PMV22EN,215\"\" - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

Logic-level compatible

Very fast switching

Trench MOSFET technology

1.3 Applications

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

PMV22EN

30 V, 5.2 A N-channel Trench MOSFET

Rev. 1 — 30 March 2011 Product data sheet

SOT23

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source

voltage Tamb =25°C --30V

VGS gate-source

voltage -20 - 20 V

IDdrain current VGS =10V; T

amb =25°C [1] --5.2A

Static characteristics

RDSon drain-source

on-state

resistance

VGS =10V; I

D= 5.2 A; pulsed;

tp≤300 µs; δ≤0.01; Tj=25°C - 1722mΩ

Product data sheet Rev. 1 — 30 March 2011 2 of 14

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

2. Pinning information

3. Ordering information

4. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

Table 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphi c sy mbol

1 G gate

SOT23 (TO-236AB)

2Ssource

3 D drain

mbb076

Table 3. Ordering information

Type number Package

Name Description Version

PMV22EN TO-236AB plastic surface-mounted package; 3 leads SOT23

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tamb =25°C - 30 V

VGS gate-source voltage -20 20 V

IDdrain current VGS =10V; T

amb =25°C [1] -5.2A

VGS =10V; T

amb = 100 °C [1] -3.3A

IDM peak drain current Tamb = 25 °C; single pulse; tp≤10 µs - 20 A

Ptot total power dissipation Tamb =25°C [2] - 510 mW

[1] - 930 mW

Tsp = 25 °C - 4170 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

ISsource current Tamb =25°C [1] - 930 mA

Product data sheet Rev. 1 — 30 March 2011 3 of 14

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

Fig 1. Normalized total power dissipation as a

function of ambient temperature Fig 2. Normalized continuous drain current as a

function of ambient temperature

IDM = single pul s e

(1) tp = 100 µs

(2) tp = 1 ms

(3) tp = 10 ms

(4) DC; Tsp = 25 °C

(5) tp = 100 ms

(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2

Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

Tamb (°C)

−75 17512525 75−25

017aaa001

120

Pder

(%)

Tamb (°C)

−75 17512525 75−25

017aaa002

120

Ider

(%)

017aaa152

10–1

102

(A)

10–2

VDS (V)

10–1 102

101

(1)

(2)

(3)

(4)

(5)

Limit RDSon = VDS/ID

(6)

Product data sheet Rev. 1 — 30 March 2011 4 of 14

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

5. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance

from junction to

ambient

in free air [1] - 207 245 K/W

[2] - 116 135 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

- 2030K/W

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 6 cm2

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa153

tp (s)

10–3 102103

10110–2 10–1

102

103

Zth(j-a)

(K/W)

0.75

0.5

0.33

0.25 0.2

0.1

0.05

0.02

0.01

duty cycle = 1

017aaa154

tp (s)

10–3 102103

10110–2 10–1

102

103

Zth(j-a)

(K/W)

0.75

0.5

0.33

0.25 0.2

0.1 0.05

0.02

0.01

duty cycle = 1

Product data sheet Rev. 1 — 30 March 2011 5 of 14

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=250µA; V

GS =0V; T

j=25°C 30--V

VGSth gate-source threshold

voltage ID=250µA; V

DS =V

GS; Tj=25°C 1 1.5 2.5 V

IDSS drain leakage current VDS =30V; V

GS =0V; T

amb =25°C --1µA

VDS =30V; V

GS =0V; T

amb = 150 °C - - 10 µA

IGSS gate leakage current VGS =20V; V

DS =0V; T

j= 25 °C - - 100 nA

VGS =-20V; V

DS =0V; T

j= 25 °C - - 100 nA

RDSon drain-source on-state

resistance VGS =10V; I

D= 5.2 A; pulsed;

tp≤300 µs; δ≤0.01; Tj=25°C - 1722mΩ

VGS =10V; I

D= 5.2 A; pulsed;

tp≤300 µs; δ≤0.01; Tj=150°C - 2734mΩ

VGS =4.5V; I

D= 4.5 A; pulsed;

tp≤300 µs; δ≤0.01; Tj=25°C - 2229mΩ

gfs forward

transconductance VDS =5V; I

D= 3 A; pulsed; tp≤300 µs;

δ≤0.01; Tj=25°C -12-S

Dynamic character istics

QG(tot) total gate charge ID=3A; V

DS =15V; V

GS =10V;

