TO-92 Plastic-Encapsulate Transistors Q\ SW BC368-25 TRANSISTOR(NPN) 82 TO-92 1.EMITTER 2.COLLECTOR 3.BASE 3 ot NO oS ne ew wo 4} ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) FEATURES Tu, Tstg: -55C to + 150C ligand storage junction temperature range Collector-base breakdown voltage V(BR)CBO ic= 100 n A, le=0 25 Vv Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA, Is=0 20 Vv Emitter-base breakdown voltage V(BR)EBO le= 100 A, Ic=0 5 Vv Collector cut-off current lcpa Vee= 25 V, le=0 10 nA Emitter cut-off current lego Vee= 5 V, Ic=0 10 HA hrea) Vece= 10 V, lc= 5 mA 50 BC368 85 375 DC current gain hre2) Vce= 1 V, c= 0.5 mA BC368-25 170 375 hre(3) Vce= 1 V, Io=1 MA 60 Collector-emitter saturation voltage VcEsat Ic= 1A, Ip= 100 mA 0.5 Vv Base-emitter voltage Vee Ic= 1A, Vce= 1 V 1 Vv Vce= 5 V, Ic= 10 mA / Transition frequency fr 65 MHz f =20MHz V, VOLTAGE (VOLTS) hee, CURRENT GAIN fy, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Typical Characteristics 200 ~_~ Q oS 50 20 1.0 0.8 0.6 0.4 0.2 20 50 100 200 Ic, COLLECTOR CURRENT (mA) Dc Current Gain Ty = 25C Vaesat @ Ioflg = 10 Vee @ Vee = 1.0V Veesat @ Io/la = 10 0 1.0 20 50 10 20 50 100 200 500 1000 300 200 100 70 30 ic, COLLECTOR CURRENT (mA) On Voltages 500 1000 10 20 50 100 200 Io, COLLECTOR CURRENT (mA) Current~Gain Bandwidth Product 500 1000 @yp, TEMPERATURE COEFFICIENT (mV/C) VcE, COLLECTOR VOLTAGE (VOLTS) C, CAPACITANCE (pF) BC368,-25 Ig = 10 mA 250 mA 0 0.01 0.02 0.0501 02 05 10 20 50 10 20 50 100 lg, BASE CURRENT (mA} Collector Saturation Region -2.8 1.0 20 5.0 10 20 50 100200 500 1000 Ic, COLLECTOR CURRENT (mA) Temperature Coefficient 160 120 80 40 Cobo Cobo 5.0 10 15 20 25 Cibo 1.0 20 3.0 4.0 5.0 Va, REVERSE VOLTAGE (VOLTS) Capacitance 83