© 2003 IXYS All rights reserved
VCES = 1700 V
IC25 =16A
VCE(sat) = 6.0 V
tfi(typ) =50ns
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
GCE
TO-247 AD (IXBH)
Features
zMonolithic fast reverse diode
zHigh Blocking Voltage
zJEDEC TO-268 surface mount and
JEDEC TO-247 AD packages
zLow switching losses
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zAC motor speed control
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
zCapacitor discharge circuits
Advantages
zLower conduction losses than MOSFETs
zHigh power density
zSuitable for surface mounting
zEasy to mount with 1 screw,
(isolated mounting screw hole)
DS98707A(01/03)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 µA, VGE = 0 V 1700 V
VGE(th) IC= 250 µA, VCE = VGE 2.5 5.5 V
ICES VCE = 0.8 VCES 50 µA
VGE = 0 V; Note 1 TJ = 125°C 1.5 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 6.0 V
Note 2 TJ = 125°C 5.0 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1700 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1700 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C16A
IC90 TC= 90°C10A
ICM TC= 25°C, 1 ms 40 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 33 ΩICM =40 A
(RBSOA) Clamped inductive load VCES = 1350 V
tSC VGE = 15 V, VCES = 1200V, TJ = 125°C
(SCSOA) RG = 33 Ω non repetitive 10 µs
PCTC= 25°C 190 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum Lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering SMD devices for 10 s 260 °C
MdMounting torque (M3) (TO-247) 1.13/10Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
TO-268 (IXBT)
(TAB)
G
E
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH 16N170A
IXBT 16N170A
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 AD Outline
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 8 12.5 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 1400 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 90 pF
Cres 31 pF
Qg65 nC
Qge IC= IC90, VGE = 15 V, VCE = 0.5 VCES 13 nC
Qgc 22 nC
td(on) 15 ns
tri 25 ns
td(off) 160 250 ns
tfi 50 100 ns
Eoff 1.2 2.5 mJ
td(on) 15 ns
tri 28 ns
Eon 2.0 mJ
td(off) 220 ns
tfi 150 ns
Eoff 2.6 mJ
RthJC 0.65 K/W
RthCK (TO-247) 0.25 K/W
Reverse Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF= IC90, VGE = 0 V, Pulse test, 5.0 V
t< 300 us, duty cycle d < 2%
IRM IF= IC90, VGE = 0 V, -diF/dt = 50 A/us 10 A
trr vR= 100V 360 ns
Inductive load, TJ = 125°°
°°
°C
IC= IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
Inductive load, TJ = 25°°
°°
°C
IC= IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
Min Recommended Footprint
TO-268 Outline
IXBH 16N170A
IXBT 16N170A
Notes: 1. Device must be heatsunk for high
temperature leakage current
measurements to avoid thermal
runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤
2 %.
