SEMITOP®3
3-phase bridge rectifier+
series thyristor
SK 60 DTA
Preliminary Data
Features
 
  
   
   
   
 ! " 
#! !   $%&& '
  
Typical Applications
( 
) 
* 
DTA
'#(+ '##+, '#+ ./ %$ 0
' ' */ 1& 2
3&& 1&& (4 %& *0 &1
$5&& $6&& (4 %& *0 $6
$7&& $%&& (4 %& *0 $%
Characteristics */ 682   
Symbol Conditions Values Units
.*(/ 1&29 .:  %$ 0
.*0' : $1&29 */ 68 1& 2  " 1% ;3 0
.<0' : $1&29 */ 68 1& 2   %8 ;8 0
.*(+=.<(+ *!> / 68 $68 29 $&  $8&& $58& 0
.? *!> / 68 $68 29 1,5 ::: $&  $$68& 3$&& 0?
* @;&,:::A$68 2
* , $& 6%& 2
Thyristor
!= *!> / $68 2 $&&& '=B
= *!> / $68 29 / / C 8& 0=B
D*!> / $68 29 ": $6& B
.*!> / 68 29 ": = : $&& = 6&& 0
.)*!> / 68 29 # / 55 E9 ": = : 6&& = 8&& 0
'**!> / 68 29 .*/ 6&& 09 : $,1 '
'** *!> / $68 2 : &,3 '
**!> / $68 2 : ;,8 E
.9 .# *!> / $68 29 ' / '#+9 '# / '##+ : 6& 0
#>@ :  " &,% 4=F
*!> @ ;& ::: A $68 2
' * *!> / 68 29 :: 6 '
. * *!> / 68 29 :: $&& 0
' *!> / $68 29 :: &,68 '
. *!> / $68 29 :: 8 0
Diode
'<*!> / 68 29 .</ 78 09 : $,;8 '
'* *!> / $68 2 &,1 '
**!> / $68 2 ;,8 E
.# *!> / $68 29 '# / '##+ 6 0
#>@   $ 4=F
*!> @;&:::A$8& 2
Mechanical data
' : : 8& C9 :::9 $ = $  5&&& 68&& '
+$ D 6,8 G
5&
 (H+.*IJ5 * ;8
SK 60 DTA
1 14-10-2004 SCT © by SEMIKRON
Fig. 1 Power dissipation per module vs. output bridge current Fig. 2 Transient thermal impedance vs time
Fig. 3a Thyristor On-state characteristics Fig. 3b Rect. Diode On-state characteristics
Fig. 4 Surge overload current vs. time
Fig. 5 Gate trigger characteristics
SK 60 DTA
2 14-10-2004 SCT © by SEMIKRON
Dimensions in mm
(K H(*H )H.0+H*H# <# *H ()H# I.G( 0G *H +KG*.G I.G( .G *H IL 6 
 *;8
*0
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SK 60 DTA
3 14-10-2004 SCT © by SEMIKRON