MJE2955T, 3055T
Complementary Power Transistors
Page 1 31/05/05 V1.0
Complementary Silicon Power Transistors are designed for use in general-purpose
amplifier and switching applications.
Features:
•Power dissipation-PD= 75W at TC= 25°C.
•DC current gain hFE = 20 (Minimum) at IC= 4.0A.
•VCE(sat) = 1.1V (Maximum) at IC= 4.0A, IB= 400mA.
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case).
PNP NPN
MJE2955T MJE3055T
TO-220
10 Ampere
Complemetary Silicon
Power Transistors
60 Volts
75 Watts
MJE2955T, 3055T
Complementary Power Transistors
Page 2 31/05/05 V1.0
Thermal Characteristic
Maximum Ratings
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1.67 °C/W
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 60
VCollector-Base Voltage VCBO 70
Emitter-Base Voltage VEBO 5.0
Collector Current-Continuous IC10
A
Base Current IB6.0
Total Power Dissipation at TC= 25°C
Derate above 25°C PD75
0.6
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -55 to +150 °C
Figure - 1 Power Derating
MJE2955T, 3055T
Complementary Power Transistors
Page 3 31/05/05 V1.0
Parameter Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC= 200mA, IB= 0) VCEO(sus) 60 -V
Collector Cut off Current
(VCE = 30V, IB= 0) ICEO -0.7
mA
Collector Cut off Current
(VCE = 70V, VBE(off) = 1.5V)
(VCE = 70V, VBE(off) = 1.5V, TC= 150°C)
ICEX - 1.0
5.0
Collector Cut off Current
(VCB = 70V, IE= 0)
(VCB = 70V, IE= 0, TC= 150°C)
ICBO -1.0
10
Emitter Cut off Current
(VEB = 5.0V, IC= 0) IEBO -5.0
Electrical Characteristics (TC = 25°C unless otherwise noted)
DC Current Gain
(IC= 4.0A, VCE = 4.0V)
(IC= 10A, VCE = 4.0V)
hFE 20
5.0 100 -
Collector-Emitter Saturation Voltage
(IC= 4.0A, IB= 0.4A)
(IC= 10A, IB= 3.3A)
VCE(sat) -1.1
8.0
V
Base-Emitter On Voltage
(IC= 4.0A, VCE = 4.0V) VBE(on) -1.8
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(IC= 500mA, VCE = 10V, f = 500KHz) fT2.0 -MHz
On Characteristics (1)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
(2) fT= hfe •ftest.
MJE2955T, 3055T
Complementary Power Transistors
Page 4 31/05/05 V1.0
Figure - 2 “ON” Voltage
MJE3055T
MJE2955T
Figure - 3 Active-Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown safe operating area curves indicate IC-VCE limits of
the transistor that must be observed for reliable operation i.e.,
the transistor must not be subjected to greater dissipation than
the curves indicate.
The data of Figure - 3 is based on TJ(PK) = 150°C; TCis
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(PK) ≤150°C.
At high case temperatures, thermal limitation will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
MJE2955T, 3055T
Complementary Power Transistors
Page 5 31/05/05 V1.0
IC(av)
maximum
(A)
VCEO
maximum
(V)
hFE
minimum
at IC= 4A
Ptot
at 25°C
(W)
Type Part Number
10 60 20 75
NPN MJE3055T
PNP MJE2955T
Figure - 4 DC Current Gain
Specifications
For enquiries from all other markets
MJE2955T, 3055T
Complementary Power Transistors
Page 6 31/05/05 V1.0
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