© 2000 IXYS All rights reserved 1 - 1
Features
●International standard package
●Planar passivated chips
●Very short recovery time
●Extremely low switching losses
●Low IRM-values
●Soft recovery behaviour
●Epoxy meets UL 94V-0
Applications
●Antiparallel diode for high frequency
switching devices
●Antisaturation diode
●Snubber diode
●Free wheeling diode in converters
and motor control circuits
●Rectifiers in switch mode power
supplies (SMPS)
●Inductive heating
●Uninterruptible power supplies (UPS)
●Ultrasonic cleaners and welders
Advantages
●Avalanche voltage rated for reliable
operation
●Soft reverse recovery for low
EMI/RFI
●Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
TO-220 AB
CA
A
A C A
A = Anode, C = Cathode, TAB = Cathode
C (TAB)
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
DSEC 10-02A
IFAV = 2x 5 A
VRRM = 200 V
trr = 25 ns
VRSM VRRM Type
V V
200 200 DSEC 10-02A
Symbol Conditions Maximum Ratings
IFRMS 35 A
IFAVM TC = 160°C; rectangular, d = 0.5 5 A
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM tbd A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 80 A
EAS TVJ = 25°C; non-repetitive 0.5 mJ
IAS = 2 A; L = 180 µH
IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A
TVJ -55...+175 °C
TVJM 175 °C
Tstg -55...+150 °C
Ptot TC = 25°C 60 W
Mdmounting torque 0.4...0.6 Nm
Weight typical 2 g
Symbol Conditions Characteristic Values
typ. max.
IR①TVJ = 25°C VR= VRRM 50 mA
TVJ = 150°C VR= VRRM 0.2 mA
VF②IF = 5 A; TVJ = 150°C 0.81 V
TVJ = 25°C 1.23 V
RthJC 2.5 K/W
RthCH 0.5 K/W
trr IF = 1 A; -di/dt = 50 A/ms; 25 ns
VR = 30 V; TVJ = 25°C
IRM VR = 100 V; IF = 10 A; -diF/dt = 100 A/ms2.0A
TVJ = 100°C
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