Tj=25°C - 8.6 13 nC

QGS gate-source charge - 1.2 - nC

QGD gate-drain charge - 1.3 - nC

Ciss input capacitance VGS =0V; V

DS =15V; f=1MHz;

Tj=25°C - 480 - pF

Coss output capacitance - 110 - pF

Crss reverse transfer

capacitance -52-pF

td(on) turn-on delay time VDS =15V; V

GS =10V; R

G(ext) =6Ω;

Tj=25°C; I

D=3A -4-ns

trrise time - 15 - ns

td(off) turn-off delay time - 100 - ns

tffall time - 40 - ns

Source-drain diode

VSD source-drain voltage IS= 0.93 A; VGS =0V; T

j= 25 °C - 0.72 1.2 V

Product data sheet Rev. 1 — 30 March 2011 6 of 14

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

Tj = 25 °C Tj = 25 °C; VDS = 5 V

(1) minimum values

(2) typical values

(3) maximum values

Fig 6. Outp ut characteristics: drain cur rent as a

function of drain-source voltage; typical values Fig 7. Su b-threshold drain current as a function of

gate-source voltage

Tj = 25 °C

(1) VGS = 2.5 V

(2) VGS = 2.6 V

(3) VGS = 2.8 V

(4) VGS = 3.0 V

(5) VGS = 4.5 V

(6) VGS = 10 V

ID = 5.3 A

(1) Tj = 150 °C

(2) Tj = 25 °C

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values Fig 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

VDS (V)

04312

017aaa155

(A)

VGS = 2.8 V

10 V

4.5 V

2.5 V

3 V

2.3 V

017aaa156

VGS (V)

0.0 3.02.01.0

10–4

10–5

10–3

(A)

10–6

(1) (3)(2)

ID (A)

161241410628

017aaa157

RDSon

(mΩ)

(1) (3)(2)

(4)

(5)

(6)

VGS (V)

210846

017aaa158

RDSon

(mΩ)

(1)

(2)

Product data sheet Rev. 1 — 30 March 2011 7 of 14

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

VDS > ID × RDSon

(1) Tj = 25 °C

(2) Tj = 150 °C

Fig 10. Transfer characteristics: drain curre nt as a

function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance as

a function of junctio n temperature; typical

values

ID = 0.25 mA; VDS = VGS

(1) maximum values

(2) typical values

(3) minimum values

f = 1 MHz; VGS = 0 V

(1) Ciss

(2) Coss

(3) Crss

Fig 12. Gate-source threshold voltage as a function of

junction temperature Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

VGS (V)

04312

017aaa159

(A)

(1) (2)

(1)

(2)

Tj (°C)

–60 180120060

017aaa160

1.0

1.4

1.8

0.6

Tj (°C)

–60 180120060

017aaa161

VGS(th)

(V)

(1)

(3)

(2)

017aaa162

VDS (V)

10–1 102

101

102

103

(pF)

(1)

(3)

(2)

Product data sheet Rev. 1 — 30 March 2011 8 of 14

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

ID = 3 A; VDS = 15 V; Tamb = 25 °C

Fig 14. Gate-source voltage as a function of gate

charge; typical values Fig 15. Gate charge waveform definitions

VGS = 0 V

(1) Tj = 150 °C

(2) Tj = 25 °C

Fig 16. Source current as a function of source-drain voltage; typical values

017aaa163

QG (nC)

0963

VGS

(V)

017aaa137

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

017aaa164

VSD (V)

0.0 1.20.80.4

(A)

(1) (2)

Product data sheet Rev. 1 — 30 March 2011 9 of 14

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

7. Package outline

Fig 17. Package outline SOT23 (TO-236AB)

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

Product data sheet Rev. 1 — 30 March 2011 10 of 14

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

8. Soldering

Fig 18. Reflow soldering footprint for SOT23 (TO-236AB)

Fig 19. Wave soldering footprint for SOT23 (TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 1 — 30 March 2011 11 of 14

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

9. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMV22EN v.1 20110330 Product data sheet - -

Product data sheet Rev. 1 — 30 March 2011 12 of 14

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

10. Legal information

10.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in this do cument may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

10.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

10.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability t owards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 30 March 2011 13 of 14

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to sell product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization fro m national authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omo tive use. It i s neit her qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applicati ons.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting f rom customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

10.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

11. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PMV22EN

30 V, 5.2 A N-channel Tren ch MO SFET

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 30 March 2011

Document identifier: PMV22EN

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

12. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9

8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

10 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .1 3

11 Contact information. . . . . . . . . . . . . . . . . . . . . .13