High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M 1700 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 16 A IC90 TC = 90C 10 A ICM TC = 25C, 1 ms 40 A SSOA (RBSOA) VGE = 15 V, TVJ = 125C, RG = 33 Clamped inductive load 40 1350 A V tSC (SCSOA) VGE = 15 V, VCES = 1200V, TJ = 125C RG = 33 non repetitive 10 s PC TC = 25C 190 W ICM = VCES = -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Mounting torque (M3) (TO-247) Weight E G G = Gate, E = Emitter, z z C z 1.13/10Nm/lb.in. z z z Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. = 250 A, VGE = 0 V = 250 A, VCE = VGE BVCES VGE(th) IC IC ICES VCE = 0.8 VCES VGE = 0 V; Note 1 IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = IC90, VGE = 15 V Note 2 1700 2.5 TJ = 125C TJ = 125C 5.0 5.5 V V 50 1.5 A mA 100 nA 6.0 V V E C = Collector, TAB = Collector Monolithic fast reverse diode High Blocking Voltage JEDEC TO-268 surface mount and JEDEC TO-247 AD packages Low switching losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications z z z z AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Capacitor discharge circuits Advantages z z z z (c) 2003 IXYS All rights reserved C (TAB) C Features 260 g g (TAB) TO-247 AD (IXBH) z 6 4 V A V ns G C TO-247 TO-268 = 1700 = 16 = 6.0 = 50 TO-268 (IXBT) 300 Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s Md VCES IC25 VCE(sat) tfi(typ) Lower conduction losses than MOSFETs High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS98707A(01/03) IXBH 16N170A IXBT 16N170A Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % 8 12.5 S P 1400 pF 90 pF Cres 31 pF Qg 65 nC 13 nC 22 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25C 15 ns tri IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 25 ns td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 160 250 ns 50 100 ns 1.2 2.5 mJ 15 ns 28 ns 2.0 mJ 220 ns 150 ns 2.6 mJ RthJC RthCK TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.65 K/W (TO-247) Reverse Diode 0.25 K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF t = IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% IRM t rr IF vR = IC90, VGE = 0 V, -diF/dt = 50 A/us = 100V 5.0 10 360 V A ns Min Recommended Footprint Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 s, duty cycle 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343