TO-92 Plastic-Encapsulate Transistors i .. 2N5551 TRANSISTOR(NPN) mea a) Oo Q o TO-92 Pem: 0.625W (Tamb=25C) : 1.EMITTER | 2.BASE | | 3.COLLECTOR Vierjceo: 180V | id storage junction temperature range oz NO Ta, Tstg: -55C to + 150C ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Collector-base breakdown voitage V(BR)CBO Ic= 100 1A, le=0 180 Vv Collector-emitter breakdown voltage V(BR)CEO ic= 1 mA, Is=0 160 Vv Emitter-base breakdown voltage V(BR)EBO le= 10 n A, Ic=0 6 Vv Collector cut-off current IcBo Ves= 120 V, le=0 0.05 nA Emitter cut-off current lego Vep= 4 V, Ic=0 0.05 bA heed) Vce= 5 V, ic= 1 mA 80 DC current gain hre(2) Vce= 5 V, ic= 10 mA 80 250 Rees) Vce= 5 V, ic= 50 mA 50 Collector-emitter saturation voltage VCEsat tc= 50 mA, ls= 5 mA 0.5 Vv Base-emitter saturation voltage VBEsat ic= 50 mA, la= 5 mA 4 Vv Vce= 5 V, ic= 10 mA Transition frequency : fr 100 MHz f =30MHz CLASSIFICATION OF here, Rank A B c Range 80-160 120-180 150-250 10 hre DC CURRENT GAIN Vce COLLECTOR-EMITTER VOLTAGE (VOLTS) MCC Typical Characteristics 2N5551 500 300 aoe. Vee= 1.0V 200 Tu =125 Vce= 5.0V 250 100 -55 50 30 20 10 7.0 5.0 0.1 0.2 0.3 05 07 1.0 2.0 3.0 50 70 10 20 30 50 70 =100 Ic COLLECTOR CURRENT (mA) DC Current Gain 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 is BASE CURRENT (mA) Collector Saturation Region