 300 x 10lb in (1.1N m) N Thermal Resistance Parameter RJC www.irf.com Junction-to-Case d Typ. Max. Units --- 2.9 C/W 1 09/11/09 IRG6I330UPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter BVCES V(BR)ECS Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage VCES/TJ Breakdown Voltage Temp. Coefficient VCE(on) Static Collector-to-Emitter Voltage Conditions Min. Typ. Max. Units e 330 30 --- --- --- --- --- --- 0.29 1.13 --- --- --- 1.30 1.43 1.55 --- --- --- 1.80 2.38 --- --- V V VGE = 0V, ICE = 1 mA VGE = 0V, ICE = 1 A V/C Reference to 25C, ICE = 1mA VGE = 15V, ICE = 15A VGE = 15V, ICE = 28A V VGE = 15V, ICE VGE = 15V, ICE e e = 40A e = 70A e = 120A e VGE = 15V, ICE VGE = 15V, ICE = 70A, TJ = 150C e VGE(th) Gate Threshold Voltage --- 2.6 2.10 --- --- 5.0 VGE(th)/TJ ICES Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current --- --- -12 2.0 --- --- 10 40 Gate-to-Emitter Forward Leakage --- --- 150 --- --- mV/C VCE = 330V, VGE = 0V 20 VCE = 330V, VGE = 0V, TJ = 100C --- A VCE = 330V, VGE = 0V, TJ = 125C 200 VCE = 330V, VGE = 0V, TJ = 150C --- 100 nA Gate-to-Emitter Reverse Leakage Forward Transconductance --- --- --- 94 -100 --- VGE = 30V VGE = -30V S Total Gate Charge Gate-to-Collector Charge --- --- 86 36 --- --- VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15V Turn-On delay time Rise time --- --- 39 32 --- --- Turn-Off delay time Fall time --- --- 120 55 --- --- Turn-On delay time Rise time --- --- 37 33 --- --- Turn-Off delay time Fall time --- --- 159 95 --- --- Shoot Through Blocking Time 100 --- --- --- 943 --- --- 1086 --- 75 --- 4.5 --- IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE ESD Energy per Pulse Human Body Model Machine Model Cies Coes Cres LC Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- Internal Collector Inductance --- V nC Internal Emitter Inductance --- e IC = 25A, VCC = 196V ns RG = 10, L=200H, LS= 150nH TJ = 25C IC = 25A, VCC = 196V ns RG = 10, L=200H, LS= 150nH TJ = 150C ns VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V J VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 100C Class 2 (Per JEDEC standard JESD22-A114) Class B (Per EIA/JEDEC standard EIA/JESD22-A115) VGE = 0V 2275 --- 108 --- pF VCE = 30V = 1.0MHz, nH LE VCE = VGE, ICE = 500A 7.5 --- See Fig.13 Between lead, 6mm (0.25in.) from package and center of die contact Notes: Half sine wave with duty cycle = 0.05, ton=2sec. R is measured at TJ of approximately 90C. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRG6I330UPbF 500 500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 300 400 300 ICE (A) ICE (A) 400 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 200 200 100 100 0 0 0 2 4 6 8 10 0 2 4 VCE (V) 10 Fig 2. Typical Output Characteristics @ 75C 500 500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 400 300 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 400 ICE (A) ICE (A) 8 VCE (V) Fig 1. Typical Output Characteristics @ 25C 200 100 300 200 100 0 0 0 2 4 6 8 10 0 2 4 VCE (V) 500 8 10 Fig 4. Typical Output Characteristics @ 150C 25 IC = 25A T J = 25C 400 6 VCE (V) Fig 3. Typical Output Characteristics @ 125C 20 TJ = 150C 300 VCE (V) ICE (A) 6 200 100 15 TJ = 25C TJ = 150C 10 5 0 0 0 2 4 6 8 10 12 14 16 VGE (V) Fig 5. Typical Transfer Characteristics www.irf.com 18 5 10 15 20 VGE (V) Fig 6. VCE(ON) vs. Gate Voltage 3 IRG6I330UPbF 30 260 ton= 2s Duty cycle <= 0.05 Half Sine Wave 240 25 Repetitive Peak Current (A) 220 IC (A) 20 15 10 5 200 180 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 0 150 25 T C (C) 75 100 125 150 Case Temperature (C) Fig 7. Maximum Collector Current vs. Case Temperature Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1100 1100 V CC = 240V L = 220nH C = variable 1000 950 900 850 L = 220nH C = 0.4F 1000 100C Energy per Pulse (J) 1050 Energy per Pulse (J) 50 25C 800 750 700 100C 900 800 25C 700 600 650 600 500 150 160 170 180 190 200 210 220 230 195 200 205 210 215 220 225 230 235 240 IC, Peak Collector Current (A) VCC, Collector-to-Supply Voltage (V) Fig 9. Typical EPULSE vs. Collector Current Fig 10. Typical EPULSE vs. Collector-to-Supply Voltage 1400 1000 V CC = 240V 100 10sec 1000 100sec C= 0.3F 800 C= 0.2F IC (A) Energy per Pulse (J) C= 0.4F L = 220nH t = 1s half sine 1200 1msec 10 600 1 400 Tc = 25C Tj = 150C Single Pulse 200 0.1 25 50 75 100 125 TJ, Temperature (C) Fig 11. EPULSE vs. Temperature 4 150 1 10 100 1000 VCE (V) Fig 12. Forrward Bias Safe Operating Area www.irf.com IRG6I330UPbF 100000 VGE, Gate-to-Emitter Voltage (V) C oes = C ce + Cgc 10000 Capacitance (pF) 16 VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc Cies 1000 Coes 100 IC = 25A 14 12 V CES = 240V V CES = 150V 10 V CES = 60V 8 6 4 2 Cres 0 10 0 50 100 150 0 200 20 40 60 80 100 Q G, Total Gate Charge (nC) VCE, Collector-toEmitter-Voltage(V) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 J 0.01 0.01 0.001 1E-006 0.0001 J 1 R2 R2 R3 R3 R4 R4 C 2 1 3 2 3 4 4 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 R1 R1 Ri (C/W) i (sec) 0.11889 0.000045 0.35666 0.001841 1.09829 0.128114 1.32616 2.452 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRG6I330UPbF A RG C DRIVER PULSE A L VCC B RG PULSE B Ipulse DUT tST Fig 16b. tst Test Waveforms Fig 16a. tst and EPULSE Test Circuit VCE Energy L IC Current DUT 0 VCC 1K Fig 16c. EPULSE Test Waveforms 6 Fig. 17 - Gate Charge Circuit (turn-off) www.irf.com IRG6I330UPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information (;$03/( 7+,6,6$1,5),* :,7+$66(0%/< /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(. 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 ,5),* . '$7(&2'( <($5 :((. /,1(. TO-220AB Full-Pak package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without Data and specifications subject to change without notice. limitation, we have not qualified our product for medical use or This product has been designed for the Industrial market. applications involving hi-reliability applications. Customers are Qualification Standards can be found on IR's Web site. encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2009 www.irf.com 7